Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC032N03SG

BSC032N03SG

MOSFET N-CH 30V 23A/100A TDSON

Infineon Technologies
2,894 -

RFQ

BSC032N03SG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 100A (Tc) 4.5V, 10V 3.2mOhm @ 50A, 10V 2V @ 70µA 39 nC @ 5 V ±20V 5080 pF @ 15 V - 2.8W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB100N06S3L-03

IPB100N06S3L-03

MOSFET N-CH 55V 100A TO263-3-2

Infineon Technologies
3,248 -

RFQ

IPB100N06S3L-03

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 5V, 10V 2.7mOhm @ 80A, 10V 2.2V @ 230µA 550 nC @ 10 V ±16V 26240 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD5N03LAG

IPD5N03LAG

MOSFET N-CH 25V 50A TO252-3

Infineon Technologies
3,556 -

RFQ

IPD5N03LAG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.2mOhm @ 50A, 10V 2V @ 35µA 22 nC @ 5 V ±20V 2653 pF @ 15 V - - -55°C ~ 175°C (TJ) Surface Mount
BSC061N08NS5ATMA1

BSC061N08NS5ATMA1

MOSFET N-CH 80V 82A TDSON

Infineon Technologies
19,995 -

RFQ

BSC061N08NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 82A (Tc) 6V, 10V 6.1mOhm @ 41A, 10V 3.8V @ 41µA 33 nC @ 10 V ±20V 2500 pF @ 40 V - 2.5W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC900N20NS3GATMA1

BSC900N20NS3GATMA1

MOSFET N-CH 200V 15.2A TDSON-8

Infineon Technologies
2,830 -

RFQ

BSC900N20NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 15.2A (Tc) 10V 90mOhm @ 7.6A, 10V 4V @ 30µA 11.6 nC @ 10 V ±20V 920 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ900N20NS3GATMA1

BSZ900N20NS3GATMA1

MOSFET N-CH 200V 15.2A 8TSDSON

Infineon Technologies
3,154 -

RFQ

BSZ900N20NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 15.2A (Tc) 10V 90mOhm @ 7.6A, 10V 4V @ 30µA 11.6 nC @ 10 V ±20V 920 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC057N08NS3GATMA1

BSC057N08NS3GATMA1

MOSFET N-CH 80V 16A/100A TDSON

Infineon Technologies
2,869 -

RFQ

BSC057N08NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 16A (Ta), 100A (Tc) 6V, 10V 5.7mOhm @ 50A, 10V 3.5V @ 73µA 56 nC @ 10 V ±20V 3900 pF @ 40 V - 2.5W (Ta), 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ018NE2LSIATMA1

BSZ018NE2LSIATMA1

MOSFET N-CH 25V 22A/40A TSDSON

Infineon Technologies
3,519 -

RFQ

BSZ018NE2LSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 22A (Ta), 40A (Tc) 4.5V, 10V 1.8mOhm @ 20A, 10V 2V @ 250µA 36 nC @ 10 V ±20V 2500 pF @ 12 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ44ZSTRRPBF

IRFZ44ZSTRRPBF

MOSFET N-CH 55V 51A D2PAK

Infineon Technologies
3,758 -

RFQ

IRFZ44ZSTRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ013NE2LS5IATMA1

BSZ013NE2LS5IATMA1

MOSFET N-CH 25V 32A/40A TSDSON

Infineon Technologies
2,381 -

RFQ

BSZ013NE2LS5IATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 40A (Tc) 4.5V, 10V 1.3mOhm @ 20A, 10V 2V @ 250µA 50 nC @ 10 V ±16V 3400 pF @ 12 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH7084TRPBF

IRFH7084TRPBF

MOSFET N-CH 40V 100A 8PQFN

Infineon Technologies
3,038 -

RFQ

IRFH7084TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 1.25mOhm @ 100A, 10V 3.9V @ 150µA 190 nC @ 10 V ±20V 6560 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC009NE2LS5ATMA1

BSC009NE2LS5ATMA1

MOSFET N-CH 25V 41A/100A TDSON

Infineon Technologies
3,931 -

RFQ

BSC009NE2LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 41A (Ta), 100A (Tc) 4.5V, 10V 0.9mOhm @ 30A, 10V 2V @ 250µA 57 nC @ 10 V ±16V 3900 pF @ 12 V - 2.5W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC0500NSIATMA1

BSC0500NSIATMA1

MOSFET N-CH 30V 35A/100A TDSON

Infineon Technologies
3,140 -

RFQ

BSC0500NSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta), 100A (Tc) 4.5V, 10V 1.3mOhm @ 30A, 10V 2V @ 250µA 52 nC @ 10 V ±20V 3300 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ16DN25NS3GATMA1

BSZ16DN25NS3GATMA1

MOSFET N-CH 250V 10.9A 8TSDSON

Infineon Technologies
2,738 -

RFQ

BSZ16DN25NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 10.9A (Tc) 10V 165mOhm @ 5.5A, 10V 4V @ 32µA 11.4 nC @ 10 V ±20V 920 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPD06N80C3ATMA1

SPD06N80C3ATMA1

MOSFET N-CH 800V 6A TO252-3

Infineon Technologies
2,920 -

RFQ

SPD06N80C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Ta) 10V 900mOhm @ 3.8A, 10V 3.9V @ 250µA 41 nC @ 10 V ±20V 785 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC500N20NS3GATMA1

BSC500N20NS3GATMA1

MOSFET N-CH 200V 24A TDSON-8

Infineon Technologies
3,159 -

RFQ

BSC500N20NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 50mOhm @ 22A, 10V 4V @ 60µA 15 nC @ 10 V ±20V 1580 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB029N06N3GATMA1

IPB029N06N3GATMA1

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies
3,577 -

RFQ

IPB029N06N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.9mOhm @ 100A, 10V 4V @ 118µA 165 nC @ 10 V ±20V 13000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD15P10PLGBTMA1

SPD15P10PLGBTMA1

MOSFET P-CH 100V 15A TO252-3

Infineon Technologies
3,908 -

RFQ

SPD15P10PLGBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4.5V, 10V 200mOhm @ 11.3A, 10V 2V @ 1.54mA 62 nC @ 10 V ±20V 1490 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD082N10N3GATMA1

IPD082N10N3GATMA1

MOSFET N-CH 100V 80A TO252-3

Infineon Technologies
2,810 -

RFQ

IPD082N10N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 8.2mOhm @ 73A, 10V 3.5V @ 75µA 55 nC @ 10 V ±20V 3980 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISC060N10NM6ATMA1

ISC060N10NM6ATMA1

TRENCH >=100V PG-TDSON-8

Infineon Technologies
2,326 -

RFQ

ISC060N10NM6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Ta), 97A (Tc) 8V, 10V 6mOhm @ 25A, 10V 3.3V @ 50µA 33 nC @ 10 V ±20V 2500 pF @ 50 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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