Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR7833PBF

IRLR7833PBF

MOSFET N-CH 30V 140A DPAK

Infineon Technologies
2,158 -

RFQ

IRLR7833PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR7833TRRPBF

IRLR7833TRRPBF

MOSFET N-CH 30V 140A DPAK

Infineon Technologies
2,113 -

RFQ

IRLR7833TRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR7843PBF

IRLR7843PBF

MOSFET N-CH 30V 161A DPAK

Infineon Technologies
2,092 -

RFQ

IRLR7843PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 161A (Tc) 4.5V, 10V 3.3mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4380 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8103VPBF

IRLR8103VPBF

MOSFET N-CH 30V 91A DPAK

Infineon Technologies
2,117 -

RFQ

IRLR8103VPBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 91A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 27 nC @ 5 V ±20V 2672 pF @ 16 V - 115W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR8103VTRRPBF

IRLR8103VTRRPBF

MOSFET N-CH 30V 91A DPAK

Infineon Technologies
2,313 -

RFQ

IRLR8103VTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 91A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 27 nC @ 5 V ±20V 2672 pF @ 16 V - 115W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR8113PBF

IRLR8113PBF

MOSFET N-CH 30V 94A DPAK

Infineon Technologies
3,212 -

RFQ

IRLR8113PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 94A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.25V @ 250µA 32 nC @ 4.5 V ±20V 2920 pF @ 15 V - 89W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8503PBF

IRLR8503PBF

MOSFET N-CH 30V 44A DPAK

Infineon Technologies
3,121 -

RFQ

IRLR8503PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1650 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR8503TRRPBF

IRLR8503TRRPBF

MOSFET N-CH 30V 44A DPAK

Infineon Technologies
3,968 -

RFQ

IRLR8503TRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1650 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ44NSTRRPBF

IRLZ44NSTRRPBF

MOSFET N-CH 55V 47A D2PAK

Infineon Technologies
2,476 -

RFQ

IRLZ44NSTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 47A (Tc) 4V, 10V 22mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4410DYPBF

SI4410DYPBF

MOSFET N-CH 30V 10A 8SO

Infineon Technologies
2,479 -

RFQ

SI4410DYPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 13.5mOhm @ 10A, 10V 1V @ 250µA 45 nC @ 10 V ±20V 1585 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4420DYPBF

SI4420DYPBF

MOSFET N-CH 30V 12.5A 8SO

Infineon Technologies
2,965 -

RFQ

SI4420DYPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 9mOhm @ 12.5A, 10V 1V @ 250µA 78 nC @ 10 V ±20V 2240 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4435DYPBF

SI4435DYPBF

MOSFET P-CH 30V 8A 8SO

Infineon Technologies
3,389 -

RFQ

SI4435DYPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 20mOhm @ 8A, 10V 1V @ 250µA 60 nC @ 10 V ±20V 2320 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF6648TR1

IRF6648TR1

MOSFET N-CH 60V 86A DIRECTFET MN

Infineon Technologies
2,048 -

RFQ

IRF6648TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 86A (Tc) 10V 7mOhm @ 17A, 10V 4.9V @ 150µA 50 nC @ 10 V ±20V 2120 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF5305STRLPBF

IRF5305STRLPBF

MOSFET P-CH 55V 31A D2PAK

Infineon Technologies
135 -

RFQ

IRF5305STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 60mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC039N06NSATMA1

BSC039N06NSATMA1

MOSFET N-CH 60V 19A/100A TDSON

Infineon Technologies
2,464 -

RFQ

BSC039N06NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 19A (Ta), 100A (Tc) 6V, 10V 3.9mOhm @ 50A, 10V 2.8V @ 36µA 27 nC @ 10 V ±20V 2000 pF @ 30 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC011N03LSIATMA1

BSC011N03LSIATMA1

MOSFET N-CH 30V 37A/100A TDSON

Infineon Technologies
3,442 -

RFQ

BSC011N03LSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 37A (Ta), 100A (Tc) 4.5V, 10V 1.1mOhm @ 30A, 10V 2V @ 250µA 68 nC @ 10 V ±20V 4300 pF @ 15 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC360N15NS3GATMA1

BSC360N15NS3GATMA1

MOSFET N-CH 150V 33A 8TDSON

Infineon Technologies
3,197 -

RFQ

BSC360N15NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 8V, 10V 36mOhm @ 25A, 10V 4V @ 45µA 15 nC @ 10 V ±20V 1190 pF @ 75 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR3110ZTRPBF

IRLR3110ZTRPBF

MOSFET N-CH 100V 42A DPAK

Infineon Technologies
3,812 -

RFQ

IRLR3110ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC123N10LSGATMA1

BSC123N10LSGATMA1

MOSFET N-CH 100V 10.6/71A 8TDSON

Infineon Technologies
3,676 -

RFQ

BSC123N10LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 10.6A (Ta), 71A (Tc) 4.5V, 10V 12.3mOhm @ 50A, 10V 2.4V @ 72µA 68 nC @ 10 V ±20V 4900 pF @ 50 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC022N03SG

BSC022N03SG

MOSFET N-CH 30V 28A/100A TDSON

Infineon Technologies
3,741 -

RFQ

BSC022N03SG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 100A (Tc) 4.5V, 10V 2.2mOhm @ 50A, 10V 2V @ 110µA 64 nC @ 5 V ±20V 8290 pF @ 15 V - 2.8W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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