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Transistores - FETs, MOSFETs - Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSC160N15NS5ATMA1MOSFET N-CH 150V 56A TDSON Infineon Technologies |
3,855 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 56A (Tc) | 8V, 10V | 16mOhm @ 28A, 10V | 4.6V @ 60µA | 23.1 nC @ 10 V | ±20V | 1820 pF @ 75 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF4905STRRPBFMOSFET P-CH 55V 42A D2PAK Infineon Technologies |
2,883 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IAUC100N10S5N040ATMA1MOSFET N-CH 100V 100A 8TDSON-34 Infineon Technologies |
2,849 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™-5 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 4mOhm @ 50A, 10V | 3.8V @ 90µA | 78 nC @ 10 V | ±20V | 5200 pF @ 50 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRLH5030TRPBFMOSFET N-CH 100V 13A/100A 8PQFN Infineon Technologies |
3,441 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Ta), 100A (Tc) | 4.5V, 10V | 9mOhm @ 50A, 10V | 2.5V @ 150µA | 94 nC @ 10 V | ±16V | 5185 pF @ 50 V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
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IPB70N10S3L12ATMA1MOSFET N-CH 100V 70A TO263-3 Infineon Technologies |
2,410 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 11.8mOhm @ 70A, 10V | 2.4V @ 83µA | 80 nC @ 10 V | ±20V | 5550 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
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IRF4905STRLPBFMOSFET P-CH 55V 42A D2PAK Infineon Technologies |
3,728 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
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IPB042N10N3GATMA1MOSFET N-CH 100V 100A D2PAK Infineon Technologies |
2,989 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 4.2mOhm @ 50A, 10V | 3.5V @ 150µA | 117 nC @ 10 V | ±20V | 8410 pF @ 50 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPD200N15N3GATMA1MOSFET N-CH 150V 50A TO252-3 Infineon Technologies |
3,327 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 50A (Tc) | 8V, 10V | 20mOhm @ 50A, 10V | 4V @ 90µA | 31 nC @ 10 V | ±20V | 1820 pF @ 75 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
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BSC093N04LSGATMA1MOSFET N-CH 40V 13A/49A TDSON Infineon Technologies |
2,859 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 13A (Ta), 49A (Tc) | 4.5V, 10V | 9.3mOhm @ 40A, 10V | 2V @ 14µA | 24 nC @ 10 V | ±20V | 1900 pF @ 20 V | - | 2.5W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSZ100N06NSATMA1MOSFET N-CH 60V 40A TSDSON Infineon Technologies |
2,312 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Tc) | 6V, 10V | 10mOhm @ 20A, 10V | 3.3V @ 14µA | 15 nC @ 10 V | ±20V | 1075 pF @ 30 V | - | 2.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
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IPB60R180P7ATMA1MOSFET N-CH 600V 18A D2PAK Infineon Technologies |
3,989 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25 nC @ 10 V | ±20V | 1081 pF @ 400 V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSC077N12NS3GATMA1MOSFET N-CH 120V 13.4/98A 8TDSON Infineon Technologies |
3,599 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 13.4A (Ta), 98A (Tc) | 10V | 7.7mOhm @ 50A, 10V | 4V @ 110µA | 88 nC @ 10 V | ±20V | 5700 pF @ 60 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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BSC028N06LS3GATMA1MOSFET N-CH 60V 23A/100A TDSON Infineon Technologies |
2,719 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 23A (Ta), 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2.2V @ 93µA | 175 nC @ 10 V | ±20V | 13000 pF @ 30 V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRFS3306TRLPBFMOSFET N-CH 60V 120A D2PAK Infineon Technologies |
3,270 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4520 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
BSC050N10NS5ATMA1MOSFET N-CH 100V 16A/100A TDSON Infineon Technologies |
2,824 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Ta), 100A (Tc) | 6V, 10V | 5mOhm @ 50A, 10V | 3.8V @ 72µA | 61 nC @ 10 V | ±20V | 4300 pF @ 50 V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
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BSC190N15NS3GATMA1MOSFET N-CH 150V 50A TDSON-8-1 Infineon Technologies |
2,586 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 50A (Tc) | 8V, 10V | 19mOhm @ 50A, 10V | 4V @ 90µA | 31 nC @ 10 V | ±20V | 2420 pF @ 75 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRL2505STRLPBFMOSFET N-CH 55V 104A D2PAK Infineon Technologies |
2,457 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | 2V @ 250µA | 130 nC @ 5 V | ±16V | 5000 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
BSC047N08NS3GATMA1MOSFET N-CH 80V 18A/100A TDSON Infineon Technologies |
2,526 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 18A (Ta), 100A (Tc) | 6V, 10V | 4.7mOhm @ 50A, 10V | 3.5V @ 90µA | 69 nC @ 10 V | ±20V | 4800 pF @ 40 V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
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IPB600N25N3GATMA1MOSFET N-CH 250V 25A D2PAK Infineon Technologies |
2,724 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 25A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 90µA | 29 nC @ 10 V | ±20V | 2350 pF @ 100 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
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IPD320N20N3GATMA1MOSFET N-CH 200V 34A TO252-3 Infineon Technologies |
3,348 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 34A (Tc) | 10V | 32mOhm @ 34A, 10V | 4V @ 90µA | 29 nC @ 10 V | ±20V | 2350 pF @ 100 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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