Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSZ0702LSATMA1

BSZ0702LSATMA1

MOSFET N-CH 60V 17A/40A TSDSON

Infineon Technologies
3,711 -

RFQ

BSZ0702LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 40A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.3V @ 36µA 22 nC @ 4.5 V ±20V 3100 pF @ 30 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6674TRPBF

IRF6674TRPBF

MOSFET N-CH 60V 13.4A DIRECTFET

Infineon Technologies
3,429 -

RFQ

IRF6674TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 13.4A (Ta), 67A (Tc) 10V 11mOhm @ 13.4A, 10V 4.9V @ 100µA 36 nC @ 10 V ±20V 1350 pF @ 25 V - 3.6W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFS3307ZTRLPBF

IRFS3307ZTRLPBF

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies
3,605 -

RFQ

IRFS3307ZTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 5.8mOhm @ 75A, 10V 4V @ 150µA 110 nC @ 10 V ±20V 4750 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLB3813PBF

IRLB3813PBF

MOSFET N-CH 30V 260A TO220AB

Infineon Technologies
3,234 -

RFQ

IRLB3813PBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 260A (Tc) 4.5V, 10V 1.95mOhm @ 60A, 10V 2.35V @ 150µA 86 nC @ 4.5 V ±20V 8420 pF @ 15 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC042N03ST

BSC042N03ST

MOSFET N-CH 30V 20A/50A TDSON

Infineon Technologies
3,182 -

RFQ

BSC042N03ST

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 50A (Tc) 4.5V, 10V 4.2mOhm @ 50A, 10V 2V @ 50µA 28 nC @ 5 V ±20V 3660 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
BSC059N03ST

BSC059N03ST

MOSFET N-CH 30V 19A/89A TDSON

Infineon Technologies
3,008 -

RFQ

BSC059N03ST

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 89A (Tc) 4.5V, 10V 5.5mOhm @ 50A, 10V 2V @ 35µA 21 nC @ 5 V ±20V 2670 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
BSC035N10NS5ATMA1

BSC035N10NS5ATMA1

MOSFET N-CH 100V 100A TDSON

Infineon Technologies
2,059 -

RFQ

BSC035N10NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3.5mOhm @ 50A, 10V 3.8V @ 115µA 87 nC @ 10 V ±20V 6500 pF @ 50 V - 2.5W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB011N04NGATMA1

IPB011N04NGATMA1

MOSFET N-CH 40V 180A TO263-7

Infineon Technologies
2,734 -

RFQ

IPB011N04NGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 1.1mOhm @ 100A, 10V 4V @ 200µA 250 nC @ 10 V ±20V 20000 pF @ 20 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA086N10N3GXKSA1

IPA086N10N3GXKSA1

MOSFET N-CH 100V 45A TO220-FP

Infineon Technologies
3,642 -

RFQ

IPA086N10N3GXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 45A (Tc) 6V, 10V 8.6mOhm @ 45A, 10V 3.5V @ 75µA 55 nC @ 10 V ±20V 3980 pF @ 50 V - 37.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF7648M2TR

AUIRF7648M2TR

MOSFET N-CH 60V 14A DIRECTFET

Infineon Technologies
2,010 -

RFQ

AUIRF7648M2TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Ta), 68A (Tc) 10V 7mOhm @ 41A, 10V 4.9V @ 150µA 53 nC @ 10 V ±20V 2170 pF @ 25 V - 2.5W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUT150N10S5N035ATMA1

IAUT150N10S5N035ATMA1

MOSFET N-CH 100V 150A 8HSOF

Infineon Technologies
2,123 -

RFQ

IAUT150N10S5N035ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 6V, 10V 3.5mOhm @ 75A, 10V 3.8V @ 110µA 87 nC @ 10 V ±20V 6110 pF @ 50 V - 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4227TRLPBF

IRFS4227TRLPBF

MOSFET N-CH 200V 62A D2PAK

Infineon Technologies
2,881 -

RFQ

IRFS4227TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 62A (Tc) 10V 26mOhm @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 4600 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Surface Mount
BSC600N25NS3GATMA1

BSC600N25NS3GATMA1

MOSFET N-CH 250V 25A TDSON-8-1

Infineon Technologies
2,965 -

RFQ

BSC600N25NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 25A (Tc) 10V 60mOhm @ 25A, 10V 4V @ 90µA 29 nC @ 10 V ±20V 2350 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC014N06NSATMA1

BSC014N06NSATMA1

MOSFET N-CH 60V 30A/100A TDSON7

Infineon Technologies
2,307 -

RFQ

BSC014N06NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Ta), 100A (Tc) 6V, 10V 1.45mOhm @ 50A, 10V 2.8V @ 120µA 89 nC @ 10 V ±20V 6500 pF @ 30 V - 2.5W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB120P04P404ATMA2

IPB120P04P404ATMA2

MOSFET P-CH 40V 120A TO263-3

Infineon Technologies
2,643 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) - 3.8mOhm @ 100A, 10V 4V @ 340µA 205 nC @ 10 V ±20V 14790 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4310ZTRLPBF

IRFS4310ZTRLPBF

MOSFET N-CH 100V 120A D2PAK

Infineon Technologies
2,792 -

RFQ

IRFS4310ZTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB017N06N3GATMA1

IPB017N06N3GATMA1

MOSFET N-CH 60V 180A TO263-7

Infineon Technologies
3,360 -

RFQ

IPB017N06N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 180A (Tc) 10V 1.7mOhm @ 100A, 10V 4V @ 196µA 275 nC @ 10 V ±20V 23000 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2807ZPBF

IRF2807ZPBF

MOSFET N-CH 75V 75A TO220AB

Infineon Technologies
2,423 -

RFQ

IRF2807ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLS3034TRLPBF

IRLS3034TRLPBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
2,389 -

RFQ

IRLS3034TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.7mOhm @ 195A, 10V 2.5V @ 250µA 162 nC @ 4.5 V ±20V 10315 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ123N08NS3GATMA1

BSZ123N08NS3GATMA1

MOSFET N-CH 80V 10A/40A 8TSDSON

Infineon Technologies
3,722 -

RFQ

BSZ123N08NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 10A (Ta), 40A (Tc) 6V, 10V 12.3mOhm @ 20A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1700 pF @ 40 V - 2.1W (Ta), 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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