Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7759L2TRPBF

IRF7759L2TRPBF

MOSFET N-CH 75V 26A DIRECTFET

Infineon Technologies
3,299 -

RFQ

IRF7759L2TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 26A (Ta), 375A (Tc) 10V 2.3mOhm @ 96A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 12222 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7779L2TRPBF

IRF7779L2TRPBF

MOSFET N-CH 150V 375A DIRECTFET

Infineon Technologies
3,629 -

RFQ

IRF7779L2TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 67A (Tc) 10V 11mOhm @ 40A, 10V 5V @ 250µA 150 nC @ 10 V ±20V 6660 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R190C6XKSA1

IPP60R190C6XKSA1

MOSFET N-CH 600V 20.2A TO220-3

Infineon Technologies
2,249 -

RFQ

IPP60R190C6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB027N10N3GATMA1

IPB027N10N3GATMA1

MOSFET N-CH 100V 120A D2PAK

Infineon Technologies
2,355 -

RFQ

IPB027N10N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 2.7mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUT300N10S5N015ATMA1

IAUT300N10S5N015ATMA1

MOSFET N-CH 100V 300A 8HSOF

Infineon Technologies
3,029 -

RFQ

IAUT300N10S5N015ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) 6V, 10V 1.5mOhm @ 100A, 10V 3.8V @ 275µA 216 nC @ 10 V ±20V 16011 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUS260N10S5N019TATMA1

IAUS260N10S5N019TATMA1

MOSFET N-CH 100V 260A HDSOP-16-2

Infineon Technologies
2,080 -

RFQ

IAUS260N10S5N019TATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 260A (Tj) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 210µA 166 nC @ 10 V ±20V 11830 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUS300N08S5N012ATMA1

IAUS300N08S5N012ATMA1

MOSFET N-CH 80V 300A HSOG-8

Infineon Technologies
2,328 -

RFQ

IAUS300N08S5N012ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 300A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.8V @ 275µA 231 nC @ 10 V ±20V 16250 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB072N15N3GATMA1

IPB072N15N3GATMA1

MOSFET N-CH 150V 100A TO263-3

Infineon Technologies
7,069 -

RFQ

IPB072N15N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 8V, 10V 7.2mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 5470 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF100S201

IRF100S201

MOSFET N-CH 100V 192A D2PAK

Infineon Technologies
2,861 -

RFQ

IRF100S201

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 192A (Tc) 10V 4.2mOhm @ 115A, 10V 4V @ 250µA 255 nC @ 10 V ±20V 9500 pF @ 50 V - 441W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB019N08N3GATMA1

IPB019N08N3GATMA1

MOSFET N-CH 80V 180A TO263-7

Infineon Technologies
2,162 -

RFQ

IPB019N08N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.5V @ 270µA 206 nC @ 10 V ±20V 14200 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT012N08N5ATMA1

IPT012N08N5ATMA1

MOSFET N-CH 80V 300A 8HSOF

Infineon Technologies
3,174 -

RFQ

IPT012N08N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 300A (Tc) 6V, 10V 1.2mOhm @ 150A, 10V 3.8V @ 280µA 223 nC @ 10 V ±20V 17000 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPLU300N04S4R8XTMA1

IPLU300N04S4R8XTMA1

MOSFET N-CH 40V 300A 8HSOF

Infineon Technologies
3,591 -

RFQ

IPLU300N04S4R8XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 0.77mOhm @ 100A, 10V 4V @ 230µA 287 nC @ 10 V ±20V 22945 pF @ 25 V - 429W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPL60R075CFD7AUMA1

IPL60R075CFD7AUMA1

MOSFET N-CH 650V 33A 4VSON

Infineon Technologies
2,268 -

RFQ

IPL60R075CFD7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 75mOhm @ 15.1A, 10V 4.5V @ 760µA 67 nC @ 10 V ±20V 2721 pF @ 400 V - 189W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRF5210STRL

AUIRF5210STRL

MOSFET P-CH 100V 38A D2PAK

Infineon Technologies
2,569 -

RFQ

AUIRF5210STRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 60mOhm @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 2780 pF @ 25 V - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB025N10N3GATMA1

IPB025N10N3GATMA1

MOSFET N-CH 100V 180A TO263-7

Infineon Technologies
2,041 -

RFQ

IPB025N10N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB65R110CFDATMA1

IPB65R110CFDATMA1

MOSFET N-CH 650V 31.2A D2PAK

Infineon Technologies
2,496 -

RFQ

IPB65R110CFDATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB020N10N5ATMA1

IPB020N10N5ATMA1

MOSFET N-CH 100V 120A D2PAK

Infineon Technologies
2,409 -

RFQ

IPB020N10N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.8V @ 270µA 210 nC @ 10 V ±20V 15600 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC034N10LS5ATMA1

BSC034N10LS5ATMA1

MOSFET N-CH 100V 19A/100A TDSON

Infineon Technologies
3,156 -

RFQ

BSC034N10LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Ta), 100A (Tc) 4.5V, 10V 3.4mOhm @ 50A, 10V 2.3V @ 115µA 46 nC @ 4.5 V ±20V 6500 pF @ 50 V - 2.5W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB015N08N5ATMA1

IPB015N08N5ATMA1

MOSFET N-CH 80V 180A TO263-7

Infineon Technologies
3,305 -

RFQ

IPB015N08N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tc) 6V, 10V 1.5mOhm @ 100A, 10V 3.8V @ 279µA 222 nC @ 10 V ±20V 16900 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUS300N08S5N011TATMA1

IAUS300N08S5N011TATMA1

MOSFET N-CH 80V 300A HDSOP-16-2

Infineon Technologies
2,861 -

RFQ

IAUS300N08S5N011TATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 300A (Tj) 6V, 10V 1.1mOhm @ 100A, 10V 3.8V @ 275µA 231 nC @ 10 V ±20V 16250 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 8399 Record«Prev1... 8990919293949596...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário