Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB017N10N5LFATMA1

IPB017N10N5LFATMA1

MOSFET N-CH 100V 180A TO263-7

Infineon Technologies
3,695 -

RFQ

IPB017N10N5LFATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 1.7mOhm @ 100A, 10V 4.1V @ 270µA 195 nC @ 10 V ±20V 840 pF @ 50 V - 313W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB110N20N3LFATMA1

IPB110N20N3LFATMA1

MOSFET N-CH 200V 88A TO263-3

Infineon Technologies
2,525 -

RFQ

IPB110N20N3LFATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 3 Active N-Channel MOSFET (Metal Oxide) 200 V 88A (Tc) 10V 11mOhm @ 88A, 10V 4.2V @ 260µA 76 nC @ 10 V ±20V 650 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB107N20NAATMA1

IPB107N20NAATMA1

MOSFET N-CH 200V 88A D2PAK

Infineon Technologies
2,948 -

RFQ

IPB107N20NAATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 88A (Tc) 10V 10.7mOhm @ 88A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7100 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB048N15N5LFATMA1

IPB048N15N5LFATMA1

MOSFET N-CH 150V 120A D2PAK

Infineon Technologies
2,359 -

RFQ

IPB048N15N5LFATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 10V 4.8mOhm @ 100A, 10V 4.9V @ 255µA 84 nC @ 10 V ±20V 380 pF @ 75 V - 313W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPL65R070C7AUMA1

IPL65R070C7AUMA1

MOSFET N-CH 650V 28A 4VSON

Infineon Technologies
2,821 -

RFQ

IPL65R070C7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 70mOhm @ 8.5A, 10V 4V @ 850µA 64 nC @ 10 V ±20V 3020 pF @ 100 V - 169W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRF7769L2TR

AUIRF7769L2TR

MOSFET N-CH 100V 375A DIRECTFET

Infineon Technologies
3,559 -

RFQ

AUIRF7769L2TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 375A (Tc) 10V 3.5mOhm @ 74A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 11560 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8409-7P

AUIRFS8409-7P

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
2,962 -

RFQ

AUIRFS8409-7P

Ficha técnica

Bulk,Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 0.75mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R125CPXKSA1

IPP60R125CPXKSA1

MOSFET N-CH 650V 25A TO220-3

Infineon Technologies
2,774 -

RFQ

IPP60R125CPXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 125mOhm @ 16A, 10V 3.5V @ 1.1mA 70 nC @ 10 V ±20V 2500 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP220N25NFDAKSA1

IPP220N25NFDAKSA1

MOSFET N-CH 250V 61A TO220-3

Infineon Technologies
2,875 -

RFQ

IPP220N25NFDAKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 61A (Tc) 10V 22mOhm @ 61A, 10V 4V @ 270µA 86 nC @ 10 V ±20V 7076 pF @ 125 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP4368PBF

IRFP4368PBF

MOSFET N-CH 75V 195A TO247AC

Infineon Technologies
3,642 -

RFQ

IRFP4368PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 10V 1.85mOhm @ 195A, 10V 4V @ 250µA 570 nC @ 10 V ±20V 19230 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP200N25N3GXKSA1

IPP200N25N3GXKSA1

MOSFET N-CH 250V 64A TO220-3

Infineon Technologies
2,437 -

RFQ

IPP200N25N3GXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 64A (Tc) 10V 20mOhm @ 64A, 10V 4V @ 270µA 86 nC @ 10 V ±20V 7100 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP4468PBF

IRFP4468PBF

MOSFET N-CH 100V 195A TO247AC

Infineon Technologies
2,516 -

RFQ

IRFP4468PBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 195A (Tc) 10V 2.6mOhm @ 180A, 10V 4V @ 250µA 540 nC @ 10 V ±20V 19860 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPBE65R050CFD7AATMA1

IPBE65R050CFD7AATMA1

MOSFET N-CH 650V 45A TO263-7

Infineon Technologies
3,815 -

RFQ

IPBE65R050CFD7AATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, CoolMOS™ CFD7A Active N-Channel MOSFET (Metal Oxide) 650 V 45A (Tc) 10V 50mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF200P222

IRF200P222

MOSFET N-CH 200V 182A TO247AC

Infineon Technologies
3,844 -

RFQ

IRF200P222

Ficha técnica

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 182A (Tc) 10V 6.6mOhm @ 82A, 10V 4V @ 270µA 203 nC @ 10 V ±20V 9820 pF @ 50 V - 556W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R080CFDFKSA1

IPW65R080CFDFKSA1

MOSFET N-CH 700V 43.3A TO247-3

Infineon Technologies
3,729 -

RFQ

IPW65R080CFDFKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 700 V 43.3A (Tc) 10V 80mOhm @ 17.6A, 10V 4.5V @ 1.76mA 170 nC @ 10 V ±20V 5030 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R080CFDAFKSA1

IPW65R080CFDAFKSA1

MOSFET N-CH 650V 43.3A TO247-3

Infineon Technologies
3,697 -

RFQ

IPW65R080CFDAFKSA1

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 43.3A (Tc) 10V 80mOhm @ 17.6A, 10V 4.5V @ 1.76mA 161 nC @ 10 V ±20V 4440 pF @ 100 V - 391W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPT60R028G7XTMA1

IPT60R028G7XTMA1

MOSFET N-CH 600V 75A 8HSOF

Infineon Technologies
2,842 -

RFQ

IPT60R028G7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 600 V 75A (Tc) 10V 28mOhm @ 28.8A, 10V 4V @ 1.44mA 123 nC @ 10 V ±20V 4820 pF @ 400 V - 391W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP65R045C7XKSA1

IPP65R045C7XKSA1

MOSFET N-CH 650V 46A TO220-3

Infineon Technologies
3,988 -

RFQ

IPP65R045C7XKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPZ60R040C7XKSA1

IPZ60R040C7XKSA1

MOSFET N-CH 600V 50A TO247-4

Infineon Technologies
3,504 -

RFQ

IPZ60R040C7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 40mOhm @ 24.9A, 10V 4V @ 1.24mA 107 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R041CFDFKSA1

IPW65R041CFDFKSA1

MOSFET N-CH 650V 68.5A TO247-3

Infineon Technologies
2,731 -

RFQ

IPW65R041CFDFKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 68.5A (Tc) 10V 41mOhm @ 33.1A, 10V 4.5V @ 3.3mA 300 nC @ 10 V ±20V 8400 pF @ 100 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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