Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP60R040C7XKSA1

IPP60R040C7XKSA1

MOSFET N-CH 600V 50A TO220-3

Infineon Technologies
3,827 -

RFQ

IPP60R040C7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 40mOhm @ 24.9A, 10V 4V @ 1.24mA 107 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW55N80C3FKSA1

SPW55N80C3FKSA1

MOSFET N-CH 800V 54.9A TO247-3

Infineon Technologies
2,489 -

RFQ

SPW55N80C3FKSA1

Ficha técnica

Tube CoolMOS™ C3 Active N-Channel MOSFET (Metal Oxide) 800 V 54.9A (Tc) 10V 85mOhm @ 32.6A, 10V 3.9V @ 3.3mA 288 nC @ 10 V ±20V 7520 pF @ 100 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
SN7002NH6433XTMA1

SN7002NH6433XTMA1

MOSFET N-CH 60V 200MA SOT23-3

Infineon Technologies
3,294 -

RFQ

SN7002NH6433XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS138NH6433XTMA1

BSS138NH6433XTMA1

MOSFET N-CH 60V 230MA SOT23-3

Infineon Technologies
3,401 -

RFQ

BSS138NH6433XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 230mA (Ta) 4.5V, 10V 3.5Ohm @ 230mA, 10V 1.4V @ 26µA 1.4 nC @ 10 V ±20V 41 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS138WH6433XTMA1

BSS138WH6433XTMA1

MOSFET N-CH 60V 280MA SOT323-3

Infineon Technologies
2,636 -

RFQ

BSS138WH6433XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk SIPMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 280mA (Ta) 4.5V, 10V 3.5Ohm @ 200mA, 10V 1.4V @ 26µA 1.5 nC @ 10 V ±20V 43 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS123NH6433XTMA1

BSS123NH6433XTMA1

MOSFET N-CH 100V 190MA SOT23-3

Infineon Technologies
2,812 -

RFQ

BSS123NH6433XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 190mA (Ta) 4.5V, 10V 6Ohm @ 190mA, 10V 1.8V @ 13µA 0.9 nC @ 10 V ±20V 20.9 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS209PWH6327XTSA1

BSS209PWH6327XTSA1

MOSFET P-CH 20V 630MA SOT323-3

Infineon Technologies
40,545 -

RFQ

BSS209PWH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 630mA (Tc) 2.5V, 4.5V 550mOhm @ 630mA, 4.5V 1.2V @ 3.5µA 1.3 nC @ 4.5 V ±12V 115 pF @ 15 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SN7002NH6327XTSA2

SN7002NH6327XTSA2

MOSFET N-CH 60V 200MA SOT23-3

Infineon Technologies
2,535 -

RFQ

SN7002NH6327XTSA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, SIPMOS® Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML2244TRPBF

IRLML2244TRPBF

MOSFET P-CH 20V 4.3A SOT23

Infineon Technologies
2,163 -

RFQ

IRLML2244TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 2.5V, 4.5V 54mOhm @ 4.3A, 4.5V 1.1V @ 10µA 6.9 nC @ 4.5 V ±12V 570 pF @ 16 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS139IXTSA1

BSS139IXTSA1

SMALL SIGNAL MOSFETS PG-SOT23-3

Infineon Technologies
2,729 -

RFQ

BSS139IXTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 100mA (Ta) 0V, 10V 14Ohm @ 100mA, 10V 1V @ 56µA 2.3 nC @ 5 V ±20V 60 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML6402TRPBF

IRLML6402TRPBF

MOSFET P-CH 20V 3.7A SOT23

Infineon Technologies
2,599 -

RFQ

IRLML6402TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.7A (Ta) 2.5V, 4.5V 65mOhm @ 3.7A, 4.5V 1.2V @ 250µA 12 nC @ 5 V ±12V 633 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS126IXTSA1

BSS126IXTSA1

MOSFET N-CH 600V 21MA SOT23-3

Infineon Technologies
3,363 -

RFQ

BSS126IXTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 600 V 21mA (Ta) - 500Ohm @ 16mA, 10V 1.6V @ 8µA 1.4 nC @ 5 V ±20V 21 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSR92PH6327XTSA1

BSR92PH6327XTSA1

MOSFET P-CH 250V 140MA SC59

Infineon Technologies
2,942 -

RFQ

BSR92PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 250 V 140mA (Ta) 2.8V, 10V 11Ohm @ 140mA, 10V 2V @ 130µA 4.8 nC @ 10 V ±20V 109 pF @ 25 V - 500mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPN60R3K4CEATMA1

IPN60R3K4CEATMA1

MOSFET N-CH 600V 2.6A SOT223

Infineon Technologies
3,278 -

RFQ

IPN60R3K4CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 2.6A (Tc) 10V 3.4Ohm @ 500mA, 10V 3.5V @ 40µA 4.6 nC @ 10 V ±20V 93 pF @ 100 V Super Junction 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
ISC045N03L5SATMA1

ISC045N03L5SATMA1

MOSFET N-CH 30V 18A/63A TDSON

Infineon Technologies
2,579 -

RFQ

ISC045N03L5SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 63A (Tc) 4.5V, 10V 4.5mOhm @ 30A, 10V 2V @ 250µA 13 nC @ 10 V ±20V 870 pF @ 15 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPN50R2K0CEATMA1

IPN50R2K0CEATMA1

MOSFET N-CH 500V 3.6A SOT223

Infineon Technologies
3,832 -

RFQ

IPN50R2K0CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 3.6A (Tc) 13V 2Ohm @ 600mA, 13V 3.5V @ 50µA 6 nC @ 10 V ±20V 124 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFTS9342TRPBF

IRFTS9342TRPBF

MOSFET P-CH 30V 5.8A 6TSOP

Infineon Technologies
2,801 -

RFQ

IRFTS9342TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 4.5V, 10V 40mOhm @ 5.8A, 10V 2.4V @ 25µA 12 nC @ 10 V ±20V 595 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSR316PH6327XTSA1

BSR316PH6327XTSA1

MOSFET P-CH 100V 360MA SC59

Infineon Technologies
2,465 -

RFQ

BSR316PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 100 V 360mA (Ta) 4.5V, 10V 1.8Ohm @ 360mA, 10V 1V @ 170µA 7 nC @ 10 V ±20V 165 pF @ 25 V - 500mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPN60R2K1CEATMA1

IPN60R2K1CEATMA1

MOSFET N-CH 600V 3.7A SOT223

Infineon Technologies
3,442 -

RFQ

IPN60R2K1CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Tc) 10V 2.1Ohm @ 800mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V Super Junction 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSS606NH6327XTSA1

BSS606NH6327XTSA1

MOSFET N-CH 60V 3.2A SOT89

Infineon Technologies
2,581 -

RFQ

BSS606NH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 3.2A (Ta) 4.5V, 10V 60mOhm @ 3.2A, 10V 2.3V @ 15µA 5.6 nC @ 5 V ±20V 657 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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