Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR8726TRLPBF

IRLR8726TRLPBF

MOSFET N-CH 30V 86A DPAK

Infineon Technologies
3,162 -

RFQ

IRLR8726TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 86A (Tc) 4.5V, 10V 5.8mOhm @ 25A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V 2150 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL6342TRPBF

IRL6342TRPBF

MOSFET N-CH 30V 9.9A 8SO

Infineon Technologies
2,026 -

RFQ

IRL6342TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 9.9A (Ta) 2.5V, 4.5V 14.6mOhm @ 9.9A, 4.5V 1.1V @ 10µA 11 nC @ 4.5 V ±12V 1025 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS87H6327FTSA1

BSS87H6327FTSA1

MOSFET N-CH 240V 260MA SOT89-4

Infineon Technologies
3,035 -

RFQ

BSS87H6327FTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 240 V 260mA (Ta) 4.5V, 10V 6Ohm @ 260mA, 10V 1.8V @ 108µA 5.5 nC @ 10 V ±20V 97 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPN70R2K0P7SATMA1

IPN70R2K0P7SATMA1

MOSFET N-CH 700V 3A SOT223

Infineon Technologies
3,413 -

RFQ

IPN70R2K0P7SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 3A (Tc) 10V 2Ohm @ 500mA, 10V 3.5V @ 30µA 3.8 nC @ 10 V ±16V 130 pF @ 400 V - 6W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD60R2K1CEAUMA1

IPD60R2K1CEAUMA1

MOSFET N-CH 600V 2.3A TO252-3

Infineon Technologies
2,538 -

RFQ

IPD60R2K1CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 600 V 2.3A (Tc) 10V 2.1Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 38W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPN60R1K5CEATMA1

IPN60R1K5CEATMA1

MOSFET N-CH 600V 5A SOT223

Infineon Technologies
3,991 -

RFQ

IPN60R1K5CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 1.5Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSS192PH6327FTSA1

BSS192PH6327FTSA1

MOSFET P-CH 250V 190MA SOT89

Infineon Technologies
2,309 -

RFQ

BSS192PH6327FTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 250 V 190mA (Ta) 2.8V, 10V 12Ohm @ 190mA, 10V 2V @ 130µA 6.1 nC @ 10 V ±20V 104 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH3702TRPBF

IRFH3702TRPBF

MOSFET N-CH 30V 16A/42A 8PQFN

Infineon Technologies
2,931 -

RFQ

IRFH3702TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 42A (Tc) 4.5V, 10V 7.1mOhm @ 16A, 10V 2.35V @ 25µA 14 nC @ 4.5 V ±20V 1510 pF @ 15 V - 2.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISC037N03L5ISATMA1

ISC037N03L5ISATMA1

MOSFET N-CH 30V 20A/78A TDSON

Infineon Technologies
3,495 -

RFQ

ISC037N03L5ISATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 78A (Tc) 4.5V, 10V 3.7mOhm @ 30A, 10V 2V @ 250µA 17 nC @ 10 V ±20V 1100 pF @ 15 V - 2.5W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL024NTRPBF

IRFL024NTRPBF

MOSFET N-CH 55V 2.8A SOT223

Infineon Technologies
2,978 -

RFQ

IRFL024NTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V 4V @ 250µA 18.3 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFML8244TRPBF

IRFML8244TRPBF

MOSFET N-CH 25V 5.8A SOT23

Infineon Technologies
42,000 -

RFQ

IRFML8244TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 5.8A (Ta) 4.5V, 10V 24mOhm @ 5.8A, 10V 2.35V @ 10µA 5.4 nC @ 10 V ±20V 430 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISZ065N03L5SATMA1

ISZ065N03L5SATMA1

MOSFET N-CH 30V 12A/40A TSDSON

Infineon Technologies
3,570 -

RFQ

ISZ065N03L5SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 40A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V 2V @ 250µA 10 nC @ 10 V ±20V 670 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
IPN70R1K2P7SATMA1

IPN70R1K2P7SATMA1

MOSFET N-CH 700V 4.5A SOT223

Infineon Technologies
9,000 -

RFQ

IPN70R1K2P7SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 4.5A (Tc) 10V 1.2Ohm @ 900mA, 10V 3.5V @ 40µA 4.8 nC @ 10 V ±16V 174 pF @ 400 V - 6.3W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSS225H6327FTSA1

BSS225H6327FTSA1

MOSFET N-CH 600V 90MA SOT89

Infineon Technologies
2,707 -

RFQ

BSS225H6327FTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 600 V 90mA (Ta) 4.5V, 10V 45Ohm @ 90mA, 10V 2.3V @ 94µA 5.8 nC @ 10 V ±20V 131 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSL207SPH6327XTSA1

BSL207SPH6327XTSA1

MOSFET P-CH 20V 6A TSOP-6

Infineon Technologies
3,476 -

RFQ

BSL207SPH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 2.5V, 4.5V 41mOhm @ 6A, 4.5V 1.2V @ 40µA 20 nC @ 10 V ±12V 1007 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPN60R1K0CEATMA1

IPN60R1K0CEATMA1

MOSFET N-CH 600V 6.8A SOT223

Infineon Technologies
2,679 -

RFQ

IPN60R1K0CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSL307SPH6327XTSA1

BSL307SPH6327XTSA1

MOSFET P-CH 30V 5.5A 6TSOP

Infineon Technologies
2,752 -

RFQ

BSL307SPH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 5.5A (Ta) 4.5V, 10V 43mOhm @ 5.5A, 10V 2V @ 40µA 29 nC @ 10 V ±20V 805 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISZ040N03L5ISATMA1

ISZ040N03L5ISATMA1

MOSFET N-CH 30V 18A/40A TSDSON

Infineon Technologies
2,295 -

RFQ

ISZ040N03L5ISATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 40A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V 2V @ 250µA 17 nC @ 10 V ±20V 1100 pF @ 15 V - 2.1W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC100N03MSGATMA1

BSC100N03MSGATMA1

MOSFET N-CH 30V 12A/44A TDSON

Infineon Technologies
2,210 -

RFQ

BSC100N03MSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 44A (Tc) 4.5V, 10V 10mOhm @ 30A, 10V 2V @ 250µA 23 nC @ 10 V ±20V 1700 pF @ 15 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7201TRPBF

IRF7201TRPBF

MOSFET N-CH 30V 7.3A 8SO

Infineon Technologies
3,835 -

RFQ

IRF7201TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 7.3A (Tc) 4.5V, 10V 30mOhm @ 7.3A, 10V 1V @ 250µA 28 nC @ 10 V ±20V 550 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 8399 Record«Prev1... 949596979899100101...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário