Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7606TRPBF

IRF7606TRPBF

MOSFET P-CH 30V 3.6A MICRO8

Infineon Technologies
2,987 -

RFQ

IRF7606TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 90mOhm @ 2.4A, 10V 1V @ 250µA 30 nC @ 10 V ±20V 520 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS139H6906XTSA1

BSS139H6906XTSA1

MOSFET N-CH 250V 100MA SOT23-3

Infineon Technologies
2,188 -

RFQ

BSS139H6906XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk SIPMOS® Not For New Designs N-Channel MOSFET (Metal Oxide) 250 V 100mA (Ta) 0V, 10V 14Ohm @ 100mA, 10V 1V @ 56µA 3.5 nC @ 5 V ±20V 76 pF @ 25 V Depletion Mode 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML2502TRPBF

IRLML2502TRPBF

MOSFET N-CH 20V 4.2A SOT23

Infineon Technologies
3,189 -

RFQ

IRLML2502TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 2.5V, 4.5V 45mOhm @ 4.2A, 4.5V 1.2V @ 250µA 12 nC @ 5 V ±12V 740 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9335TRPBF

IRF9335TRPBF

MOSFET P-CH 30V 5.4A 8SO

Infineon Technologies
241,910 -

RFQ

IRF9335TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 5.4A (Ta) 4.5V, 10V 59mOhm @ 5.4A, 10V 2.4V @ 10µA 14 nC @ 10 V ±20V 386 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR120ZTRPBF

IRFR120ZTRPBF

MOSFET N-CH 100V 8.7A DPAK

Infineon Technologies
2,413 -

RFQ

IRFR120ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPN70R750P7SATMA1

IPN70R750P7SATMA1

MOSFET N-CH 700V 6.5A SOT223

Infineon Technologies
3,008 -

RFQ

IPN70R750P7SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 6.5A (Tc) 10V 750mOhm @ 1.4A, 10V 3.5V @ 70µA 8.3 nC @ 10 V ±16V 306 pF @ 400 V - 6.7W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPN80R3K3P7ATMA1

IPN80R3K3P7ATMA1

MOSFET N-CH 800V 1.9A SOT223

Infineon Technologies
2,913 -

RFQ

IPN80R3K3P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 1.9A (Tc) 10V 3.3Ohm @ 590mA, 10V 3.5V @ 30µA 5.8 nC @ 10 V ±20V 120 pF @ 500 V - 6.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR220NTRLPBF

IRFR220NTRLPBF

MOSFET N-CH 200V 5A DPAK

Infineon Technologies
2,066 -

RFQ

IRFR220NTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH8318TRPBF

IRFH8318TRPBF

MOSFET N-CH 30V 27A/120A PQFN

Infineon Technologies
2,177 -

RFQ

IRFH8318TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 120A (Tc) 4.5V, 10V 3.1mOhm @ 20A, 10V 2.35V @ 50µA 41 nC @ 10 V ±20V 3180 pF @ 10 V - 3.6W (Ta), 59W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9321TRPBF

IRF9321TRPBF

MOSFET P-CH 30V 15A 8SO

Infineon Technologies
3,488 -

RFQ

IRF9321TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 7.2mOhm @ 15A, 10V 2.4V @ 50µA 98 nC @ 10 V ±20V 2590 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7413ZTRPBF

IRF7413ZTRPBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
2,715 -

RFQ

IRF7413ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 10mOhm @ 13A, 10V 2.25V @ 25µA 14 nC @ 4.5 V ±20V 1210 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IAUC80N04S6L032ATMA1

IAUC80N04S6L032ATMA1

IAUC80N04S6L032ATMA1

Infineon Technologies
2,760 -

RFQ

IAUC80N04S6L032ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 3.29mOhm @ 40A, 10V 2V @ 18µA 25 nC @ 10 V ±16V 1515 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFL4105TRPBF

IRFL4105TRPBF

MOSFET N-CH 55V 3.7A SOT223

Infineon Technologies
2,463 -

RFQ

IRFL4105TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 3.7A (Ta) 10V 45mOhm @ 3.7A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 660 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSZ086P03NS3EGATMA1

BSZ086P03NS3EGATMA1

MOSFET P-CH 30V 13.5A/40A TSDSON

Infineon Technologies
3,551 -

RFQ

BSZ086P03NS3EGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta), 40A (Tc) 6V, 10V 8.6mOhm @ 20A, 10V 3.1V @ 105µA 57.5 nC @ 10 V ±25V 4785 pF @ 15 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISC026N03L5SATMA1

ISC026N03L5SATMA1

MOSFET N-CH 30V 24A/100A TDSON

Infineon Technologies
3,303 -

RFQ

ISC026N03L5SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 100A (Tc) 4.5V, 10V 2.6mOhm @ 30A, 10V 2V @ 250µA 26 nC @ 10 V ±20V 1700 pF @ 15 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC440N10NS3GATMA1

BSC440N10NS3GATMA1

MOSFET N-CH 100V 5.3A/18A TDSON

Infineon Technologies
5,000 -

RFQ

BSC440N10NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 5.3A (Ta), 18A (Tc) 6V, 10V 44mOhm @ 12A, 10V 3.5V @ 12µA 10.8 nC @ 10 V ±20V 810 pF @ 50 V - 29W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ110N06NS3GATMA1

BSZ110N06NS3GATMA1

MOSFET N-CH 60V 20A 8TSDSON

Infineon Technologies
2,068 -

RFQ

BSZ110N06NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 11mOhm @ 20A, 10V 4V @ 23µA 33 nC @ 10 V ±20V 2700 pF @ 30 V - 2.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3709ZTRPBF

IRFR3709ZTRPBF

MOSFET N-CH 30V 86A DPAK

Infineon Technologies
3,239 -

RFQ

IRFR3709ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 86A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2330 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP318SH6327XTSA1

BSP318SH6327XTSA1

MOSFET N-CH 60V 2.6A SOT223-4

Infineon Technologies
3,385 -

RFQ

BSP318SH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 60 V 2.6A (Tj) 4.5V, 10V 90mOhm @ 2.6A, 10V 2V @ 20µA 20 nC @ 10 V ±20V 380 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP297H6327XTSA1

BSP297H6327XTSA1

MOSFET N-CH 200V 660MA SOT223-4

Infineon Technologies
3,169 -

RFQ

BSP297H6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 200 V 660mA (Ta) 4.5V, 10V 1.8Ohm @ 660mA, 10V 1.8V @ 400µA 16.1 nC @ 10 V ±20V 357 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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