Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFS3006TRLPBF

IRFS3006TRLPBF

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies
3,414 -

RFQ

IRFS3006TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB108N15N3GATMA1

IPB108N15N3GATMA1

MOSFET N-CH 150V 83A D2PAK

Infineon Technologies
2,276 -

RFQ

IPB108N15N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 83A (Tc) 8V, 10V 10.8mOhm @ 83A, 10V 4V @ 160µA 55 nC @ 10 V ±20V 3230 pF @ 75 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPL60R105P7AUMA1

IPL60R105P7AUMA1

MOSFET N-CH 650V 33A 4VSON

Infineon Technologies
3,939 -

RFQ

IPL60R105P7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 105mOhm @ 10.5A, 10V 4V @ 530µA 45 nC @ 10 V ±20V 1952 pF @ 400 V - 137W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSC074N15NS5ATMA1

BSC074N15NS5ATMA1

MOSFET N-CH 150V 114A TSON-8-3

Infineon Technologies
2,975 -

RFQ

BSC074N15NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 150 V 114A (Tc) 8V, 10V 7.4mOhm @ 50A, 10V 4.6V @ 136µA 52 nC @ 10 V ±20V 4000 pF @ 75 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
IPB032N10N5ATMA1

IPB032N10N5ATMA1

MOSFET N-CH 100V 166A TO263-7

Infineon Technologies
2,654 -

RFQ

IPB032N10N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 166A (Tc) 6V, 10V 3.2mOhm @ 83A, 10V 3.8V @ 125µA 95 nC @ 10 V ±20V 6970 pF @ 50 V - 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUS240N08S5N019ATMA1

IAUS240N08S5N019ATMA1

MOSFET N-CH 80V 240A HSOG-8

Infineon Technologies
2,174 -

RFQ

IAUS240N08S5N019ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 240A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 160µA 130 nC @ 10 V ±20V 9264 pF @ 40 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP045N10N3GXKSA1

IPP045N10N3GXKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
2,828 -

RFQ

IPP045N10N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 4.5mOhm @ 100A, 10V 3.5V @ 150µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB073N15N5ATMA1

IPB073N15N5ATMA1

MOSFET N-CH 150V 114A TO263-3

Infineon Technologies
2,005 -

RFQ

IPB073N15N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 150 V 114A (Tc) 8V, 10V 7.3mOhm @ 57A, 10V 4.6V @ 160µA 61 nC @ 10 V ±20V 4700 pF @ 75 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R165CPATMA1

IPB60R165CPATMA1

MOSFET N-CH 600V 21A TO263-3

Infineon Technologies
3,542 -

RFQ

IPB60R165CPATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS3004TRL7PP

IRFS3004TRL7PP

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
3,693 -

RFQ

IRFS3004TRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.25mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9130 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPL60R125C7AUMA1

IPL60R125C7AUMA1

MOSFET N-CH 600V 17A 4VSON

Infineon Technologies
3,842 -

RFQ

IPL60R125C7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 125mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1500 pF @ 400 V - 103W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB027N10N5ATMA1

IPB027N10N5ATMA1

MOSFET N-CH 100V 120A D2PAK

Infineon Technologies
3,226 -

RFQ

IPB027N10N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 2.7mOhm @ 100A, 10V 3.8V @ 184µA 139 nC @ 10 V ±20V 10300 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT60R045CFD7XTMA1

IPT60R045CFD7XTMA1

MOSFET N-CH 600V 52A 8HSOF

Infineon Technologies
2,191 -

RFQ

IPT60R045CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 45mOhm @ 18A, 10V 4.5V @ 900µA 79 nC @ 10 V ±20V 3194 pF @ 400 V - 270W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP600N25N3GXKSA1

IPP600N25N3GXKSA1

MOSFET N-CH 250V 25A TO220-3

Infineon Technologies
2,042 -

RFQ

IPP600N25N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 25A (Tc) 10V 60mOhm @ 25A, 10V 4V @ 90µA 29 nC @ 10 V ±20V 2350 pF @ 100 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP4768PBF

IRFP4768PBF

MOSFET N-CH 250V 93A TO247AC

Infineon Technologies
3,635 -

RFQ

IRFP4768PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 93A (Tc) 10V 17.5mOhm @ 56A, 10V 5V @ 250µA 270 nC @ 10 V ±20V 10880 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) Through Hole
IAUT260N10S5N019ATMA1

IAUT260N10S5N019ATMA1

MOSFET N-CH 100V 260A 8HSOF

Infineon Technologies
3,351 -

RFQ

IAUT260N10S5N019ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 260A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 210µA 166 nC @ 10 V ±20V 11830 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R080P7ATMA1

IPB60R080P7ATMA1

MOSFET N-CH 650V 37A D2PAK

Infineon Technologies
2,603 -

RFQ

IPB60R080P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 37A (Tc) 10V 80mOhm @ 11.8A, 10V 4V @ 590µA 51 nC @ 10 V ±20V 2180 pF @ 400 V - 129W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB180N08S402ATMA1

IPB180N08S402ATMA1

MOSFET N-CH 80V 180A TO263-7

Infineon Technologies
2,962 -

RFQ

IPB180N08S402ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tc) 10V 2.2mOhm @ 100A, 10V 4V @ 220µA 167 nC @ 10 V ±20V 11550 pF @ 25 V - 277W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB4227PBF

IRFB4227PBF

MOSFET N-CH 200V 65A TO220AB

Infineon Technologies
2,107 -

RFQ

IRFB4227PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 65A (Tc) 10V 24mOhm @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 4600 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
IMBF170R1K0M1XTMA1

IMBF170R1K0M1XTMA1

SICFET N-CH 1700V 5.2A TO263-7

Infineon Technologies
2,289 -

RFQ

IMBF170R1K0M1XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 5.2A (Tc) 12V, 15V 1000mOhm @ 1A, 15V 5.7V @ 1.1mA 5 nC @ 12 V +20V, -10V 275 pF @ 1000 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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