Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7815TRPBF

IRF7815TRPBF

MOSFET N-CH 150V 5.1A 8SO

Infineon Technologies
2,450 -

RFQ

IRF7815TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 5.1A (Ta) 10V 43mOhm @ 3.1A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1647 pF @ 75 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD60R950C6ATMA1

IPD60R950C6ATMA1

MOSFET N-CH 600V 4.4A TO252-3

Infineon Technologies
2,357 -

RFQ

IPD60R950C6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSP149H6906XTSA1

BSP149H6906XTSA1

MOSFET N-CH 200V 660MA SOT223-4

Infineon Technologies
892 -

RFQ

BSP149H6906XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk SIPMOS® Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 660mA (Ta) 0V, 10V 1.8Ohm @ 660mA, 10V 1V @ 400µA 14 nC @ 5 V ±20V 430 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR7540TRPBF

IRFR7540TRPBF

MOSFET N-CH 60V 90A DPAK

Infineon Technologies
2,253 -

RFQ

IRFR7540TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 6V, 10V 4.8mOhm @ 66A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4360 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7424TRPBF

IRF7424TRPBF

MOSFET P-CH 30V 11A 8SO

Infineon Technologies
2,795 -

RFQ

IRF7424TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13.5mOhm @ 11A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 4030 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR24N15DTRPBF

IRFR24N15DTRPBF

MOSFET N-CH 150V 24A DPAK

Infineon Technologies
2,025 -

RFQ

IRFR24N15DTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 24A (Tc) 10V 95mOhm @ 14A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 890 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISZ019N03L5SATMA1

ISZ019N03L5SATMA1

MOSFET N-CH 30V 22A/40A TSDSON

Infineon Technologies
2,675 -

RFQ

ISZ019N03L5SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 40A (Tc) 4.5V, 10V 1.9mOhm @ 20A, 10V 2V @ 250µA 44 nC @ 10 V ±20V 2800 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
IPD80R1K2P7ATMA1

IPD80R1K2P7ATMA1

MOSFET N-CH 800V 4.5A TO252-3

Infineon Technologies
2,598 -

RFQ

IPD80R1K2P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.2Ohm @ 1.7A, 10V 3.5V @ 80µA 11 nC @ 10 V ±20V 300 pF @ 500 V - 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ0901NSATMA1

BSZ0901NSATMA1

MOSFET N-CH 30V 22A/40A 8TSDSON

Infineon Technologies
2,217 -

RFQ

BSZ0901NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 40A (Tc) 4.5V, 10V 2mOhm @ 20A, 10V 2.2V @ 250µA 45 nC @ 10 V ±20V 2850 pF @ 15 V - 2.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUC120N06S5L032ATMA1

IAUC120N06S5L032ATMA1

MOSFET N-CH 60V 120A TDSON-8-34

Infineon Technologies
3,800 -

RFQ

IAUC120N06S5L032ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tj) - 3.2mOhm @ 60A, 10V 2.2V @ 44µA 51.5 nC @ 10 V ±16V 3823 pF @ 30 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD30N10S3L34ATMA1

IPD30N10S3L34ATMA1

MOSFET N-CH 100V 30A TO252-3

Infineon Technologies
740 -

RFQ

IPD30N10S3L34ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Tc) 4.5V, 10V 31mOhm @ 30A, 10V 2.4V @ 29µA 31 nC @ 10 V ±20V 1976 pF @ 25 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP613PH6327XTSA1

BSP613PH6327XTSA1

MOSFET P-CH 60V 2.9A SOT223-4

Infineon Technologies
2,412 -

RFQ

BSP613PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 2.9A (Ta) 10V 130mOhm @ 2.9A, 10V 4V @ 1mA 33 nC @ 10 V ±20V 875 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP135H6433XTMA1

BSP135H6433XTMA1

MOSFET N-CH 600V 120MA SOT223

Infineon Technologies
3,520 -

RFQ

BSP135H6433XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISC011N03L5SATMA1

ISC011N03L5SATMA1

MOSFET N-CH 30V 37A/100A TDSON

Infineon Technologies
2,921 -

RFQ

ISC011N03L5SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 37A (Ta), 100A (Tc) 4.5V, 10V 1.1mOhm @ 30A, 10V 2V @ 250µA 72 nC @ 10 V ±20V 4700 pF @ 15 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ067N06LS3GATMA1

BSZ067N06LS3GATMA1

MOSFET N-CH 60V 14A/20A 8TSDSON

Infineon Technologies
2,538 -

RFQ

BSZ067N06LS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Ta), 20A (Tc) 4.5V, 10V 6.7mOhm @ 20A, 10V 2.2V @ 35µA 67 nC @ 10 V ±20V 5100 pF @ 30 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISC028N04NM5ATMA1

ISC028N04NM5ATMA1

40V 2.8M OPTIMOS MOSFET SUPERSO8

Infineon Technologies
2,923 -

RFQ

ISC028N04NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 121A (Tc) 7V, 10V 2.8mOhm @ 50A, 10V 3.4V @ 30µA 38 nC @ 10 V ±20V 2700 pF @ 20 V - 3W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB18P06PGATMA1

SPB18P06PGATMA1

MOSFET P-CH 60V 18.7A D2PAK

Infineon Technologies
3,374 -

RFQ

SPB18P06PGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 18.7A (Ta) 10V 130mOhm @ 13.2A, 10V 4V @ 1mA 28 nC @ 10 V ±20V 860 pF @ 25 V - 81.1W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRF6609TR1PBF

IRF6609TR1PBF

MOSFET N-CH 20V 31A DIRECTFET

Infineon Technologies
3,401 -

RFQ

IRF6609TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 31A (Ta), 150A (Tc) 4.5V, 10V 2mOhm @ 31A, 10V 2.45V @ 250µA 69 nC @ 4.5 V ±20V 6290 pF @ 10 V - 1.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6609TRPBF

IRF6609TRPBF

MOSFET N-CH 20V 31A DIRECTFET

Infineon Technologies
2,196 -

RFQ

IRF6609TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 31A (Ta), 150A (Tc) 4.5V, 10V 2mOhm @ 31A, 10V 2.45V @ 250µA 69 nC @ 4.5 V ±20V 6290 pF @ 10 V - 1.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6610TR1PBF

IRF6610TR1PBF

MOSFET N-CH 20V 15A DIRECTFET

Infineon Technologies
2,778 -

RFQ

IRF6610TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 15A (Ta), 66A (Tc) 4.5V, 10V 6.8mOhm @ 15A, 10V 2.55V @ 250µA 17 nC @ 4.5 V ±20V 1520 pF @ 10 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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1800+ Fabricantes em todo o mundo
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15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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