Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD65R380E6ATMA1

IPD65R380E6ATMA1

MOSFET N-CH 650V 10.6A TO252-3

Infineon Technologies
2,493 -

RFQ

IPD65R380E6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ E6 Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50P03P4L11ATMA1

IPD50P03P4L11ATMA1

MOSFET P-CH 30V 50A TO252-3

Infineon Technologies
2,500 -

RFQ

IPD50P03P4L11ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 10.5mOhm @ 50A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90N06S404ATMA2

IPD90N06S404ATMA2

MOSFET N-CH 60V 90A TO252-31

Infineon Technologies
2,079 -

RFQ

IPD90N06S404ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 3.8mOhm @ 90A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7458TRPBF

IRF7458TRPBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
3,148 -

RFQ

IRF7458TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 10V, 16V 8mOhm @ 14A, 16V 4V @ 250µA 59 nC @ 10 V ±30V 2410 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU7546PBF

IRFU7546PBF

MOSFET N-CH 60V 56A IPAK

Infineon Technologies
2,884 -

RFQ

IRFU7546PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 6V, 10V 7.9mOhm @ 43A, 10V 3.7V @ 100µA 87 nC @ 10 V ±20V 3020 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB80P04P4L06ATMA2

IPB80P04P4L06ATMA2

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies
2,820 -

RFQ

IPB80P04P4L06ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 6.7mOhm @ 80A, 10V 2.2V @ 150µA 104 nC @ 10 V +5V, -16V 6580 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6623TRPBF

IRF6623TRPBF

MOSFET N-CH 20V 16A DIRECTFET

Infineon Technologies
2,766 -

RFQ

IRF6623TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta), 55A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V 2.2V @ 250µA 17 nC @ 4.5 V ±20V 1360 pF @ 10 V - 1.4W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFH5020TRPBF

IRFH5020TRPBF

MOSFET N-CH 200V 5.1A 8PQFN

Infineon Technologies
3,637 -

RFQ

IRFH5020TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 5.1A (Ta) 10V 55mOhm @ 7.5A, 10V 5V @ 150µA 54 nC @ 10 V ±20V 2290 pF @ 100 V - 3.6W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC100N10NSFGATMA1

BSC100N10NSFGATMA1

MOSFET N-CH 100V 11.4/90A 8TDSON

Infineon Technologies
2,204 -

RFQ

BSC100N10NSFGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 11.4A (Ta), 90A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 110µA 44 nC @ 10 V ±20V 2900 pF @ 50 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH5210TRPBF

IRFH5210TRPBF

MOSFET N-CH 100V 10A/55A 8PQFN

Infineon Technologies
2,278 -

RFQ

IRFH5210TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta), 55A (Tc) 10V 14.9mOhm @ 33A, 10V 4V @ 100µA 59 nC @ 10 V ±20V 2570 pF @ 25 V - 3.6W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3705ZSTRLPBF

IRL3705ZSTRLPBF

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
6,400 -

RFQ

IRL3705ZSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V ±16V 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB026N06NATMA1

IPB026N06NATMA1

MOSFET N-CH 60V 25A/100A D2PAK

Infineon Technologies
2,829 -

RFQ

IPB026N06NATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 25A (Ta), 100A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V 2.8V @ 75µA 56 nC @ 10 V ±20V 4100 pF @ 30 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB3607PBF

IRFB3607PBF

MOSFET N-CH 75V 80A TO220AB

Infineon Technologies
2,227 -

RFQ

IRFB3607PBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPD07N60C3ATMA1

SPD07N60C3ATMA1

LOW POWER_LEGACY

Infineon Technologies
2,136 -

RFQ

SPD07N60C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS4615TRLPBF

IRFS4615TRLPBF

MOSFET N-CH 150V 33A D2PAK

Infineon Technologies
2,915 -

RFQ

IRFS4615TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUC120N04S6N010ATMA1

IAUC120N04S6N010ATMA1

MOSFET N-CH 40V 150A TDSON-8-34

Infineon Technologies
3,021 -

RFQ

IAUC120N04S6N010ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-6 Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 7V, 10V 1.03mOhm @ 60A, 10V 3V @ 90µA 108 nC @ 10 V ±20V 6878 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90P04P4L04ATMA1

IPD90P04P4L04ATMA1

MOSFET P-CH 40V 90A TO252-3

Infineon Technologies
2,173 -

RFQ

IPD90P04P4L04ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 4.5V, 10V 4.3mOhm @ 90A, 10V 2.2V @ 250µA 176 nC @ 10 V ±16V 11570 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPS70R360P7SAKMA1

IPS70R360P7SAKMA1

MOSFET N-CH 700V 12.5A TO251-3

Infineon Technologies
2,919 -

RFQ

IPS70R360P7SAKMA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 12.5A (Tc) 10V 360mOhm @ 3A, 10V 3.5V @ 150µA 16.4 nC @ 10 V ±16V 517 pF @ 400 V - 59.5W (Tc) -40°C ~ 150°C (TJ) Through Hole
BSC004NE2LS5ATMA1

BSC004NE2LS5ATMA1

TRENCH <= 40V

Infineon Technologies
2,075 -

RFQ

BSC004NE2LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 40A (Ta), 479A (Tc) 4.5V, 10V 0.45mOhm @ 30A, 10V 2V @ 10mA 238 nC @ 10 V ±20V 11000 pF @ 12.5 V - 2.5W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC005N03LS5ATMA1

BSC005N03LS5ATMA1

TRENCH <= 40V

Infineon Technologies
3,618 -

RFQ

BSC005N03LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 42A (Ta), 433A (Tc) 4.5V, 10V 0.55mOhm @ 50A, 10V 2V @ 250µA 122 nC @ 10 V ±20V 8900 pF @ 15 V - 3W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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