Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPD03N60C3ATMA1

SPD03N60C3ATMA1

MOSFET N-CH 600V 3.2A TO252-3

Infineon Technologies
7,500 -

RFQ

SPD03N60C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ44ZPBF

IRLZ44ZPBF

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies
700 -

RFQ

IRLZ44ZPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 4.5V, 10V 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD025N06NATMA1

IPD025N06NATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies
2,477 -

RFQ

IPD025N06NATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 6V, 10V 2.5mOhm @ 90A, 10V 2.8V @ 95µA 71 nC @ 10 V ±20V 5200 pF @ 30 V - 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL7833STRLPBF

IRL7833STRLPBF

MOSFET N-CH 30V 150A D2PAK

Infineon Technologies
2,747 -

RFQ

IRL7833STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 3.8mOhm @ 38A, 10V 2.3V @ 250µA 47 nC @ 4.5 V ±20V 4170 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF540ZPBF

IRF540ZPBF

MOSFET N-CH 100V 36A TO220AB

Infineon Technologies
2,118 -

RFQ

IRF540ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 10V 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1770 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF7675M2TR

AUIRF7675M2TR

MOSFET N-CH 150V 4.4A DIRECTFET

Infineon Technologies
2,715 -

RFQ

AUIRF7675M2TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 4.4A (Ta), 18A (Tc) 10V 56mOhm @ 11A, 10V 5V @ 100µA 32 nC @ 10 V ±20V 1360 pF @ 25 V - 2.7W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB65R660CFDAATMA1

IPB65R660CFDAATMA1

MOSFET N-CH 650V 6A D2PAK

Infineon Technologies
3,733 -

RFQ

IPB65R660CFDAATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 3.2A, 10V 4.5V @ 200µA 20 nC @ 10 V ±20V 543 pF @ 100 V - 62.5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSC030P03NS3GAUMA1

BSC030P03NS3GAUMA1

MOSFET P-CH 30V 25.4/100A 8TDSON

Infineon Technologies
3,202 -

RFQ

BSC030P03NS3GAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 25.4A (Ta), 100A (Tc) 6V, 10V 3mOhm @ 50A, 10V 3.1V @ 345µA 186 nC @ 10 V ±25V 14000 pF @ 15 V - 2.5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF8010STRLPBF

IRF8010STRLPBF

MOSFET N-CH 100V 80A D2PAK

Infineon Technologies
2,124 -

RFQ

IRF8010STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 15mOhm @ 45A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3830 pF @ 25 V - 260W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFI530NPBF

IRFI530NPBF

MOSFET N-CH 100V 12A TO220AB FP

Infineon Technologies
34,440 -

RFQ

IRFI530NPBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 110mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB049NE7N3GATMA1

IPB049NE7N3GATMA1

MOSFET N-CH 75V 80A D2PAK

Infineon Technologies
3,687 -

RFQ

IPB049NE7N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 4.9mOhm @ 80A, 10V 3.8V @ 91µA 68 nC @ 10 V ±20V 4750 pF @ 37.5 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPAW60R360P7SXKSA1

IPAW60R360P7SXKSA1

MOSFET N-CH 650V 9A TO220

Infineon Technologies
2,547 -

RFQ

IPAW60R360P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±30V 555 pF @ 400 V - 22W (Tc) -40°C ~ 150°C (TJ) Through Hole
BSC060N10NS3GATMA1

BSC060N10NS3GATMA1

MOSFET N-CH 100V 14.9/90A 8TDSON

Infineon Technologies
2,397 -

RFQ

BSC060N10NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 14.9A (Ta), 90A (Tc) 6V, 10V 6mOhm @ 50A, 10V 3.5V @ 90µA 68 nC @ 10 V ±20V 4900 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR5305TR

AUIRFR5305TR

MOSFET P-CH 55V 31A DPAK

Infineon Technologies
2,248 -

RFQ

AUIRFR5305TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) - 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V - 1200 pF @ 25 V - - - Surface Mount
IRF6614TRPBF

IRF6614TRPBF

MOSFET N-CH 40V 12.7A DIRECTFET

Infineon Technologies
2,052 -

RFQ

IRF6614TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 12.7A (Ta), 55A (Tc) 4.5V, 10V 8.3mOhm @ 12.7A, 10V 2.25V @ 250µA 29 nC @ 4.5 V ±20V 2560 pF @ 20 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPL60R285P7AUMA1

IPL60R285P7AUMA1

MOSFET N-CH 600V 13A 4VSON

Infineon Technologies
3,515 -

RFQ

IPL60R285P7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 285mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 59W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP039N04LGXKSA1

IPP039N04LGXKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies
3,418 -

RFQ

IPP039N04LGXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 3.9mOhm @ 80A, 10V 2V @ 45µA 78 nC @ 10 V ±20V 6100 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB049N08N5ATMA1

IPB049N08N5ATMA1

MOSFET N-CH 80V 80A D2PAK

Infineon Technologies
3,318 -

RFQ

IPB049N08N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 4.9mOhm @ 80A, 10V 3.8V @ 66µA 53 nC @ 10 V ±20V 3770 pF @ 40 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC010N04LSTATMA1

BSC010N04LSTATMA1

MOSFET N-CH 40V 39A/100A TDSON

Infineon Technologies
2,444 -

RFQ

BSC010N04LSTATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 39A (Ta), 100A (Tc) 4.5V, 10V 1mOhm @ 50A, 10V 2V @ 250µA 133 nC @ 10 V ±20V 9520 pF @ 20 V - 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC022N03S

BSC022N03S

MOSFET N-CH 30V 28A/100A TDSON

Infineon Technologies
3,118 -

RFQ

BSC022N03S

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 100A (Tc) 4.5V, 10V 2.2mOhm @ 50A, 10V 2V @ 100µA 58 nC @ 5 V ±20V 7490 pF @ 15 V - 2.8W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 8399 Record«Prev1... 105106107108109110111112...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário