Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BTS282Z E3230

BTS282Z E3230

MOSFET N-CH 49V 80A TO220-7

Infineon Technologies
3,653 -

RFQ

BTS282Z E3230

Ficha técnica

Tube TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 49 V 80A (Tc) 4.5V, 10V 6.5mOhm @ 36A, 10V 2V @ 240µA 232 nC @ 10 V ±20V 4800 pF @ 25 V Temperature Sensing Diode 300W (Tc) -40°C ~ 175°C (TJ) Through Hole
BUZ30A E3045A

BUZ30A E3045A

MOSFET N-CH 200V 21A D2PAK

Infineon Technologies
3,214 -

RFQ

BUZ30A E3045A

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 21A (Tc) 10V 130mOhm @ 13.5A, 10V 4V @ 1mA - ±20V 1900 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUZ31

BUZ31

MOSFET N-CH 200V 14.5A TO220-3

Infineon Technologies
3,111 -

RFQ

BUZ31

Ficha técnica

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 14.5A (Tc) 5V 200mOhm @ 9A, 5V 4V @ 1mA - ±20V 1120 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ31 E3045A

BUZ31 E3045A

MOSFET N-CH 200V 14.5A D2PAK

Infineon Technologies
3,915 -

RFQ

BUZ31 E3045A

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 14.5A (Tc) 10V 200mOhm @ 9A, 5V 4V @ 1mA - ±20V 1120 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUZ31 E3046

BUZ31 E3046

MOSFET N-CH 200V 14.5A TO262-3

Infineon Technologies
2,242 -

RFQ

BUZ31 E3046

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 14.5A (Tc) 5V 200mOhm @ 9A, 5V 4V @ 1mA - ±20V 1120 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ31L

BUZ31L

MOSFET N-CH 200V 13.5A TO220-3

Infineon Technologies
3,463 -

RFQ

BUZ31L

Ficha técnica

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 13.5A (Tc) 5V 200mOhm @ 7A, 5V 2V @ 1mA - ±20V 1600 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ31L E3044A

BUZ31L E3044A

MOSFET N-CH 200V 13.5A TO220-3

Infineon Technologies
2,588 -

RFQ

BUZ31L E3044A

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 13.5A (Tc) 5V 200mOhm @ 7A, 5V 2V @ 1mA - ±20V 1600 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ32

BUZ32

MOSFET N-CH 200V 9.5A TO220-3

Infineon Technologies
2,554 -

RFQ

BUZ32

Ficha técnica

Tube,Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 400mOhm @ 6A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ32 E3045A

BUZ32 E3045A

MOSFET N-CH 200V 9.5A D2PAK

Infineon Technologies
3,004 -

RFQ

BUZ32 E3045A

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 400mOhm @ 6A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUZ32H3045AATMA1

BUZ32H3045AATMA1

MOSFET N-CH 200V 9.5A TO263-3

Infineon Technologies
3,357 -

RFQ

BUZ32H3045AATMA1

Ficha técnica

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 400mOhm @ 6A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUZ73E3046XK

BUZ73E3046XK

MOSFET N-CH 200V 7A TO220-3

Infineon Technologies
3,776 -

RFQ

BUZ73E3046XK

Ficha técnica

Tube SIPMOS® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ73A

BUZ73A

MOSFET N-CH 200V 5.5A TO220-3

Infineon Technologies
2,809 -

RFQ

BUZ73A

Ficha técnica

Tube,Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 600mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ73AE3046XK

BUZ73AE3046XK

MOSFET N-CH 200V 5.5A TO220-3

Infineon Technologies
2,715 -

RFQ

BUZ73AE3046XK

Ficha técnica

Tube,Tube SIPMOS® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 600mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC350N20NSFDATMA1

BSC350N20NSFDATMA1

MOSFET N-CH 200V 35A TDSON-8-1

Infineon Technologies
3,307 -

RFQ

BSC350N20NSFDATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 35A (Tc) 10V 35mOhm @ 35A, 10V 4V @ 90µA 30 nC @ 10 V ±20V 2410 pF @ 100 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC014N06NSSCATMA1

BSC014N06NSSCATMA1

MOSFET N-CH 60V 261A WSON-8

Infineon Technologies
2,999 -

RFQ

BSC014N06NSSCATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 261A (Tc) 6V, 10V 1.4mOhm @ 50A, 10V 3.3V @ 120µA 104 nC @ 10 V ±20V 8125 pF @ 30 V - 3W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB019N06L3GATMA1

IPB019N06L3GATMA1

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies
3,326 -

RFQ

IPB019N06L3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 1.9mOhm @ 100A, 10V 2.2V @ 196µA 166 nC @ 4.5 V ±20V 28000 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3808STRLPBF

IRF3808STRLPBF

MOSFET N-CH 75V 106A D2PAK

Infineon Technologies
150 -

RFQ

IRF3808STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 106A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC670N25NSFDATMA1

BSC670N25NSFDATMA1

MOSFET N-CH 250V 24A TDSON-8-1

Infineon Technologies
3,086 -

RFQ

BSC670N25NSFDATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 24A (Tc) 10V 67mOhm @ 24A, 10V 4V @ 90µA 30 nC @ 10 V ±20V 2410 pF @ 125 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3705NPBF

IRL3705NPBF

MOSFET N-CH 55V 89A TO220AB

Infineon Technologies
3,193 -

RFQ

IRL3705NPBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 89A (Tc) 4V, 10V 10mOhm @ 46A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPA04N80C3XKSA1

SPA04N80C3XKSA1

MOSFET N-CH 800V 4A TO220-FP

Infineon Technologies
3,520 -

RFQ

SPA04N80C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.3Ohm @ 2.5A, 10V 3.9V @ 240µA 31 nC @ 10 V ±20V 570 pF @ 100 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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