Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPI80N03S2-03

SPI80N03S2-03

MOSFET N-CH 30V 80A TO262-3

Infineon Technologies
2,567 -

RFQ

SPI80N03S2-03

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 3.4mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7020 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPI80N03S2L-03

SPI80N03S2L-03

MOSFET N-CH 30V 80A TO262-3

Infineon Technologies
3,742 -

RFQ

SPI80N03S2L-03

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.1mOhm @ 80A, 10V 2V @ 250µA 220 nC @ 10 V ±20V 8180 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB180N04S400ATMA1

IPB180N04S400ATMA1

MOSFET N-CH 40V 180A TO263-7

Infineon Technologies
3,892 -

RFQ

IPB180N04S400ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 0.98mOhm @ 100A, 10V 4V @ 230µA 286 nC @ 10 V ±20V 22880 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IMBF170R450M1XTMA1

IMBF170R450M1XTMA1

SICFET N-CH 1700V 9.8A TO263-7

Infineon Technologies
3,542 -

RFQ

IMBF170R450M1XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 9.8A (Tc) 12V, 15V 450mOhm @ 2A, 15V 5.7V @ 2.5mA 11 nC @ 12 V +20V, -10V 610 pF @ 1000 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP4229PBF

IRFP4229PBF

MOSFET N-CH 250V 44A TO247AC

Infineon Technologies
3,427 -

RFQ

IRFP4229PBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 44A (Tc) 10V 46mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4560 pF @ 25 V - 310W (Tc) -40°C ~ 175°C (TJ) Through Hole
IPP111N15N3GXKSA1

IPP111N15N3GXKSA1

MOSFET N-CH 150V 83A TO220-3

Infineon Technologies
2,312 -

RFQ

IPP111N15N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 83A (Tc) 8V, 10V 11.1mOhm @ 83A, 10V 4V @ 160µA 55 nC @ 10 V ±20V 3230 pF @ 75 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLP3034PBF

IRLP3034PBF

MOSFET N-CH 40V 195A TO247AC

Infineon Technologies
2,085 -

RFQ

IRLP3034PBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.7mOhm @ 195A, 10V 2.5V @ 250µA 162 nC @ 4.5 V ±20V 10315 pF @ 25 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPT60R125CFD7XTMA1

IPT60R125CFD7XTMA1

MOSFET N-CH 600V 21A 8HSOF

Infineon Technologies
3,490 -

RFQ

IPT60R125CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 125mOhm @ 6.8A, 10V 4.5V @ 340µA 31 nC @ 10 V ±20V 1330 pF @ 400 V - 127W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP076N15N5AKSA1

IPP076N15N5AKSA1

MOSFET N-CH 150V 112A TO220-3

Infineon Technologies
3,193 -

RFQ

IPP076N15N5AKSA1

Ficha técnica

Tube OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 150 V 112A (Tc) 8V, 10V 7.6mOhm @ 56A, 10 4.6V @ 160µA 21 nC @ 10 V ±20V 4700 pF @ 75 V Standard 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPT111N20NFDATMA1

IPT111N20NFDATMA1

MOSFET N-CH 200V 96A 8HSOF

Infineon Technologies
3,494 -

RFQ

IPT111N20NFDATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 96A (Tc) 10V 11.1mOhm @ 96A, 10V 4V @ 267µA 87 nC @ 10 V ±20V 7000 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R099CPAATMA1

IPB60R099CPAATMA1

MOSFET N-CH 600V 31A TO263-3

Infineon Technologies
3,890 -

RFQ

IPB60R099CPAATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 105mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFI3205PBF

IRFI3205PBF

MOSFET N-CH 55V 64A TO220AB FP

Infineon Technologies
2,970 -

RFQ

IRFI3205PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 8mOhm @ 34A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMBG120R220M1HXTMA1

IMBG120R220M1HXTMA1

SICFET N-CH 1.2KV 13A TO263

Infineon Technologies
2,062 -

RFQ

IMBG120R220M1HXTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 13A (Tc) - 294mOhm @ 4A, 18V 5.7V @ 1.6mA 9.4 nC @ 18 V +18V, -15V 312 pF @ 800 V Standard 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPI80N03S2L-04

SPI80N03S2L-04

MOSFET N-CH 30V 80A TO262-3

Infineon Technologies
3,010 -

RFQ

SPI80N03S2L-04

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.2mOhm @ 80A, 10V 2V @ 130µA 105 nC @ 10 V ±20V 3900 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPI80N03S2L-05

SPI80N03S2L-05

MOSFET N-CH 30V 80A TO262-3

Infineon Technologies
3,821 -

RFQ

SPI80N03S2L-05

Ficha técnica

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 5.2mOhm @ 55A, 10V 2V @ 110µA 89.7 nC @ 10 V ±20V 3320 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPI80N03S2L-06

SPI80N03S2L-06

MOSFET N-CH 30V 80A TO262-3

Infineon Technologies
2,078 -

RFQ

SPI80N03S2L-06

Ficha técnica

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 6.2mOhm @ 80A, 10V 2V @ 80µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPI80N04S2-04

SPI80N04S2-04

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies
2,926 -

RFQ

SPI80N04S2-04

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 6980 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPI80N06S-08

SPI80N06S-08

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
2,395 -

RFQ

SPI80N06S-08

Ficha técnica

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 80A, 10V 4V @ 240µA 187 nC @ 10 V ±20V 3660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPI80N06S2-07

SPI80N06S2-07

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
3,199 -

RFQ

SPI80N06S2-07

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.6mOhm @ 68A, 10V 4V @ 180µA 110 nC @ 10 V ±20V 4540 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPI80N06S2-08

SPI80N06S2-08

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
2,808 -

RFQ

SPI80N06S2-08

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 58A, 10V 4V @ 150µA 96 nC @ 10 V ±20V 3800 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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