Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPB73N03S2L-08 G

SPB73N03S2L-08 G

MOSFET N-CH 30V 73A TO263-3

Infineon Technologies
3,229 -

RFQ

SPB73N03S2L-08 G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 73A (Tc) 4.5V, 10V 8.1mOhm @ 36A, 10V 2V @ 55µA 46.2 nC @ 10 V ±20V 1710 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB77N06S2-12

SPB77N06S2-12

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
3,851 -

RFQ

SPB77N06S2-12

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 12mOhm @ 38A, 10V 4V @ 93µA 60 nC @ 10 V ±20V 2350 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N03S2-03

SPB80N03S2-03

MOSFET N-CH 30V 80A TO263-3

Infineon Technologies
3,566 -

RFQ

SPB80N03S2-03

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 3.1mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7020 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N03S203GATMA1

SPB80N03S203GATMA1

MOSFET N-CH 30V 80A TO263-3

Infineon Technologies
33,000 -

RFQ

SPB80N03S203GATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 3.1mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7020 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N03S2L-05 G

SPB80N03S2L-05 G

MOSFET N-CH 30V 80A TO263-3

Infineon Technologies
2,278 -

RFQ

SPB80N03S2L-05 G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.9mOhm @ 55A, 10V 2V @ 110µA 89.7 nC @ 10 V ±20V 3320 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N03S2L-06 G

SPB80N03S2L-06 G

MOSFET N-CH 30V 80A TO263-3

Infineon Technologies
2,691 -

RFQ

SPB80N03S2L-06 G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 5.9mOhm @ 80A, 10V 2V @ 80µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N04S2-04

SPB80N04S2-04

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies
2,624 -

RFQ

SPB80N04S2-04

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.4mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 6980 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N04S2-H4

SPB80N04S2-H4

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies
3,044 -

RFQ

SPB80N04S2-H4

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 5890 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N04S2L-03

SPB80N04S2L-03

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies
3,348 -

RFQ

SPB80N04S2L-03

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 3.1mOhm @ 80A, 10V 2V @ 250µA 213 nC @ 10 V ±20V 7930 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N06S2-05

SPB80N06S2-05

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
3,611 -

RFQ

SPB80N06S2-05

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 4.8mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 6790 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N06S2-07

SPB80N06S2-07

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,008 -

RFQ

SPB80N06S2-07

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.6mOhm @ 68A, 10V 4V @ 180µA 110 nC @ 10 V ±20V 4540 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N06S2-08

SPB80N06S2-08

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,900 -

RFQ

SPB80N06S2-08

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 58A, 10V 4V @ 150µA 96 nC @ 10 V ±20V 3800 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N06S2-09

SPB80N06S2-09

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
3,208 -

RFQ

SPB80N06S2-09

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 9.1mOhm @ 50A, 10V 4V @ 125µA 80 nC @ 10 V ±20V 3140 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N06S2-H5

SPB80N06S2-H5

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,015 -

RFQ

SPB80N06S2-H5

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.5mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 5500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP65R190CFDXKSA2

IPP65R190CFDXKSA2

MOSFET N-CH 650V 17.5A TO220-3

Infineon Technologies
3,984 -

RFQ

IPP65R190CFDXKSA2

Ficha técnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB180N10S402ATMA1

IPB180N10S402ATMA1

MOSFET N-CH 100V 180A TO263-7

Infineon Technologies
3,015 -

RFQ

IPB180N10S402ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 2.5mOhm @ 100A, 10V 3.5V @ 275µA 200 nC @ 10 V ±20V 14600 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPW11N80C3FKSA1

SPW11N80C3FKSA1

MOSFET N-CH 800V 11A TO247-3

Infineon Technologies
2,570 -

RFQ

SPW11N80C3FKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 450mOhm @ 7.1A, 10V 3.9V @ 680µA 85 nC @ 10 V ±20V 1600 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB65R090CFD7ATMA1

IPB65R090CFD7ATMA1

HIGH POWER_NEW

Infineon Technologies
3,699 -

RFQ

IPB65R090CFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 90mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 127W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB4229PBF

IRFB4229PBF

MOSFET N-CH 250V 46A TO220AB

Infineon Technologies
2,049 -

RFQ

IRFB4229PBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 46A (Tc) 10V 46mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4560 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRFB4115PBF

IRFB4115PBF

MOSFET N-CH 150V 104A TO220AB

Infineon Technologies
3,593 -

RFQ

IRFB4115PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 104A (Tc) 10V 11mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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