Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPU04N03LA

IPU04N03LA

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies
3,227 -

RFQ

IPU04N03LA

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 80µA 41 nC @ 5 V ±20V 5199 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R099C6FKSA1

IPW60R099C6FKSA1

MOSFET N-CH 600V 37.9A TO247-3

Infineon Technologies
2,099 -

RFQ

IPW60R099C6FKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 18.1A, 10V 3.5V @ 1.21mA 119 nC @ 10 V ±20V 2660 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT020N10N5ATMA1

IPT020N10N5ATMA1

MOSFET N-CH 100V 31A/260A 8HSOF

Infineon Technologies
2,490 -

RFQ

IPT020N10N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Ta), 260A (Tc) 6V, 10V 2mOhm @ 150A, 10V 3.8V @ 202µA 152 nC @ 10 V ±20V 11000 pF @ 50 V - 273W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF100B201

IRF100B201

MOSFET N-CH 100V 192A TO220AB

Infineon Technologies
3,292 -

RFQ

IRF100B201

Ficha técnica

Bulk,Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 192A (Tc) 10V 4.2mOhm @ 115A, 10V 4V @ 250µA 255 nC @ 10 V ±20V 9500 pF @ 50 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS4310TRLPBF

IRFS4310TRLPBF

MOSFET N-CH 100V 130A D2PAK

Infineon Technologies
2,139 -

RFQ

IRFS4310TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP17N25S3100AKSA1

IPP17N25S3100AKSA1

MOSFET N-CH 250V 17A TO220-3

Infineon Technologies
3,001 -

RFQ

IPP17N25S3100AKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 17A (Tc) 10V 100mOhm @ 17A, 10V 4V @ 54µA 19 nC @ 10 V ±20V 1500 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR4620TRL

AUIRFR4620TRL

MOSFET N-CH 200V 24A DPAK

Infineon Technologies
3,998 -

RFQ

AUIRFR4620TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 78mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLS4030TRL7PP

IRLS4030TRL7PP

MOSFET N-CH 100V 190A D2PAK

Infineon Technologies
3,783 -

RFQ

IRLS4030TRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 4.5V, 10V 3.9mOhm @ 110A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11490 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R190P6XKSA1

IPA60R190P6XKSA1

MOSFET N-CH 600V 20.2A TO220-FP

Infineon Technologies
2,919 -

RFQ

IPA60R190P6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 7.6A, 10V 4.5V @ 630µ 37 nC @ 10 V ±20V 1750 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB7430PBF

IRFB7430PBF

MOSFET N CH 40V 195A TO220

Infineon Technologies
3,249 -

RFQ

IRFB7430PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.3mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU04N03LA G

IPU04N03LA G

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies
2,820 -

RFQ

IPU04N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 80µA 41 nC @ 5 V ±20V 5199 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU04N03LB G

IPU04N03LB G

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies
2,419 -

RFQ

IPU04N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 4.3mOhm @ 50A, 10V 2V @ 70µA 40 nC @ 5 V ±20V 5200 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU05N03LA

IPU05N03LA

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies
3,634 -

RFQ

IPU05N03LA

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.3mOhm @ 30A, 10V 2V @ 50µA 25 nC @ 5 V ±20V 3110 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU05N03LA G

IPU05N03LA G

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies
2,914 -

RFQ

IPU05N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.3mOhm @ 30A, 10V 2V @ 50µA 25 nC @ 5 V ±20V 3110 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU06N03LB G

IPU06N03LB G

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies
3,670 -

RFQ

IPU06N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.3mOhm @ 50A, 10V 2V @ 40µA 22 nC @ 5 V ±20V 2800 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU09N03LB G

IPU09N03LB G

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies
3,606 -

RFQ

IPU09N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 9.3mOhm @ 50A, 10V 2V @ 20µA 13 nC @ 5 V ±20V 1600 pF @ 15 V - 58W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU10N03LA

IPU10N03LA

MOSFET N-CH 25V 30A TO251-3

Infineon Technologies
3,021 -

RFQ

IPU10N03LA

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 10.4mOhm @ 30A, 10V 2V @ 20µA 11 nC @ 5 V ±20V 1358 pF @ 15 V - 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU10N03LA G

IPU10N03LA G

MOSFET N-CH 25V 30A TO251-3

Infineon Technologies
2,286 -

RFQ

IPU10N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 10.4mOhm @ 30A, 10V 2V @ 20µA 11 nC @ 5 V ±20V 1358 pF @ 15 V - 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU20N03L G

IPU20N03L G

MOSFET N-CH 30V 30A TO251-3

Infineon Technologies
2,365 -

RFQ

IPU20N03L G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 20mOhm @ 15A, 10V 2V @ 25µA 11 nC @ 5 V ±20V 700 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPUH6N03LA G

IPUH6N03LA G

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies
2,970 -

RFQ

IPUH6N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 6.2mOhm @ 50A, 10V 2V @ 30µA 19 nC @ 5 V ±20V 2390 pF @ 15 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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