Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP05N03LB G

IPP05N03LB G

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies
2,366 -

RFQ

IPP05N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 5.3mOhm @ 60A, 10V 2V @ 40µA 25 nC @ 5 V ±20V 3209 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP065N06LGAKSA1

IPP065N06LGAKSA1

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies
2,493 -

RFQ

IPP065N06LGAKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 6.5mOhm @ 80A, 10V 2V @ 180µA 157 nC @ 10 V ±20V 5100 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP06CN10N G

IPP06CN10N G

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
3,368 -

RFQ

IPP06CN10N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 6.5mOhm @ 100A, 10V 4V @ 180µA 139 nC @ 10 V ±20V 9200 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP06CNE8N G

IPP06CNE8N G

MOSFET N-CH 85V 100A TO220-3

Infineon Technologies
3,360 -

RFQ

IPP06CNE8N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 100A (Tc) 10V 6.5mOhm @ 100A, 10V 4V @ 180µA 138 nC @ 10 V ±20V 9240 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP070N06L G

IPP070N06L G

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies
2,696 -

RFQ

IPP070N06L G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 7mOhm @ 80A, 10V 2V @ 150µA 126 nC @ 10 V ±20V 4300 pF @ 30 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP070N06N G

IPP070N06N G

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies
3,401 -

RFQ

IPP070N06N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7mOhm @ 80A, 10V 4V @ 180µA 118 nC @ 10 V ±20V 4100 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP07N03LB G

IPP07N03LB G

MOSFET N-CH 30V 50A TO220-3

Infineon Technologies
2,917 -

RFQ

IPP07N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.6mOhm @ 50A, 10V 2V @ 40µA 25 nC @ 5 V ±20V 2782 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP080N06N G

IPP080N06N G

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies
2,383 -

RFQ

IPP080N06N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 8mOhm @ 80A, 10V 4V @ 150µA 93 nC @ 10 V ±20V 3500 pF @ 30 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP085N06LGAKSA1

IPP085N06LGAKSA1

MOSFET N-CH 60V 80A TO-220

Infineon Technologies
15,000 -

RFQ

IPP085N06LGAKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) - 8.5mOhm @ 80A. 10V 2V @ 125µA 104 nC @ 10 V - 3500 pF @ 30 V - - - Through Hole
IPP08CN10N G

IPP08CN10N G

MOSFET N-CH 100V 95A TO220-3

Infineon Technologies
3,163 -

RFQ

IPP08CN10N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 95A (Tc) 10V 8.5mOhm @ 95A, 10V 4V @ 130µA 100 nC @ 10 V ±20V 6660 pF @ 50 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP08CNE8N G

IPP08CNE8N G

MOSFET N-CH 85V 95A TO220-3

Infineon Technologies
2,667 -

RFQ

IPP08CNE8N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 95A (Tc) 10V 6.4mOhm @ 95A, 10V 4V @ 130µA 99 nC @ 10 V ±20V 6690 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP100N06S3-03

IPP100N06S3-03

MOSFET N-CH 55V 100A TO220-3

Infineon Technologies
3,845 -

RFQ

IPP100N06S3-03

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 3.3mOhm @ 80A, 10V 4V @ 230µA 480 nC @ 10 V ±20V 21620 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP100N06S3-04

IPP100N06S3-04

MOSFET N-CH 55V 100A TO220-3

Infineon Technologies
3,225 -

RFQ

IPP100N06S3-04

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 4.4mOhm @ 80A, 10V 4V @ 150µA 314 nC @ 10 V ±20V 14230 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP100N06S3L-03

IPP100N06S3L-03

MOSFET N-CH 55V 100A TO220-3

Infineon Technologies
2,589 -

RFQ

IPP100N06S3L-03

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 5V, 10V 3mOhm @ 80A, 10V 2.2V @ 230µA 550 nC @ 10 V ±16V 26240 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP100N06S3L-04

IPP100N06S3L-04

MOSFET N-CH 55V 100A TO220-3

Infineon Technologies
3,271 -

RFQ

IPP100N06S3L-04

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 5V, 10V 3.8mOhm @ 80A, 10V 2.2V @ 150µA 362 nC @ 10 V ±16V 17270 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP10N03LB G

IPP10N03LB G

MOSFET N-CH 30V 50A TO220-3

Infineon Technologies
2,588 -

RFQ

IPP10N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 9.9mOhm @ 50A, 10V 2V @ 20µA 13 nC @ 5 V ±20V 1639 pF @ 15 V - 58W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP11N03LA

IPP11N03LA

MOSFET N-CH 25V 30A TO220-3

Infineon Technologies
3,128 -

RFQ

IPP11N03LA

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 11.5mOhm @ 30A, 10V 2V @ 20µA 11 nC @ 5 V ±20V 1358 pF @ 15 V - 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP120N06NGAKSA1

IPP120N06NGAKSA1

MOSFET N-CH 60V 75A TO220-3

Infineon Technologies
3,877 -

RFQ

IPP120N06NGAKSA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 94µA 62 nC @ 10 V ±20V 2100 pF @ 30 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP12CN10N G

IPP12CN10N G

MOSFET N-CH 100V 67A TO220-3

Infineon Technologies
4,000 -

RFQ

IPP12CN10N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 67A (Tc) 10V 12.9mOhm @ 67A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4320 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP12CNE8N G

IPP12CNE8N G

MOSFET N-CH 85V 67A TO220-3

Infineon Technologies
2,367 -

RFQ

IPP12CNE8N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 67A (Tc) 10V 12.9mOhm @ 67A, 10V 4V @ 83µA 64 nC @ 10 V ±20V 4340 pF @ 40 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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