Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP13N03LB G

IPP13N03LB G

MOSFET N-CH 30V 30A TO220-3

Infineon Technologies
3,836 -

RFQ

IPP13N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 12.8mOhm @ 30A, 10V 2V @ 20µA 10 nC @ 5 V ±20V 1355 pF @ 15 V - 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP16CNE8N G

IPP16CNE8N G

MOSFET N-CH 85V 53A TO220-3

Infineon Technologies
2,080 -

RFQ

IPP16CNE8N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 53A (Tc) 10V 16.5mOhm @ 53A, 10V 4V @ 61µA 48 nC @ 10 V ±20V 3230 pF @ 40 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP21N03L G

IPP21N03L G

MOSFET N-CH TO-220

Infineon Technologies
2,890 -

RFQ

IPP21N03L G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) - - - - - - - - - - - Through Hole
IPP25N06S325XK

IPP25N06S325XK

MOSFET N-CH 55V 25A TO220-3

Infineon Technologies
2,210 -

RFQ

IPP25N06S325XK

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 25A (Tc) 10V 25.1mOhm @ 15A, 10V 4V @ 20µA 41 nC @ 10 V ±20V 1862 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB100N12S305ATMA1

IPB100N12S305ATMA1

MOSFET N-CH 120V 100A TO263-3

Infineon Technologies
2,062 -

RFQ

IPB100N12S305ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 100A (Tc) 10V 5.1mOhm @ 100A, 10V 4V @ 240µA 185 nC @ 10 V ±20V 11570 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP25N06S3L-22

IPP25N06S3L-22

MOSFET N-CH 55V 25A TO220-3

Infineon Technologies
2,380 -

RFQ

IPP25N06S3L-22

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 25A (Tc) 5V, 10V 21.6mOhm @ 17A, 10V 2.2V @ 20µA 47 nC @ 10 V ±16V 2260 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISC022N10NM6ATMA1

ISC022N10NM6ATMA1

TRENCH >=100V PG-TSON-8

Infineon Technologies
3,645 -

RFQ

ISC022N10NM6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Ta), 230A (Tc) 8V, 10V 2.24mOhm @ 50A, 10V 3.3V @ 147µA 91 nC @ 10 V ±20V 6880 pF @ 50 V - 3W (Ta), 254W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB4620PBF

IRFB4620PBF

MOSFET N-CH 200V 25A TO220AB

Infineon Technologies
3,671 -

RFQ

IRFB4620PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 25A (Tc) 10V 72.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB015N04LGATMA1

IPB015N04LGATMA1

MOSFET N-CH 40V 120A D2PAK

Infineon Technologies
2,571 -

RFQ

IPB015N04LGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.5mOhm @ 100A, 10V 2V @ 200µA 346 nC @ 10 V ±20V 28000 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUS200N08S5N023ATMA1

IAUS200N08S5N023ATMA1

MOSFET N-CH 80V 200A HSOG-8

Infineon Technologies
2,810 -

RFQ

IAUS200N08S5N023ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 200A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 130µA 110 nC @ 10 V ±20V 7670 pF @ 40 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB3207PBF

IRFB3207PBF

MOSFET N-CH 75V 170A TO220AB

Infineon Technologies
2,300 -

RFQ

IRFB3207PBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 170A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP26CN10NGHKSA1

IPP26CN10NGHKSA1

MOSFET N-CH 100V 35A TO220-3

Infineon Technologies
3,270 -

RFQ

IPP26CN10NGHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 26mOhm @ 35A, 10V 4V @ 39µA 31 nC @ 10 V ±20V 2070 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP26CNE8N G

IPP26CNE8N G

MOSFET N-CH 85V 35A TO220-3

Infineon Technologies
3,210 -

RFQ

IPP26CNE8N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 35A (Tc) 10V 26mOhm @ 35A, 10V 4V @ 39µA 31 nC @ 10 V ±20V 2070 pF @ 40 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP45N06S3-16

IPP45N06S3-16

MOSFET N-CH 55V 45A TO220-3

Infineon Technologies
2,238 -

RFQ

IPP45N06S3-16

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 45A (Tc) 10V 15.7mOhm @ 23A, 10V 4V @ 30µA 57 nC @ 10 V ±20V 2980 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP45N06S3L-13

IPP45N06S3L-13

MOSFET N-CH 55V 45A TO220-3

Infineon Technologies
3,562 -

RFQ

IPP45N06S3L-13

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 45A (Tc) 5V, 10V 13.4mOhm @ 26A, 10V 2.2V @ 30µA 75 nC @ 10 V ±16V 3600 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP50CN10NGXKSA1

IPP50CN10NGXKSA1

MOSFET N-CH 100V 20A TO220-3

Infineon Technologies
3,095 -

RFQ

IPP50CN10NGXKSA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 50mOhm @ 20A, 10V 4V @ 20µA 16 nC @ 10 V ±20V 1090 pF @ 50 V - 44W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP77N06S3-09

IPP77N06S3-09

MOSFET N-CH 55V 77A TO220-3

Infineon Technologies
2,791 -

RFQ

IPP77N06S3-09

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 77A (Tc) 10V 9.1mOhm @ 39A, 10V 4V @ 55µA 103 nC @ 10 V ±20V 5335 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80CN10NGHKSA1

IPP80CN10NGHKSA1

MOSFET N-CH 100V 13A TO220-3

Infineon Technologies
2,669 -

RFQ

IPP80CN10NGHKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 80mOhm @ 13A, 10V 4V @ 12µA 11 nC @ 10 V ±20V 716 pF @ 50 V - 31W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S3-05

IPP80N06S3-05

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
2,972 -

RFQ

IPP80N06S3-05

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.4mOhm @ 63A, 10V 4V @ 110µA 240 nC @ 10 V ±20V 10760 pF @ 25 V - 165W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S3-07

IPP80N06S3-07

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
2,853 -

RFQ

IPP80N06S3-07

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.8mOhm @ 51A, 10V 4V @ 80µA 170 nC @ 10 V ±20V 7768 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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