Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI80N06S3L-05

IPI80N06S3L-05

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
472 -

RFQ

IPI80N06S3L-05

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 4.8mOhm @ 69A, 10V 2.2V @ 115µA 273 nC @ 10 V ±16V 13060 pF @ 25 V - 165W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S3L06XK

IPI80N06S3L06XK

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
3,980 -

RFQ

IPI80N06S3L06XK

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 5.9mOhm @ 56A, 10V 2.2V @ 80µA 196 nC @ 10 V ±16V 9417 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S3L-08

IPI80N06S3L-08

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
780 -

RFQ

IPI80N06S3L-08

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 7.9mOhm @ 43A, 10V 2.2V @ 55µA 134 nC @ 10 V ±16V 6475 pF @ 25 V - 105W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLS3034TRL7PP

IRLS3034TRL7PP

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
3,857 -

RFQ

IRLS3034TRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 4.5V, 10V 1.4mOhm @ 200A, 10V 2.5V @ 250µA 180 nC @ 4.5 V ±20V 10990 pF @ 40 V - 380W (Tc) - Surface Mount
IPB180P04P403ATMA2

IPB180P04P403ATMA2

MOSFET P-CH 40V 180A TO263-7

Infineon Technologies
3,815 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) - 2.8mOhm @ 100A, 10V 4V @ 410µA 250 nC @ 10 V ±20V 17640 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP50R190CEXKSA1

IPP50R190CEXKSA1

MOSFET N-CH 500V 18.5A TO220-3

Infineon Technologies
2,073 -

RFQ

IPP50R190CEXKSA1

Ficha técnica

Tube CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 18.5A (Tc) 13V 190mOhm @ 6.2A, 13V 3.5V @ 510µA 47.2 nC @ 10 V ±20V 1137 pF @ 100 V - 127W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB4610PBF

IRFB4610PBF

MOSFET N-CH 100V 73A TO220AB

Infineon Technologies
3,189 -

RFQ

IRFB4610PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS7430TRL7PP

IRFS7430TRL7PP

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
3,500 -

RFQ

IRFS7430TRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 6V, 10V 0.75mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4410TRLPBF

IRFS4410TRLPBF

MOSFET N-CH 100V 88A D2PAK

Infineon Technologies
2,858 -

RFQ

IRFS4410TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 88A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB3307ZPBF

IRFB3307ZPBF

MOSFET N-CH 75V 120A TO220AB

Infineon Technologies
3,789 -

RFQ

IRFB3307ZPBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 5.8mOhm @ 75A, 10V 4V @ 150µA 110 nC @ 10 V ±20V 4750 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2907ZSTRLPBF

IRF2907ZSTRLPBF

MOSFET N-CH 75V 160A D2PAK

Infineon Technologies
2,373 -

RFQ

IRF2907ZSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 160A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB7534PBF

IRFB7534PBF

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies
3,602 -

RFQ

IRFB7534PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.7V @ 250µA 279 nC @ 10 V ±20V 10034 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R280C6XKSA1

IPP60R280C6XKSA1

MOSFET N-CH 600V 13.8A TO220-3

Infineon Technologies
2,944 -

RFQ

IPP60R280C6XKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPB17N80C3ATMA1

SPB17N80C3ATMA1

MOSFET N-CH 800V 17A TO263-3

Infineon Technologies
2,945 -

RFQ

SPB17N80C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 11A, 10V 3.9V @ 1mA 177 nC @ 10 V ±20V 2300 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB52N15DPBF

IRFB52N15DPBF

MOSFET N-CH 150V 51A TO220AB

Infineon Technologies
748 -

RFQ

IRFB52N15DPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 51A (Tc) 10V 32mOhm @ 36A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2770 pF @ 25 V - 3.8W (Ta), 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP03N03LB G

IPP03N03LB G

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies
2,528 -

RFQ

IPP03N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.1mOhm @ 55A, 10V 2V @ 100µA 59 nC @ 5 V ±20V 7624 pF @ 15 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP048N06L G

IPP048N06L G

MOSFET N-CH 60V 100A TO220-3

Infineon Technologies
2,701 -

RFQ

IPP048N06L G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 4.7mOhm @ 100A, 10V 2V @ 270µA 225 nC @ 10 V ±20V 7600 pF @ 30 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP04N03LB G

IPP04N03LB G

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies
3,923 -

RFQ

IPP04N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.8mOhm @ 55A, 10V 2V @ 70µA 40 nC @ 5 V ±20V 5203 pF @ 15 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP050N06N G

IPP050N06N G

MOSFET N-CH 60V 100A TO220-3

Infineon Technologies
3,509 -

RFQ

IPP050N06N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 5mOhm @ 100A, 10V 4V @ 270µA 167 nC @ 10 V ±20V 6100 pF @ 30 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP054NE8NGHKSA2

IPP054NE8NGHKSA2

MOSFET N-CH 85V 100A TO220-3

Infineon Technologies
3,779 -

RFQ

IPP054NE8NGHKSA2

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 100A (Tc) 10V 5.4mOhm @ 100A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 12100 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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