Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP80N06S3L-05

IPP80N06S3L-05

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
3,347 -

RFQ

IPP80N06S3L-05

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 4.8mOhm @ 69A, 10V 2.2V @ 115µA 273 nC @ 10 V ±16V 13060 pF @ 25 V - 165W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S3L-06

IPP80N06S3L-06

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
2,178 -

RFQ

IPP80N06S3L-06

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 5.9mOhm @ 56A, 10V 2.2V @ 80µA 196 nC @ 10 V ±16V 9417 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S3L-08

IPP80N06S3L-08

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
2,847 -

RFQ

IPP80N06S3L-08

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 7.9mOhm @ 43A, 10V 2.2V @ 55µA 134 nC @ 10 V ±16V 6475 pF @ 25 V - 105W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS03N03LA G

IPS03N03LA G

MOSFET N-CH 25V 90A TO251-3

Infineon Technologies
3,702 -

RFQ

IPS03N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 90A (Tc) 4.5V, 10V 3.4mOhm @ 60A, 10V 2V @ 70µA 41 nC @ 5 V ±20V 5200 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS03N03LB G

IPS03N03LB G

MOSFET N-CH 30V 90A TO251-3

Infineon Technologies
3,968 -

RFQ

IPS03N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 3.5mOhm @ 60A, 10V 2V @ 70µA 40 nC @ 5 V ±20V 5200 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS04N03LA G

IPS04N03LA G

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies
2,735 -

RFQ

IPS04N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 80µA 41 nC @ 5 V ±20V 5199 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS04N03LB G

IPS04N03LB G

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies
3,772 -

RFQ

IPS04N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 4.3mOhm @ 50A, 10V 2V @ 70µA 40 nC @ 5 V ±20V 5200 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS05N03LA G

IPS05N03LA G

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies
2,656 -

RFQ

IPS05N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.3mOhm @ 30A, 10V 2V @ 50µA 25 nC @ 5 V ±20V 3110 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS05N03LB G

IPS05N03LB G

MOSFET N-CH 30V 90A TO251-3

Infineon Technologies
3,963 -

RFQ

IPS05N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 5mOhm @ 60A, 10V 2V @ 40µA 25 nC @ 5 V ±20V 3200 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS06N03LA G

IPS06N03LA G

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies
3,846 -

RFQ

IPS06N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.9mOhm @ 30A, 10V 2V @ 40µA 22 nC @ 5 V ±20V 2653 pF @ 15 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS06N03LZ G

IPS06N03LZ G

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies
3,341 -

RFQ

IPS06N03LZ G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.9mOhm @ 30A, 10V 2V @ 40µA 22 nC @ 5 V ±20V 2653 pF @ 15 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS09N03LA G

IPS09N03LA G

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies
3,168 -

RFQ

IPS09N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 8.8mOhm @ 30A, 10V 2V @ 20µA 13 nC @ 5 V ±20V 1642 pF @ 15 V - 63W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS09N03LB G

IPS09N03LB G

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies
3,817 -

RFQ

IPS09N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 9.3mOhm @ 50A, 10V 2V @ 20µA 13 nC @ 5 V ±20V 1600 pF @ 15 V - 58W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS10N03LA G

IPS10N03LA G

MOSFET N-CH 25V 30A TO251-3

Infineon Technologies
3,579 -

RFQ

IPS10N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 10.4mOhm @ 30A, 10V 2V @ 20µA 11 nC @ 5 V ±20V 1358 pF @ 15 V - 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS13N03LA G

IPS13N03LA G

MOSFET N-CH 25V 30A TO251-3

Infineon Technologies
2,447 -

RFQ

IPS13N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 12.8mOhm @ 30A, 10V 2V @ 20µA 8.3 nC @ 5 V ±20V 1043 pF @ 15 V - 46W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS20N03L G

IPS20N03L G

MOSFET N-CH 30V 30A TO251-3

Infineon Technologies
3,498 -

RFQ

IPS20N03L G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - - - - - - - - - Through Hole
IPSH4N03LA G

IPSH4N03LA G

MOSFET N-CH 25V 90A TO251-3

Infineon Technologies
2,147 -

RFQ

IPSH4N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 90A (Tc) 4.5V, 10V 4.4mOhm @ 60A, 10V 2V @ 40µA 26 nC @ 5 V ±20V 3200 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPSH5N03LA G

IPSH5N03LA G

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies
2,241 -

RFQ

IPSH5N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.4mOhm @ 50A, 10V 2V @ 35µA 22 nC @ 5 V ±20V 2653 pF @ 15 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPSH6N03LA G

IPSH6N03LA G

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies
2,766 -

RFQ

IPSH6N03LA G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 6.2mOhm @ 50A, 10V 2V @ 30µA 19 nC @ 5 V ±20V 2390 pF @ 15 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPSH6N03LB G

IPSH6N03LB G

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies
3,105 -

RFQ

IPSH6N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.3mOhm @ 50A, 10V 2V @ 40µA 22 nC @ 5 V ±20V 2800 pF @ 15 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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