Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPUH6N03LB G

IPUH6N03LB G

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies
3,756 -

RFQ

IPUH6N03LB G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.3mOhm @ 50A, 10V 2V @ 40µA 22 nC @ 5 V ±20V 2800 pF @ 15 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R299CPFKSA1

IPW60R299CPFKSA1

MOSFET N-CH 600V 11A TO247-3

Infineon Technologies
3,868 -

RFQ

IPW60R299CPFKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIPC06N60C3

SIPC06N60C3

MOSFET COOL MOS 600V SAWED WAFER

Infineon Technologies
2,071 -

RFQ

SIPC06N60C3

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
SIPC26N80C3

SIPC26N80C3

MOSFET COOL MOS 600V SAWED WAFER

Infineon Technologies
2,750 -

RFQ

SIPC26N80C3

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
SIPC69N50C3X1SA2

SIPC69N50C3X1SA2

MOSFET COOL MOS SAWED WAFER

Infineon Technologies
3,540 -

RFQ

SIPC69N50C3X1SA2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SIPC69N60CFD

SIPC69N60CFD

MOSFET COOL MOS SAWED WAFER

Infineon Technologies
3,449 -

RFQ

SIPC69N60CFD

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
SN7002N E6327

SN7002N E6327

MOSFET N-CH 60V 200MA SOT23-3

Infineon Technologies
2,625 -

RFQ

SN7002N E6327

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SN7002N E6433

SN7002N E6433

MOSFET N-CH 60V 200MA SOT23-3

Infineon Technologies
2,780 -

RFQ

SN7002N E6433

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SN7002W E6433

SN7002W E6433

MOSFET N-CH 60V 230MA SOT323-3

Infineon Technologies
2,022 -

RFQ

SN7002W E6433

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 230mA (Ta) 4.5V, 10V 5Ohm @ 230mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPB08P06P

SPB08P06P

MOSFET P-CH 60V 8.8A TO263-3

Infineon Technologies
3,770 -

RFQ

SPB08P06P

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Ta) 10V 300mOhm @ 6.2A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 420 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB100N03S2-03 G

SPB100N03S2-03 G

MOSFET N-CH 30V 100A TO263-3

Infineon Technologies
2,783 -

RFQ

SPB100N03S2-03 G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 3mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7020 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB100N03S2L-03 G

SPB100N03S2L-03 G

MOSFET N-CH 30V 100A TO263-3

Infineon Technologies
2,605 -

RFQ

SPB100N03S2L-03 G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 2.7mOhm @ 80A, 10V 2V @ 250µA 220 nC @ 10 V ±20V 8180 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB100N04S2-04

SPB100N04S2-04

MOSFET N-CH 40V 100A TO263-3

Infineon Technologies
433 -

RFQ

SPB100N04S2-04

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.3mOhm @ 80A, 10V 4V @ 250µA 172 nC @ 10 V ±20V 7220 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB100N04S2L-03

SPB100N04S2L-03

MOSFET N-CH 40V 100A TO263-3

Infineon Technologies
2,677 -

RFQ

SPB100N04S2L-03

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 3mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 8000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB100N06S2-05

SPB100N06S2-05

MOSFET N-CH 55V 100A TO263-3

Infineon Technologies
1,000 -

RFQ

SPB100N06S2-05

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 4.7mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 6800 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB100N06S2L-05

SPB100N06S2L-05

MOSFET N-CH 55V 100A TO263-3

Infineon Technologies
3,569 -

RFQ

SPB100N06S2L-05

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 4.4mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 7530 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB100N08S2-07

SPB100N08S2-07

MOSFET N-CH 75V 100A TO263-3

Infineon Technologies
3,815 -

RFQ

SPB100N08S2-07

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 6.8mOhm @ 66A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 6020 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB100N08S2L-07

SPB100N08S2L-07

MOSFET N-CH 75V 100A TO263-3

Infineon Technologies
2,366 -

RFQ

SPB100N08S2L-07

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 68A, 10V 2V @ 250µA 246 nC @ 10 V ±20V 7130 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB10N10

SPB10N10

MOSFET N-CH 100V 10.3A TO263-3

Infineon Technologies
2,385 -

RFQ

SPB10N10

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10.3A (Tc) 10V 170mOhm @ 7.8A, 10V 4V @ 21µA 19.4 nC @ 10 V ±20V 426 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB10N10 G

SPB10N10 G

MOSFET N-CH 100V 10.3A TO263-3

Infineon Technologies
2,827 -

RFQ

SPB10N10 G

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10.3A (Tc) 10V 170mOhm @ 7.8A, 10V 4V @ 21µA 19.4 nC @ 10 V ±20V 426 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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