Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB60R060P7ATMA1

IPB60R060P7ATMA1

MOSFET N-CH 650V 48A D2PAK

Infineon Technologies
3,852 -

RFQ

IPB60R060P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 48A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 67 nC @ 10 V ±20V 2895 pF @ 400 V - 164W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPB80N06S2L-05

SPB80N06S2L-05

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,454 -

RFQ

SPB80N06S2L-05

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 4.5mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 7530 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N06S2L-06

SPB80N06S2L-06

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,222 -

RFQ

SPB80N06S2L-06

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 6.3mOhm @ 69A, 10V 2V @ 180µA 150 nC @ 10 V ±20V 5050 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N06S2L-07

SPB80N06S2L-07

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
3,749 -

RFQ

SPB80N06S2L-07

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 2V @ 150µA 130 nC @ 10 V ±20V 4210 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N06S2L-09

SPB80N06S2L-09

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,078 -

RFQ

SPB80N06S2L-09

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 8.5mOhm @ 52A, 10V 2V @ 125µA 105 nC @ 10 V ±20V 3480 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N06S2L-11

SPB80N06S2L-11

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
3,144 -

RFQ

SPB80N06S2L-11

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 11mOhm @ 40A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2650 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N06S2L-H5

SPB80N06S2L-H5

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
3,486 -

RFQ

SPB80N06S2L-H5

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 5mOhm @ 80A, 10V 2V @ 230µA 190 nC @ 10 V ±20V 6640 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N08S2-07

SPB80N08S2-07

MOSFET N-CH 75V 80A TO263-3

Infineon Technologies
3,996 -

RFQ

SPB80N08S2-07

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 7.1mOhm @ 66A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 6130 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N08S2L-07

SPB80N08S2L-07

MOSFET N-CH 75V 80A TO263-3

Infineon Technologies
3,522 -

RFQ

SPB80N08S2L-07

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 4.5V, 10V 6.8mOhm @ 67A, 10V 2V @ 250µA 233 nC @ 10 V ±20V 6820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80N10L

SPB80N10L

MOSFET N-CH 100V 80A TO263-3

Infineon Technologies
3,623 -

RFQ

SPB80N10L

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 4.5V, 10V 14mOhm @ 58A, 10V 2V @ 2mA 240 nC @ 10 V ±20V 4540 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB80P06P

SPB80P06P

MOSFET P-CH 60V 80A TO263-3

Infineon Technologies
3,550 -

RFQ

SPB80P06P

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 23mOhm @ 64A, 10V 4V @ 5.5mA 173 nC @ 10 V ±20V 5033 pF @ 25 V - 340W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD08P06P

SPD08P06P

MOSFET P-CH 60V 8.83A TO252-3

Infineon Technologies
2,880 -

RFQ

SPD08P06P

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 8.83A (Ta) - 300mOhm @ 6.2A, 10V 4V @ 250µA 13 nC @ 10 V - 420 pF @ 25 V - 42W (Tc) - Surface Mount
SPD14N06S2-80

SPD14N06S2-80

MOSFET N-CH 55V 17A TO252-3

Infineon Technologies
3,751 -

RFQ

SPD14N06S2-80

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 80mOhm @ 7A, 10V 4V @ 14µA 10 nC @ 10 V ±20V 400 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD15N06S2L-64

SPD15N06S2L-64

MOSFET N-CH 55V 19A TO252-3

Infineon Technologies
2,116 -

RFQ

SPD15N06S2L-64

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 4.5V, 10V 64mOhm @ 8A, 10V 2V @ 14µA 13 nC @ 10 V ±20V 445 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD22N08S2L-50

SPD22N08S2L-50

MOSFET N-CH 75V 25A TO252-3

Infineon Technologies
3,326 -

RFQ

SPD22N08S2L-50

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 25A (Tc) 4.5V, 10V 50mOhm @ 11A, 10V 2V @ 31µA 33 nC @ 10 V ±20V 850 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPN04N60S5

SPN04N60S5

MOSFET N-CH 600V 800MA SOT223-4

Infineon Technologies
2,281 -

RFQ

SPN04N60S5

Ficha técnica

Tape & Reel (TR) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 800mA (Ta) 10V 950mOhm @ 2.8A, 10V 5.5V @ 200µA 17 nC @ 10 V ±20V 600 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPP02N60S5HKSA1

SPP02N60S5HKSA1

MOSFET N-CH 600V 1.8A TO220-3

Infineon Technologies
3,427 -

RFQ

SPP02N60S5HKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 5.5V @ 80µA 9.5 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP04N60S5BKSA1

SPP04N60S5BKSA1

MOSFET N-CH 600V 4.5A TO220-3

Infineon Technologies
2,291 -

RFQ

SPP04N60S5BKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 5.5V @ 200µA 22.9 nC @ 10 V ±20V 580 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP06N60C3HKSA1

SPP06N60C3HKSA1

MOSFET N-CH 650V 6.2A TO220-3

Infineon Technologies
3,176 -

RFQ

SPP06N60C3HKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6.2A (Tc) 10V 750mOhm @ 3.9A, 10V 3.9V @ 260µA 31 nC @ 10 V ±20V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSP170PL6327HTSA1

BSP170PL6327HTSA1

MOSFET P-CH 60V 1.9A SOT223-4

Infineon Technologies
3,007 -

RFQ

BSP170PL6327HTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.9A (Ta) 10V 300mOhm @ 1.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 410 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
Total 8399 Record«Prev1... 123124125126127128129130...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário