Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL3302STRR

IRL3302STRR

MOSFET N-CH 20V 39A D2PAK

Infineon Technologies
3,019 -

RFQ

IRL3302STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 39A (Tc) 4.5V, 7V 20mOhm @ 23A, 7V 700mV @ 250µA (Min) 31 nC @ 4.5 V ±10V 1300 pF @ 15 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3303D1

IRL3303D1

MOSFET N-CH 30V 38A TO220AB

Infineon Technologies
3,766 -

RFQ

IRL3303D1

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3303D1S

IRL3303D1S

MOSFET N-CH 30V 38A D2PAK

Infineon Technologies
3,771 -

RFQ

IRL3303D1S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3303D1STRL

IRL3303D1STRL

MOSFET N-CH 30V 38A D2PAK

Infineon Technologies
3,556 -

RFQ

IRL3303D1STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3303STRL

IRL3303STRL

MOSFET N-CH 30V 38A D2PAK

Infineon Technologies
3,669 -

RFQ

IRL3303STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3303STRR

IRL3303STRR

MOSFET N-CH 30V 38A D2PAK

Infineon Technologies
2,943 -

RFQ

IRL3303STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3402STRL

IRL3402STRL

MOSFET N-CH 20V 85A D2PAK

Infineon Technologies
3,712 -

RFQ

IRL3402STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 85A (Tc) 4.5V, 7V 8mOhm @ 51A, 7V 700mV @ 250µA (Min) 78 nC @ 4.5 V ±10V 3300 pF @ 15 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3402STRR

IRL3402STRR

MOSFET N-CH 20V 85A D2PAK

Infineon Technologies
3,436 -

RFQ

IRL3402STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 85A (Tc) 4.5V, 7V 8mOhm @ 51A, 7V 700mV @ 250µA (Min) 78 nC @ 4.5 V ±10V 3300 pF @ 15 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3502STRR

IRL3502STRR

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies
3,912 -

RFQ

IRL3502STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 7V 7mOhm @ 64A, 7V 700mV @ 250µA (Min) 110 nC @ 4.5 V ±10V 4700 pF @ 15 V - 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3705NSTRR

IRL3705NSTRR

MOSFET N-CH 55V 89A D2PAK

Infineon Technologies
3,428 -

RFQ

IRL3705NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 89A (Tc) 4V, 10V 10mOhm @ 46A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3803STRR

IRL3803STRR

MOSFET N-CH 30V 140A D2PAK

Infineon Technologies
3,405 -

RFQ

IRL3803STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL520NSTRR

IRL520NSTRR

MOSFET N-CH 100V 10A D2PAK

Infineon Technologies
2,523 -

RFQ

IRL520NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL540NSTRR

IRL540NSTRR

MOSFET N-CH 100V 36A D2PAK

Infineon Technologies
2,228 -

RFQ

IRL540NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4V, 10V 44mOhm @ 18A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL5602L

IRL5602L

MOSFET P-CH 20V 24A TO262

Infineon Technologies
2,086 -

RFQ

IRL5602L

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 2.5V, 4.5V 42mOhm @ 12A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±8V 1460 pF @ 15 V - - - Through Hole
IRL5602

IRL5602

MOSFET P-CH 20V 24A TO220AB

Infineon Technologies
3,821 -

RFQ

IRL5602

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 2.5V, 4.5V 42mOhm @ 12A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±8V 1460 pF @ 15 V - - - Through Hole
IRL5602STRL

IRL5602STRL

MOSFET P-CH 20V 24A D2PAK

Infineon Technologies
2,846 -

RFQ

IRL5602STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 2.5V, 4.5V 42mOhm @ 12A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±8V 1460 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL5602STRR

IRL5602STRR

MOSFET P-CH 20V 24A D2PAK

Infineon Technologies
2,766 -

RFQ

IRL5602STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 2.5V, 4.5V 42mOhm @ 12A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±8V 1460 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLI2910

IRLI2910

MOSFET N-CH 100V 31A TO220AB FP

Infineon Technologies
3,440 -

RFQ

IRLI2910

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 4V, 10V 26mOhm @ 16A, 10V 2V @ 250µA 140 nC @ 5 V ±16V 3700 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLL2703TR

IRLL2703TR

MOSFET N-CH 30V 3.9A SOT223

Infineon Technologies
2,665 -

RFQ

IRLL2703TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 3.9A (Ta) 4V, 10V 45mOhm @ 3.9A, 10V 2.4V @ 250µA 14 nC @ 5 V ±16V 530 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR014NTRL

IRLR014NTRL

MOSFET N-CH 55V 10A DPAK

Infineon Technologies
2,334 -

RFQ

IRLR014NTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 10A (Tc) 4.5V, 10V 140mOhm @ 6A, 10V 1V @ 250µA 7.9 nC @ 5 V ±16V 265 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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