Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR3714

IRLR3714

MOSFET N-CH 20V 36A DPAK

Infineon Technologies
3,208 -

RFQ

IRLR3714

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3708

IRFR3708

MOSFET N-CH 30V 61A DPAK

Infineon Technologies
3,812 -

RFQ

IRFR3708

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 2.8V, 10V 12.5mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7701

IRF7701

MOSFET P-CH 12V 10A 8TSSOP

Infineon Technologies
3,438 -

RFQ

IRF7701

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 10A (Tc) 1.8V, 4.5V 11mOhm @ 10A, 4.5V 1.2V @ 250µA 100 nC @ 4.5 V ±8V 5050 pF @ 10 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7809AV

IRF7809AV

MOSFET N-CH 30V 13.3A 8SO

Infineon Technologies
2,443 -

RFQ

IRF7809AV

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.3A (Ta) 4.5V 9mOhm @ 15A, 4.5V 1V @ 250µA 62 nC @ 5 V ±12V 3780 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP16CN10NGXKSA1

IPP16CN10NGXKSA1

MOSFET N-CH 100V 53A TO220-3

Infineon Technologies
134 -

RFQ

IPP16CN10NGXKSA1

Ficha técnica

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 53A (Tc) 10V 16.5mOhm @ 53A, 10V 4V @ 61µA 48 nC @ 10 V ±20V 3220 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB42N20D

IRFB42N20D

MOSFET N-CH 200V 44A TO220AB

Infineon Technologies
3,250 -

RFQ

IRFB42N20D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 44A (Tc) 10V 55mOhm @ 26A, 10V 5.5V @ 250µA 140 nC @ 10 V ±30V 3430 pF @ 25 V - 2.4W (Ta), 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7726TR

IRF7726TR

MOSFET P-CH 30V 7A MICRO8

Infineon Technologies
2,789 -

RFQ

IRF7726TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 26mOhm @ 7A, 10V 2.5V @ 250µA 69 nC @ 10 V ±20V 2204 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF6100

IRF6100

MOSFET P-CH 20V 5.1A 4FLIPFET

Infineon Technologies
2,691 -

RFQ

IRF6100

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.1A (Ta) 2.5V, 4.5V 65mOhm @ 5.1A, 4.5V 1.2V @ 250µA 21 nC @ 5 V ±12V 1230 pF @ 15 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU3708

IRFU3708

MOSFET N-CH 30V 61A IPAK

Infineon Technologies
3,090 -

RFQ

IRFU3708

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 2.8V, 10V 12.5mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44VS

IRFZ44VS

MOSFET N-CH 60V 55A D2PAK

Infineon Technologies
3,377 -

RFQ

IRFZ44VS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V 16.5mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1812 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3706

IRFR3706

MOSFET N-CH 20V 75A DPAK

Infineon Technologies
3,616 -

RFQ

IRFR3706

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 2.8V, 10V 9mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7706

IRF7706

MOSFET P-CH 30V 7A 8TSSOP

Infineon Technologies
2,884 -

RFQ

IRF7706

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 22mOhm @ 7A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2211 pF @ 25 V - 1.51W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7241

IRF7241

MOSFET P-CH 40V 6.2A 8SO

Infineon Technologies
2,260 -

RFQ

IRF7241

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 6.2A (Ta) 4.5V, 10V 41mOhm @ 6.2A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 3220 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU3707

IRFU3707

MOSFET N-CH 30V 61A IPAK

Infineon Technologies
2,217 -

RFQ

IRFU3707

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 13mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP3703

IRFP3703

MOSFET N-CH 30V 210A TO247AC

Infineon Technologies
2,164 -

RFQ

IRFP3703

Ficha técnica

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 210A (Tc) 7V, 10V 2.8mOhm @ 76A, 10V 4V @ 250µA 209 nC @ 10 V ±20V 8250 pF @ 25 V - 3.8W (Ta), 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3706

IRFU3706

MOSFET N-CH 20V 75A IPAK

Infineon Technologies
3,374 -

RFQ

IRFU3706

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 2.8V, 10V 9mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLL1503

IRLL1503

MOSFET N-CH 30V 75A SOT223

Infineon Technologies
2,996 -

RFQ

IRLL1503

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Ta) - 3.3mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V - 5730 pF @ 25 V - - - Through Hole
IRLU3714

IRLU3714

MOSFET N-CH 20V 36A I-PAK

Infineon Technologies
2,857 -

RFQ

IRLU3714

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3715

IRLR3715

MOSFET N-CH 20V 54A DPAK

Infineon Technologies
3,299 -

RFQ

IRLR3715

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU3715

IRLU3715

MOSFET N-CH 20V 54A I-PAK

Infineon Technologies
3,923 -

RFQ

IRLU3715

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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