Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3711S

IRF3711S

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies
3,718 -

RFQ

IRF3711S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3711

IRFR3711

MOSFET N-CH 20V 100A DPAK

Infineon Technologies
2,821 -

RFQ

IRFR3711

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 2.5W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3709L

IRF3709L

MOSFET N-CH 30V 90A TO262

Infineon Technologies
2,949 -

RFQ

IRF3709L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3711

IRF3711

MOSFET N-CH 20V 110A TO220AB

Infineon Technologies
2,285 -

RFQ

IRF3711

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF1407L

IRF1407L

MOSFET N-CH 75V 100A TO262

Infineon Technologies
2,577 -

RFQ

IRF1407L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.8mOhm @ 78A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1407S

IRF1407S

MOSFET N-CH 75V 100A D2PAK

Infineon Technologies
2,029 -

RFQ

IRF1407S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.8mOhm @ 78A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7326D2

IRF7326D2

MOSFET P-CH 30V 3.6A 8SO

Infineon Technologies
2,416 -

RFQ

IRF7326D2

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 100mOhm @ 1.8A, 10V 1V @ 250µA 25 nC @ 10 V ±20V 440 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFBA1404

IRFBA1404

MOSFET N-CH 40V 206A SUPER-220

Infineon Technologies
3,992 -

RFQ

IRFBA1404

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 206A (Ta) 10V 3.7mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 300W (Tc) - Through Hole
IRL3716

IRL3716

MOSFET N-CH 20V 180A TO220AB

Infineon Technologies
2,711 -

RFQ

IRL3716

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 180A (Tc) 4.5V, 10V 4mOhm @ 90A, 10V 3V @ 250µA 79 nC @ 4.5 V ±20V 5090 pF @ 10 V - 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3716S

IRL3716S

MOSFET N-CH 20V 180A D2PAK

Infineon Technologies
3,761 -

RFQ

IRL3716S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 180A (Tc) 4.5V, 10V 4mOhm @ 90A, 10V 3V @ 250µA 79 nC @ 4.5 V ±20V 5090 pF @ 10 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF5802TR

IRF5802TR

MOSFET N-CH 150V 0.9A 6-TSOP

Infineon Technologies
2,070 -

RFQ

IRF5802TR

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 150 V 900mA (Ta) - 1.2Ohm @ 540mA, 10V 5.5V @ 250µA 6.8 nC @ 10 V - 88 pF @ 25 V - - - Surface Mount
IRF5806

IRF5806

MOSFET P-CH 20V 4A MICRO6

Infineon Technologies
3,065 -

RFQ

IRF5806

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 86mOhm @ 4A, 4.5V 1.2V @ 250µA 11.4 nC @ 4.5 V ±20V 594 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL3715

IRL3715

MOSFET N-CH 20V 54A TO220AB

Infineon Technologies
3,115 -

RFQ

IRL3715

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF5803

IRF5803

MOSFET P-CH 40V 3.4A MICRO6

Infineon Technologies
2,380 -

RFQ

IRF5803

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 3.4A (Ta) 4.5V, 10V 112mOhm @ 3.4A, 10V 3V @ 250µA 37 nC @ 10 V ±20V 1110 pF @ 25 V - 2W (Ta) - Surface Mount
IRF5802

IRF5802

MOSFET N-CH 150V 900MA MICRO6

Infineon Technologies
2,555 -

RFQ

IRF5802

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 900mA (Ta) 10V 1.2Ohm @ 540mA, 10V 5.5V @ 250µA 6.8 nC @ 10 V ±30V 88 pF @ 25 V - 2W (Ta) - Surface Mount
IRF5804

IRF5804

MOSFET P-CH 40V 2.5A MICRO6

Infineon Technologies
3,634 -

RFQ

IRF5804

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 2.5A (Ta) 4.5V, 10V 198mOhm @ 2.5A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 680 pF @ 25 V - 2W (Ta) - Surface Mount
IRF5800

IRF5800

MOSFET P-CH 30V 4A MICRO6

Infineon Technologies
2,505 -

RFQ

IRF5800

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4.5V, 10V 85mOhm @ 4A, 10V 1V @ 250µA 17 nC @ 10 V ±20V 535 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU5410

IRFU5410

MOSFET P-CH 100V 13A IPAK

Infineon Technologies
3,623 -

RFQ

IRFU5410

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7807A

IRF7807A

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,601 -

RFQ

IRF7807A

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL3714S

IRL3714S

MOSFET N-CH 20V 36A D2PAK

Infineon Technologies
2,877 -

RFQ

IRL3714S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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