Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR8103TR

IRLR8103TR

MOSFET N-CH 30V 89A DPAK

Infineon Technologies
2,127 -

RFQ

IRLR8103TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 89A (Ta) 4.5V, 10V 7mOhm @ 15A, 10V 2V @ 250µA (Min) 50 nC @ 5 V ±20V - - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR8503TRL

IRLR8503TRL

MOSFET N-CH 30V 44A DPAK

Infineon Technologies
2,089 -

RFQ

IRLR8503TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1650 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR8503TR

IRLR8503TR

MOSFET N-CH 30V 44A DPAK

Infineon Technologies
2,562 -

RFQ

IRLR8503TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1650 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR8503TRR

IRLR8503TRR

MOSFET N-CH 30V 44A DPAK

Infineon Technologies
2,542 -

RFQ

IRLR8503TRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1650 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ24NSTRL

IRLZ24NSTRL

MOSFET N-CH 55V 18A D2PAK

Infineon Technologies
3,533 -

RFQ

IRLZ24NSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ24NSTRR

IRLZ24NSTRR

MOSFET N-CH 55V 18A D2PAK

Infineon Technologies
3,611 -

RFQ

IRLZ24NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4420DYTR

SI4420DYTR

MOSFET N-CH 30V 12.5A 8SO

Infineon Technologies
3,822 -

RFQ

SI4420DYTR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 9mOhm @ 12.5A, 10V 1V @ 250µA 78 nC @ 10 V ±20V 2240 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7521D1TR

IRF7521D1TR

MOSFET N-CH 20V 2.4A MICRO8

Infineon Technologies
3,214 -

RFQ

IRF7521D1TR

Ficha técnica

Tape & Reel (TR) FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) 2.7V, 4.5V 135mOhm @ 1.7A, 4.5V 700mV @ 250µA (Min) 8 nC @ 4.5 V ±12V 260 pF @ 15 V Schottky Diode (Isolated) 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7523D1TR

IRF7523D1TR

MOSFET N-CH 30V 2.7A MICRO8

Infineon Technologies
2,606 -

RFQ

IRF7523D1TR

Ficha técnica

Tape & Reel (TR) FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 2.7A (Ta) 4.5V, 10V 130mOhm @ 1.7A, 10V 1V @ 250µA 12 nC @ 10 V ±20V 210 pF @ 25 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7526D1TR

IRF7526D1TR

MOSFET P-CH 30V 2A MICRO8

Infineon Technologies
3,387 -

RFQ

IRF7526D1TR

Ficha técnica

Tape & Reel (TR) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 200mOhm @ 1.2A, 10V 1V @ 250µA 11 nC @ 10 V ±20V 180 pF @ 25 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR220NTR

IRFR220NTR

MOSFET N-CH 200V 5A DPAK

Infineon Technologies
3,695 -

RFQ

IRFR220NTR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR220NTRL

IRFR220NTRL

MOSFET N-CH 200V 5A DPAK

Infineon Technologies
2,062 -

RFQ

IRFR220NTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU220N

IRFU220N

MOSFET N-CH 200V 5A IPAK

Infineon Technologies
3,900 -

RFQ

IRFU220N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLMS2002TR

IRLMS2002TR

MOSFET N-CH 20V 6.5A 6-TSOP

Infineon Technologies
2,686 -

RFQ

IRLMS2002TR

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) - 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V - 1310 pF @ 15 V - - - Surface Mount
IRFM460

IRFM460

MOSFET N-CH 500V 19A TO254AA

Infineon Technologies
3,938 -

RFQ

IRFM460

Ficha técnica

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 4300 pF @ 25 V - 250W (Tc) - Through Hole
IRF7700

IRF7700

MOSFET P-CH 20V 8.6A 8TSSOP

Infineon Technologies
3,940 -

RFQ

IRF7700

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 8.6A (Tc) 2.5V, 4.5V 15mOhm @ 8.6A, 4.5V 1.2V @ 250µA 89 nC @ 5 V ±12V 4300 pF @ 15 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3205LPBF

IRF3205LPBF

MOSFET N-CH 55V 110A TO262

Infineon Technologies
313 -

RFQ

IRF3205LPBF

Ficha técnica

Tube HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7469

IRF7469

MOSFET N-CH 40V 9A 8SO

Infineon Technologies
2,551 -

RFQ

IRF7469

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 9A (Ta) 4.5V, 10V 17mOhm @ 9A, 10V 3V @ 250µA 23 nC @ 4.5 V ±20V 2000 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF3708L

IRF3708L

MOSFET N-CH 30V 62A TO262

Infineon Technologies
2,612 -

RFQ

IRF3708L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU014N

IRLU014N

MOSFET N-CH 55V 10A I-PAK

Infineon Technologies
3,409 -

RFQ

IRLU014N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 10A (Tc) 4.5V, 10V 140mOhm @ 6A, 10V 1V @ 250µA 7.9 nC @ 5 V ±16V 265 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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