Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL3714L

IRL3714L

MOSFET N-CH 20V 36A TO262

Infineon Technologies
3,975 -

RFQ

IRL3714L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715L

IRL3715L

MOSFET N-CH 20V 54A TO262

Infineon Technologies
3,246 -

RFQ

IRL3715L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715S

IRL3715S

MOSFET N-CH 20V 54A D2PAK

Infineon Technologies
2,304 -

RFQ

IRL3715S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF5805

IRF5805

MOSFET P-CH 30V 3.8A MICRO6

Infineon Technologies
3,782 -

RFQ

IRF5805

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.8A (Ta) 4.5V, 10V 98mOhm @ 3.8A, 10V 2.5V @ 250µA 17 nC @ 10 V ±20V 511 pF @ 25 V - 2W (Ta) - Surface Mount
IRF5803D2

IRF5803D2

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies
3,997 -

RFQ

IRF5803D2

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 3.4A (Ta) 4.5V, 10V 112mOhm @ 3.4A, 10V 3V @ 250µA 37 nC @ 10 V ±20V 1110 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3443DV

SI3443DV

MOSFET P-CH 20V 4.4A MICRO6

Infineon Technologies
2,640 -

RFQ

SI3443DV

Ficha técnica

Bulk HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 2.5V, 4.5V 65mOhm @ 4.4A, 4.5V 1.5V @ 250µA 15 nC @ 4.5 V ±12V 1079 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7425

IRF7425

MOSFET P-CH 20V 15A 8SO

Infineon Technologies
3,211 -

RFQ

IRF7425

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 15A (Ta) 2.5V, 4.5V 8.2mOhm @ 15A, 4.5V 1.2V @ 250µA 130 nC @ 4.5 V ±12V 7980 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7704

IRF7704

MOSFET P-CH 40V 4.6A 8TSSOP

Infineon Technologies
3,029 -

RFQ

IRF7704

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 4.6A (Ta) 4.5V, 10V 46mOhm @ 4.6A, 10V 3V @ 250µA 38 nC @ 4.5 V ±20V 3150 pF @ 25 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU9014N

IRFU9014N

MOSFET P-CH 60V 5.1A IPAK

Infineon Technologies
2,749 -

RFQ

IRFU9014N

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) - Through Hole
IRF7420

IRF7420

MOSFET P-CH 12V 11.5A 8SO

Infineon Technologies
2,658 -

RFQ

IRF7420

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 11.5A (Tc) 1.8V, 4.5V 14mOhm @ 11.5A, 4.5V 900mV @ 250µA 38 nC @ 4.5 V ±8V 3529 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7450

IRF7450

MOSFET N-CH 200V 2.5A 8SO

Infineon Technologies
3,041 -

RFQ

IRF7450

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 2.5A (Ta) 10V 170mOhm @ 1.5A, 10V 5.5V @ 250µA 39 nC @ 10 V ±30V 940 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7433

IRF7433

MOSFET P-CH 12V 8.9A 8SO

Infineon Technologies
3,232 -

RFQ

IRF7433

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 8.9A (Ta) 1.8V, 4.5V 24mOhm @ 8.7A, 4.5V 900mV @ 250µA 20 nC @ 4.5 V ±8V 1877 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7705

IRF7705

MOSFET P-CH 30V 8A 8TSSOP

Infineon Technologies
3,039 -

RFQ

IRF7705

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 18mOhm @ 8A, 10V 2.5V @ 250µA 88 nC @ 10 V ±20V 2774 pF @ 25 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7805A

IRF7805A

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
3,497 -

RFQ

IRF7805A

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7707

IRF7707

MOSFET P-CH 20V 7A 8TSSOP

Infineon Technologies
2,368 -

RFQ

IRF7707

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7A (Ta) 2.5V, 4.5V 22mOhm @ 7A, 4.5V 1.2V @ 250µA 47 nC @ 4.5 V ±12V 2361 pF @ 15 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7703

IRF7703

MOSFET P-CH 40V 6A 8TSSOP

Infineon Technologies
3,349 -

RFQ

IRF7703

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 6A (Ta) 4.5V, 10V 28mOhm @ 6A, 10V 3V @ 250µA 62 nC @ 4.5 V ±20V 5220 pF @ 25 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU2407

IRFU2407

MOSFET N-CH 75V 42A IPAK

Infineon Technologies
3,643 -

RFQ

IRFU2407

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 26mOhm @ 25A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ48VS

IRFZ48VS

MOSFET N-CH 60V 72A D2PAK

Infineon Technologies
2,167 -

RFQ

IRFZ48VS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 72A (Tc) 10V 12mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1985 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7465

IRF7465

MOSFET N-CH 150V 1.9A 8SO

Infineon Technologies
3,907 -

RFQ

IRF7465

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 1.9A (Ta) 10V 280mOhm @ 1.14A, 10V 5.5V @ 250µA 15 nC @ 10 V ±30V 330 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7453

IRF7453

MOSFET N-CH 250V 2.2A 8SO

Infineon Technologies
3,035 -

RFQ

IRF7453

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Ta) 10V 230mOhm @ 1.3A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V 930 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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