Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7477

IRF7477

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
3,451 -

RFQ

IRF7477

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.5mOhm @ 14A, 10V 2.5V @ 250µA 38 nC @ 4.5 V ±20V 2710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU3709

IRFU3709

MOSFET N-CH 30V 90A IPAK

Infineon Technologies
2,398 -

RFQ

IRFU3709

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 4.5 V ±20V 2672 pF @ 16 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3709S

IRF3709S

MOSFET N-CH 30V 90A D2PAK

Infineon Technologies
3,539 -

RFQ

IRF3709S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU3711

IRFU3711

MOSFET N-CH 20V 100A IPAK

Infineon Technologies
2,500 -

RFQ

IRFU3711

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 2.5W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3711L

IRF3711L

MOSFET N-CH 20V 110A TO262

Infineon Technologies
3,885 -

RFQ

IRF3711L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3709

IRF3709

MOSFET N-CH 30V 90A TO220AB

Infineon Technologies
3,924 -

RFQ

IRF3709

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF630NL

IRF630NL

MOSFET N-CH 200V 9.3A TO262

Infineon Technologies
3,963 -

RFQ

IRF630NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1704

IRF1704

MOSFET N-CH 40V 170A TO220AB

Infineon Technologies
2,343 -

RFQ

IRF1704

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 170A (Tc) 10V 4mOhm @ 100A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6950 pF @ 25 V - 230W (Tc) -55°C ~ 200°C (TJ) Through Hole
IRF7702

IRF7702

MOSFET P-CH 12V 8A 8TSSOP

Infineon Technologies
3,575 -

RFQ

IRF7702

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 8A (Tc) 1.8V, 4.5V 14mOhm @ 8A, 4.5V 1.2V @ 250µA 81 nC @ 4.5 V ±8V 3470 pF @ 10 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3707

IRFR3707

MOSFET N-CH 30V 61A DPAK

Infineon Technologies
2,847 -

RFQ

IRFR3707

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 13mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU3704

IRFU3704

MOSFET N-CH 20V 75A IPAK

Infineon Technologies
3,511 -

RFQ

IRFU3704

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1607

IRF1607

MOSFET N-CH 75V 142A TO220AB

Infineon Technologies
3,011 -

RFQ

IRF1607

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 142A (Tc) 10V 7.5mOhm @ 85A, 10V 4V @ 250µA 320 nC @ 10 V ±20V 7750 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7451

IRF7451

MOSFET N-CH 150V 3.6A 8SO

Infineon Technologies
2,524 -

RFQ

IRF7451

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 3.6A (Ta) 10V 90mOhm @ 2.2A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V 990 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR12N25D

IRFR12N25D

MOSFET N-CH 250V 14A DPAK

Infineon Technologies
3,588 -

RFQ

IRFR12N25D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 260mOhm @ 8.4A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 810 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU12N25D

IRFU12N25D

MOSFET N-CH 250V 14A IPAK

Infineon Technologies
2,366 -

RFQ

IRFU12N25D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 260mOhm @ 8.4A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 810 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1404S

IRL1404S

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies
3,068 -

RFQ

IRL1404S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3704

IRFR3704

MOSFET N-CH 20V 75A DPAK

Infineon Technologies
2,242 -

RFQ

IRFR3704

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7807VD2

IRF7807VD2

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,006 -

RFQ

IRF7807VD2

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±20V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL1404L

IRL1404L

MOSFET N-CH 40V 160A TO262

Infineon Technologies
3,302 -

RFQ

IRL1404L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1407STRR

IRF1407STRR

MOSFET N-CH 75V 100A D2PAK

Infineon Technologies
2,491 -

RFQ

IRF1407STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.8mOhm @ 78A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 8399 Record«Prev1... 1819202122232425...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário