Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPW60R031CFD7XKSA1

IPW60R031CFD7XKSA1

MOSFET N-CH 650V 63A TO247-3

Infineon Technologies
3,759 -

RFQ

IPW60R031CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 63A (Tc) 10V 31mOhm @ 32.6A, 10V 4.5V @ 1.63mA 141 nC @ 10 V ±20V 5623 pF @ 400 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R041P6FKSA1

IPW60R041P6FKSA1

MOSFET N-CH 600V 77.5A TO247-3

Infineon Technologies
2,119 -

RFQ

IPW60R041P6FKSA1

Ficha técnica

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 77.5A (Tc) 10V 41mOhm @ 35.5A, 10V 4.5V @ 2.96mA 170 nC @ 10 V ±20V 8180 pF @ 100 V - 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMW65R072M1HXKSA1

IMW65R072M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies
480 -

RFQ

Tube - Active - - - 26A (Tc) - - - - - - - - - -
2N7002L6327HTSA1

2N7002L6327HTSA1

MOSFET N-CH 60V 300MA SOT23-3

Infineon Technologies
3,381 -

RFQ

2N7002L6327HTSA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4.5V, 10V 3Ohm @ 500mA, 10V 2.5V @ 250µA 0.6 nC @ 10 V ±20V 20 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC152N10NSFGATMA1

BSC152N10NSFGATMA1

MOSFET N-CH 100V 9.4A/63A TDSON

Infineon Technologies
2,186 -

RFQ

BSC152N10NSFGATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Ta), 63A (Tc) 10V 15.2mOhm @ 25A, 10V 4V @ 72µA 29 nC @ 10 V ±20V 1900 pF @ 50 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSF045N03MQ3 G

BSF045N03MQ3 G

MOSFET N-CH 30V 18A/63A 2WDSON

Infineon Technologies
2,787 -

RFQ

BSF045N03MQ3 G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 63A (Tc) 4.5V, 10V 4.5mOhm @ 20A, 10V 2.2V @ 250µA 34 nC @ 10 V ±20V 2600 pF @ 15 V - - -40°C ~ 150°C (TJ) Surface Mount
BSP321PL6327HTSA1

BSP321PL6327HTSA1

MOSFET P-CH 100V 980MA SOT223-4

Infineon Technologies
3,377 -

RFQ

BSP321PL6327HTSA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 980mA (Tc) 10V 900mOhm @ 980mA, 10V 4V @ 380µA 12 nC @ 10 V ±20V 319 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP322PL6327HTSA1

BSP322PL6327HTSA1

MOSFET P-CH 100V 1A SOT223-4

Infineon Technologies
10,750 -

RFQ

BSP322PL6327HTSA1

Ficha técnica

Tape & Reel (TR),Bulk SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 1A (Tc) 4.5V, 10V 800mOhm @ 1A, 10V 1V @ 380µA 16.5 nC @ 10 V ±20V 372 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSR315PL6327HTSA1

BSR315PL6327HTSA1

MOSFET P-CH 60V 620MA SC59

Infineon Technologies
2,525 -

RFQ

BSR315PL6327HTSA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 60 V 620mA (Ta) 4.5V, 10V 800mOhm @ 620mA, 10V 2V @ 160µA 6 nC @ 10 V ±20V 176 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSR316PL6327HTSA1

BSR316PL6327HTSA1

MOSFET P-CH 100V 360MA SC59

Infineon Technologies
2,494 -

RFQ

BSR316PL6327HTSA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 100 V 360mA (Ta) 4.5V, 10V 1.8Ohm @ 360mA, 10V 1V @ 170µA 7 nC @ 10 V ±20V 165 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSR92PL6327HTSA1

BSR92PL6327HTSA1

MOSFET P-CH 250V 140MA SC59

Infineon Technologies
2,895 -

RFQ

BSR92PL6327HTSA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 250 V 140mA (Ta) 2.8V, 10V 11Ohm @ 140mA, 10V 1V @ 130µA 4.8 nC @ 10 V ±20V 109 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS119L6327HTSA1

BSS119L6327HTSA1

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies
2,993 -

RFQ

BSS119L6327HTSA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V 2.3V @ 50µA 2.5 nC @ 10 V ±20V 78 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPW65R037C6FKSA1

IPW65R037C6FKSA1

MOSFET N-CH 650V 83.2A TO247-3

Infineon Technologies
240 -

RFQ

IPW65R037C6FKSA1

Ficha técnica

Tube CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 650 V 83.2A (Tc) 10V 37mOhm @ 33.1A, 10V 3.5V @ 3.3mA 330 nC @ 10 V ±20V 7240 pF @ 100 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZ120R045M1XKSA1

IMZ120R045M1XKSA1

SICFET N-CH 1200V 52A TO247-4

Infineon Technologies
3,367 -

RFQ

IMZ120R045M1XKSA1

Ficha técnica

Tray CoolSiC™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 52A (Tc) 15V 59mOhm @ 20A, 15V 5.7V @ 10mA 52 nC @ 15 V +20V, -10V 1900 pF @ 800 V Current Sensing 228W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMW120R045M1XKSA1

IMW120R045M1XKSA1

SICFET N-CH 1.2KV 52A TO247-3

Infineon Technologies
2,623 -

RFQ

IMW120R045M1XKSA1

Ficha técnica

Tube CoolSiC™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 52A (Tc) 15V 59mOhm @ 20A, 15V 5.7V @ 10mA 52 nC @ 15 V +20V, -10V 1900 pF @ 800 V - 228W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R024P7XKSA1

IPW60R024P7XKSA1

MOSFET N-CH 650V 101A TO247-3-41

Infineon Technologies
3,236 -

RFQ

IPW60R024P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 101A (Tc) 10V 24mOhm @ 42.4A, 10V 4V @ 2.03mA 164 nC @ 10 V ±20V 7144 pF @ 400 V - 291W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSS126L6327HTSA1

BSS126L6327HTSA1

MOSFET N-CH 600V 21MA SOT23-3

Infineon Technologies
2,282 -

RFQ

BSS126L6327HTSA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21mA (Ta) 0V, 10V 500Ohm @ 16mA, 10V 1.6V @ 8µA 2.1 nC @ 5 V ±20V 28 pF @ 25 V Depletion Mode 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS126L6906HTSA1

BSS126L6906HTSA1

MOSFET N-CH 600V 21MA SOT23-3

Infineon Technologies
2,429 -

RFQ

BSS126L6906HTSA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21mA (Ta) 0V, 10V 500Ohm @ 16mA, 10V 1.6V @ 8µA 2.1 nC @ 5 V ±20V 28 pF @ 25 V Depletion Mode 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS127L6327HTSA1

BSS127L6327HTSA1

MOSFET N-CH 600V 21MA SOT23-3

Infineon Technologies
3,297 -

RFQ

BSS127L6327HTSA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21mA (Ta) 4.5V, 10V 500Ohm @ 16mA, 10V 2.6V @ 8µA 1 nC @ 10 V ±20V 28 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS138NL6433HTMA1

BSS138NL6433HTMA1

MOSFET N-CH 60V 230MA SOT23-3

Infineon Technologies
3,201 -

RFQ

BSS138NL6433HTMA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 230mA (Ta) 4.5V, 10V 3.5Ohm @ 230mA, 10V 1.4V @ 250µA 1.4 nC @ 10 V ±20V 41 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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