Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP065N03LGXKSA1

IPP065N03LGXKSA1

MOSFET N-CH 30V 50A TO220-3

Infineon Technologies
16,000 -

RFQ

IPP065N03LGXKSA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.5mOhm @ 30A, 10V 2.2V @ 250µA 23 nC @ 10 V ±20V 2400 pF @ 15 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP096N03L G

IPP096N03L G

MOSFET N-CH 30V 35A TO220-3

Infineon Technologies
2,562 -

RFQ

IPP096N03L G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 9.6mOhm @ 30A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 1600 pF @ 15 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP114N03L G

IPP114N03L G

MOSFET N-CH 30V 30A TO220-3

Infineon Technologies
3,274 -

RFQ

IPP114N03L G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 11.4mOhm @ 30A, 10V 2.2V @ 250µA 14 nC @ 10 V ±20V 1500 pF @ 15 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP147N03L G

IPP147N03L G

MOSFET N-CH 30V 20A TO220-3

Infineon Technologies
2,687 -

RFQ

IPP147N03L G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 14.7mOhm @ 20A, 10V 2.2V @ 250µA 10 nC @ 10 V ±20V 1000 pF @ 15 V - 31W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4620PBF

IRFSL4620PBF

MOSFET N-CH 200V 24A TO262

Infineon Technologies
3,612 -

RFQ

IRFSL4620PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 77.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL5620PBF

IRFSL5620PBF

MOSFET N-CH 200V 24A TO262

Infineon Technologies
3,997 -

RFQ

IRFSL5620PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 77.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU4620PBF

IRFU4620PBF

MOSFET N-CH 200V 24A IPAK

Infineon Technologies
3,149 -

RFQ

IRFU4620PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 78mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLSL3036PBF

IRLSL3036PBF

MOSFET N-CH 60V 195A TO262

Infineon Technologies
3,754 -

RFQ

IRLSL3036PBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS031N03L G

IPS031N03L G

MOSFET N-CH 30V 90A TO251-3

Infineon Technologies
3,325 -

RFQ

IPS031N03L G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 3.1mOhm @ 30A, 10V 2.2V @ 250µA 51 nC @ 10 V ±20V 5300 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS040N03LGBKMA1

IPS040N03LGBKMA1

MOSFET N-CH 30V 90A TO251-3

Infineon Technologies
3,362 -

RFQ

IPS040N03LGBKMA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V 2.2V @ 250µA 38 nC @ 10 V ±20V 3900 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS050N03LGAKMA1

IPS050N03LGAKMA1

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies
2,836 -

RFQ

IPS050N03LGAKMA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V 2.2V @ 250µA 31 nC @ 10 V ±20V 3200 pF @ 15 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS060N03LGAKMA1

IPS060N03LGAKMA1

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies
6,000 -

RFQ

IPS060N03LGAKMA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V 2.2V @ 250µA 23 nC @ 10 V ±20V 2400 pF @ 15 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS090N03LGAKMA1

IPS090N03LGAKMA1

MOSFET N-CH 30V 40A TO251-3

Infineon Technologies
2,095 -

RFQ

IPS090N03LGAKMA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 1600 pF @ 15 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS105N03LGAKMA1

IPS105N03LGAKMA1

MOSFET N-CH 30V 35A TO251-3

Infineon Technologies
27,000 -

RFQ

IPS105N03LGAKMA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 10.5mOhm @ 30A, 10V 2.2V @ 250µA 14 nC @ 10 V ±20V 1500 pF @ 15 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS135N03LGAKMA1

IPS135N03LGAKMA1

MOSFET N-CH 30V 30A TO251-3

Infineon Technologies
3,967 -

RFQ

IPS135N03LGAKMA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 13.5mOhm @ 30A, 10V 2.2V @ 250µA 10 nC @ 10 V ±20V 1000 pF @ 15 V - 31W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU039N03LGXK

IPU039N03LGXK

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies
3,551 -

RFQ

IPU039N03LGXK

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 3.9mOhm @ 30A, 10V 2.2V @ 250µA 51 nC @ 10 V ±20V 5300 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU050N03L G

IPU050N03L G

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies
3,854 -

RFQ

IPU050N03L G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V 2.2V @ 250µA 31 nC @ 10 V ±20V 3200 pF @ 15 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU060N03L G

IPU060N03L G

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies
2,616 -

RFQ

IPU060N03L G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V 2.2V @ 250µA 23 nC @ 10 V ±20V 2400 pF @ 15 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU090N03L G

IPU090N03L G

MOSFET N-CH 30V 40A TO251-3

Infineon Technologies
3,517 -

RFQ

IPU090N03L G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 1600 pF @ 15 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI076N15N5AKSA1

IPI076N15N5AKSA1

MV POWER MOS

Infineon Technologies
3,471 -

RFQ

IPI076N15N5AKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 112A (Tc) 8V, 10V 7.6mOhm @ 56A, 10V 4.6V @ 160µA 61 nC @ 10 V ±20V 4700 pF @ 75 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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