Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IAUT300N08S5N014ATMA1

IAUT300N08S5N014ATMA1

MOSFET N-CH 80V 300A 8HSOF

Infineon Technologies
2,899 -

RFQ

IAUT300N08S5N014ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 80 V 300A (DC) 6V, 10V 1.4mOhm @ 100A, 10V 3.8V @ 230µA 187 nC @ 10 V ±20V 13178 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA029N06NXKSA1

IPA029N06NXKSA1

MOSFET N-CH 60V 84A TO220-FP

Infineon Technologies
3,159 -

RFQ

IPA029N06NXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 84A (Tc) 6V, 10V 2.9mOhm @ 84A, 10V 3.3V @ 75µA 66 nC @ 10 V ±20V 5125 pF @ 30 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7703TRPBF

IRF7703TRPBF

MOSFET P-CH 40V 6A 8TSSOP

Infineon Technologies
2,214 -

RFQ

IRF7703TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 6A (Ta) 4.5V, 10V 28mOhm @ 6A, 10V 3V @ 250µA 62 nC @ 4.5 V ±20V 5220 pF @ 25 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS7730TRL7PP

IRFS7730TRL7PP

MOSFET N-CH 75V 240A D2PAK

Infineon Technologies
3,239 -

RFQ

IRFS7730TRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.7V @ 250µA 428 nC @ 10 V ±20V 13970 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7530TRL7PP

IRFS7530TRL7PP

MOSFET N CH 60V 240A D2PAK

Infineon Technologies
2,308 -

RFQ

IRFS7530TRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.7V @ 250µA 354 nC @ 10 V ±20V 12960 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP3306PBF

IRFP3306PBF

MOSFET N-CH 60V 120A TO247AC

Infineon Technologies
3,315 -

RFQ

IRFP3306PBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4520 pF @ 50 V - 220W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R180C7XKSA1

IPP60R180C7XKSA1

MOSFET N-CH 600V 13A TO220-3

Infineon Technologies
2,108 -

RFQ

IPP60R180C7XKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT004N03LATMA1

IPT004N03LATMA1

MOSFET N-CH 30V 300A 8HSOF

Infineon Technologies
2,900 -

RFQ

IPT004N03LATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 300A (Tc) 4.5V, 10V 0.4mOhm @ 150A, 10V 2.2V @ 250µA 163 nC @ 4.5 V ±20V 24000 pF @ 15 V - 3.8W (Ta), 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB017N08N5ATMA1

IPB017N08N5ATMA1

MOSFET N-CH 80V 120A D2PAK

Infineon Technologies
3,364 -

RFQ

IPB017N08N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.8V @ 280µA 223 nC @ 10 V ±20V 16900 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R299CPXKSA1

IPP60R299CPXKSA1

MOSFET N-CH 650V 11A TO220-3

Infineon Technologies
2,342 -

RFQ

IPP60R299CPXKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF1404Z

AUIRF1404Z

MOSFET N-CH 40V 160A TO220AB

Infineon Technologies
3,800 -

RFQ

AUIRF1404Z

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP076N12N3GXKSA1

IPP076N12N3GXKSA1

MOSFET N-CH 120V 100A TO220-3

Infineon Technologies
3,977 -

RFQ

IPP076N12N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 100A (Tc) 10V 7.6mOhm @ 100A, 10V 4V @ 130µA 101 nC @ 10 V ±20V 6640 pF @ 60 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
BTS282ZE3180AATMA2

BTS282ZE3180AATMA2

MOSFET N-CH 49V 80A TO263-7

Infineon Technologies
2,484 -

RFQ

BTS282ZE3180AATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk TEMPFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 49 V 80A (Tc) 4.5V, 10V 6.5mOhm @ 36A, 10V 2V @ 240µA 232 nC @ 10 V ±20V 4800 pF @ 25 V Temperature Sensing Diode 300W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IPB60R125C6ATMA1

IPB60R125C6ATMA1

MOSFET N-CH 600V 30A D2PAK

Infineon Technologies
2,970 -

RFQ

IPB60R125C6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 960µA 96 nC @ 10 V ±20V 2127 pF @ 100 V - 219W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL3207ZPBF

IRFSL3207ZPBF

MOSFET N-CH 75V 120A TO262

Infineon Technologies
2,092 -

RFQ

IRFSL3207ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 4.1mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6920 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF40SC240ARMA1

IRF40SC240ARMA1

MOSFET N-CH 40V 360A TO263-7

Infineon Technologies
2,259 -

RFQ

IRF40SC240ARMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 360A (Tc) 6V, 10V 0.65mOhm @ 100A, 10V 3.7V @ 250µA 458 nC @ 10 V ±20V 18000 pF @ 20 V - 2.4W (Ta), 417W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2

MOSFET N-CH 80V 300A 8HSOF

Infineon Technologies
2,310 -

RFQ

IAUT300N08S5N012ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 300A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.8V @ 275µA 231 nC @ 10 V ±20V 16250 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL1404ZPBF

IRL1404ZPBF

MOSFET N-CH 40V 75A TO220AB

Infineon Technologies
3,566 -

RFQ

IRL1404ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW80R360P7XKSA1

IPW80R360P7XKSA1

MOSFET N-CH 800V 13A TO247-3

Infineon Technologies
2,333 -

RFQ

IPW80R360P7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 360mOhm @ 5.6A, 10V 3.5V @ 280µA 30 nC @ 10 V ±20V 930 pF @ 500 V - 84W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB4310PBF

IRFB4310PBF

MOSFET N-CH 100V 130A TO220AB

Infineon Technologies
2,966 -

RFQ

IRFB4310PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 8399 Record«Prev1... 170171172173174175176177...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário