Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFP7530PBF

IRFP7530PBF

MOSFET N-CH 60V 195A TO247

Infineon Technologies
3,561 -

RFQ

IRFP7530PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V 13703 pF @ 25 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R170CFD7XKSA1

IPP60R170CFD7XKSA1

MOSFET N-CH 650V 14A TO220-3

Infineon Technologies
2,605 -

RFQ

IPP60R170CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 170mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R170CFD7XKSA1

IPA60R170CFD7XKSA1

MOSFET N-CH 650V 8A TO220

Infineon Technologies
2,545 -

RFQ

IPA60R170CFD7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 170mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 26W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS3006-7PPBF

IRFS3006-7PPBF

MOSFET N-CH 60V 240A D2PAK

Infineon Technologies
2,994 -

RFQ

IRFS3006-7PPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3006PBF

IRFS3006PBF

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies
3,395 -

RFQ

IRFS3006PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3107-7PPBF

IRFS3107-7PPBF

MOSFET N-CH 75V 240A D2PAK

Infineon Technologies
3,996 -

RFQ

IRFS3107-7PPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) 10V 2.6mOhm @ 160A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3107PBF

IRFS3107PBF

MOSFET N-CH 75V 195A D2PAK

Infineon Technologies
3,793 -

RFQ

IRFS3107PBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 10V 3mOhm @ 140A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9370 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4010-7PPBF

IRFS4010-7PPBF

MOSFET N-CH 100V 190A D2PAK

Infineon Technologies
2,977 -

RFQ

IRFS4010-7PPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 10V 4mOhm @ 110A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 9830 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4010PBF

IRFS4010PBF

MOSFET N-CH 100V 180A D2PAK

Infineon Technologies
3,506 -

RFQ

IRFS4010PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7706GTRPBF

IRF7706GTRPBF

MOSFET P-CH 30V 7A 8TSSOP

Infineon Technologies
2,601 -

RFQ

IRF7706GTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 22mOhm @ 7A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2211 pF @ 25 V - 1.51W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7707GTRPBF

IRF7707GTRPBF

MOSFET P-CH 20V 7A 8TSSOP

Infineon Technologies
2,484 -

RFQ

IRF7707GTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7A (Ta) 2.5V, 4.5V 22mOhm @ 7A, 4.5V 1.2V @ 250µA 47 nC @ 4.5 V ±12V 2361 pF @ 15 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF8252TRPBF

IRF8252TRPBF

MOSFET N-CH 25V 25A 8SO

Infineon Technologies
2,620 -

RFQ

IRF8252TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 25A (Ta) 4.5V, 10V 2.7mOhm @ 25A, 10V 2.35V @ 100µA 53 nC @ 4.5 V ±20V 5305 pF @ 13 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7704GTRPBF

IRF7704GTRPBF

MOSFET P-CH 40V 4.6A 8TSSOP

Infineon Technologies
3,645 -

RFQ

IRF7704GTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 4.6A (Ta) 4.5V, 10V 46mOhm @ 4.6A, 10V 3V @ 250µA 38 nC @ 4.5 V ±20V 3150 pF @ 25 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7705GTRPBF

IRF7705GTRPBF

MOSFET P-CH 30V 8A 8TSSOP

Infineon Technologies
2,366 -

RFQ

IRF7705GTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) 4.5V, 10V 18mOhm @ 8A, 10V 2.5V @ 250µA 88 nC @ 10 V ±20V 2774 pF @ 25 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF6797MTR1PBF

IRF6797MTR1PBF

MOSFET N-CH 25V 36A DIRECTFET

Infineon Technologies
2,894 -

RFQ

IRF6797MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 36A (Ta), 210A (Tc) 4.5V, 10V 1.4mOhm @ 38A, 10V 2.35V @ 150µA 68 nC @ 4.5 V ±20V 5790 pF @ 13 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFH7921TRPBF

IRFH7921TRPBF

MOSFET N-CH 30V 15A/34A PQFN

Infineon Technologies
3,375 -

RFQ

IRFH7921TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 34A (Tc) 4.5V, 10V 8.5mOhm @ 15A, 10V 2.35V @ 25µA 14 nC @ 4.5 V ±20V 1210 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF6713STR1PBF

IRF6713STR1PBF

MOSFET N-CH 25V 22A DIRECTFET

Infineon Technologies
2,190 -

RFQ

IRF6713STR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 22A (Ta), 95A (Tc) 4.5V, 10V 3mOhm @ 22A, 10V 2.4V @ 50µA 32 nC @ 4.5 V ±20V 2880 pF @ 13 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6795MTR1PBF

IRF6795MTR1PBF

MOSFET N-CH 25V 32A DIRECTFET

Infineon Technologies
2,824 -

RFQ

IRF6795MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 160A (Tc) 4.5V, 10V 1.8mOhm @ 32A, 10V 2.35V @ 100µA 53 nC @ 4.5 V ±20V 4280 pF @ 13 V - 2.8W (Ta), 75W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6633ATR1PBF

IRF6633ATR1PBF

MOSFET N-CH 20V 16A DIRECTFET

Infineon Technologies
3,551 -

RFQ

IRF6633ATR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta), 69A (Tc) 4.5V, 10V 5.6mOhm @ 16A, 10V 2.2V @ 250µA 17 nC @ 4.5 V ±20V 1410 pF @ 10 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6720S2TR1PBF

IRF6720S2TR1PBF

MOSFET N-CH 30V 11A DIRECTFET

Infineon Technologies
3,284 -

RFQ

IRF6720S2TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 35A (Tc) 4.5V, 10V 8mOhm @ 11A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1140 pF @ 15 V - 1.7W (Ta), 17W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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