Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP020N06NAKSA1

IPP020N06NAKSA1

MOSFET N-CH 60V 29A/120A TO220-3

Infineon Technologies
2,629 -

RFQ

IPP020N06NAKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 29A (Ta), 120A (Tc) 6V, 10V 2mOhm @ 100A, 10V 2.8V @ 143µA 106 nC @ 10 V ±20V 7800 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP023N08N5AKSA1

IPP023N08N5AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies
3,501 -

RFQ

IPP023N08N5AKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 208µA 166 nC @ 10 V ±20V 12100 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R160P6FKSA1

IPW60R160P6FKSA1

MOSFET N-CH 600V 23.8A TO247-3

Infineon Technologies
2,840 -

RFQ

IPW60R160P6FKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R180C7XKSA1

IPA60R180C7XKSA1

MOSFET N-CH 600V 9A TO220-FP

Infineon Technologies
3,475 -

RFQ

IPA60R180C7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP4110PBF

IRFP4110PBF

MOSFET N-CH 100V 120A TO247AC

Infineon Technologies
2,748 -

RFQ

IRFP4110PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP015N04NGXKSA1

IPP015N04NGXKSA1

MOSFET N-CH 40V 120A TO220-3

Infineon Technologies
3,607 -

RFQ

IPP015N04NGXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.5mOhm @ 100A, 10V 4V @ 200µA 250 nC @ 10 V ±20V 20000 pF @ 20 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF7749L2TR

AUIRF7749L2TR

MOSFET N-CH 60V 36A DIRECTFET

Infineon Technologies
2,697 -

RFQ

AUIRF7749L2TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 36A (Ta), 345A (Tc) 10V 1.5mOhm @ 120A, 10V 4V @ 250µA 275 nC @ 10 V 60V 10655 pF @ 25 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R099P7XKSA1

IPA60R099P7XKSA1

MOSFET N-CH 600V 31A TO220

Infineon Technologies
2,974 -

RFQ

IPA60R099P7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 99mOhm @ 10.5A, 10V 4V @ 530µA 45 nC @ 10 V ±20V 1952 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R125CFD7XKSA1

IPP60R125CFD7XKSA1

MOSFET N-CH 600V 18A TO220-3

Infineon Technologies
2,780 -

RFQ

IPP60R125CFD7XKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB4137PBF

IRFB4137PBF

MOSFET N-CH 300V 38A TO220

Infineon Technologies
2,979 -

RFQ

IRFB4137PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 69mOhm @ 24A, 10V 5V @ 250µA 125 nC @ 10 V ±20V 5168 pF @ 50 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPT60R080G7XTMA1

IPT60R080G7XTMA1

MOSFET N-CH 650V 29A 8HSOF

Infineon Technologies
435 -

RFQ

IPT60R080G7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 80mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1640 pF @ 400 V - 167W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SPA17N80C3XKSA1

SPA17N80C3XKSA1

MOSFET N-CH 800V 17A TO220-3

Infineon Technologies
3,833 -

RFQ

SPA17N80C3XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 11A, 10V 3.9V @ 1mA 177 nC @ 10 V ±20V 2320 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP17N80C3XKSA1

SPP17N80C3XKSA1

MOSFET N-CH 800V 17A TO220-3

Infineon Technologies
3,505 -

RFQ

SPP17N80C3XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 11A, 10V 3.9V @ 1mA 177 nC @ 10 V ±20V 2320 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R150CFDFKSA1

IPW65R150CFDFKSA1

MOSFET N-CH 650V 22.4A TO247-3

Infineon Technologies
3,956 -

RFQ

IPW65R150CFDFKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB033N10N5LFATMA1

IPB033N10N5LFATMA1

MOSFET N-CH 100V 120A TO263-3

Infineon Technologies
3,861 -

RFQ

IPB033N10N5LFATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.3mOhm @ 100A, 10V 4.1V @ 150µA 102 nC @ 10 V ±20V 460 pF @ 50 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPW15N60C3FKSA1

SPW15N60C3FKSA1

MOSFET N-CH 650V 15A TO247-3

Infineon Technologies
2,687 -

RFQ

SPW15N60C3FKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1660 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP030N10N5AKSA1

IPP030N10N5AKSA1

MOSFET N-CH 100V 120A TO220-3

Infineon Technologies
2,073 -

RFQ

IPP030N10N5AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.8V @ 184µA 139 nC @ 10 V ±20V 10300 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R120C7XKSA1

IPP60R120C7XKSA1

MOSFET N-CH 600V 19A TO220-3

Infineon Technologies
2,303 -

RFQ

IPP60R120C7XKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 120mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1500 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP4332PBF

IRFP4332PBF

MOSFET N-CH 250V 57A TO247AC

Infineon Technologies
3,312 -

RFQ

IRFP4332PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 57A (Tc) 10V 33mOhm @ 35A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 5860 pF @ 25 V - 360W (Tc) -40°C ~ 175°C (TJ) Through Hole
BSS131L6327HTSA1

BSS131L6327HTSA1

MOSFET N-CH 240V 110MA SOT23-3

Infineon Technologies
2,512 -

RFQ

BSS131L6327HTSA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 240 V 110mA (Ta) 4.5V, 10V 14Ohm @ 100mA, 10V 1.8V @ 56µA 3.1 nC @ 10 V ±20V 77 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
Total 8399 Record«Prev1... 173174175176177178179180...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário