Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR3418TRPBF

IRFR3418TRPBF

MOSFET N-CH 80V 70A DPAK

Infineon Technologies
3,434 -

RFQ

IRFR3418TRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 10V 14mOhm @ 18A, 10V 5.5V @ 250µA 94 nC @ 10 V ±20V 3510 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6100PBF

IRF6100PBF

MOSFET P-CH 20V 5.1A 4FLIPFET

Infineon Technologies
3,485 -

RFQ

IRF6100PBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.1A (Ta) 2.5V, 4.5V 65mOhm @ 5.1A, 4.5V 1.2V @ 250µA 21 nC @ 5 V ±12V 1230 pF @ 15 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF6722STRPBF

IRF6722STRPBF

MOSFET N-CH 30V 13A DIRECTFET

Infineon Technologies
3,122 -

RFQ

IRF6722STRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 58A (Tc) 4.5V, 10V 7.3mOhm @ 13A, 10V 2.4V @ 50µA 17 nC @ 4.5 V ±20V 1320 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6722MTRPBF

IRF6722MTRPBF

MOSFET N-CH 30V 13A DIRECTFET

Infineon Technologies
3,153 -

RFQ

IRF6722MTRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 56A (Tc) 4.5V, 10V 7.7mOhm @ 13A, 10V 2.4V @ 50µA 17 nC @ 4.5 V ±20V 1300 pF @ 15 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6710S2TRPBF

IRF6710S2TRPBF

MOSFET N-CH 25V 12A DIRECTFET

Infineon Technologies
2,401 -

RFQ

IRF6710S2TRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 12A (Ta), 37A (Tc) 4.5V, 10V 5.9mOhm @ 12A, 10V 2.4V @ 25µA 13 nC @ 4.5 V ±20V 1190 pF @ 13 V - 1.8W (Ta), 15W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA057N08N3GXKSA1

IPA057N08N3GXKSA1

MOSFET N-CH 80V 60A TO220-FP

Infineon Technologies
2,016 -

RFQ

IPA057N08N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 6V, 10V 5.7mOhm @ 60A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 39W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS3004TRLPBF

IRFS3004TRLPBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
2,913 -

RFQ

IRFS3004TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Ta) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BTS244ZE3062AATMA2

BTS244ZE3062AATMA2

MOSFET N-CH 55V 35A TO263-5

Infineon Technologies
3,703 -

RFQ

BTS244ZE3062AATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk TEMPFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 4.5V, 10V 13mOhm @ 19A, 10V 2V @ 130µA 130 nC @ 10 V ±20V 2660 pF @ 25 V Temperature Sensing Diode 170W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IPB65R150CFDATMA1

IPB65R150CFDATMA1

MOSFET N-CH 650V 22.4A D2PAK

Infineon Technologies
3,701 -

RFQ

IPB65R150CFDATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA80R450P7XKSA1

IPA80R450P7XKSA1

MOSFET N-CH 800V 11A TO220-3F

Infineon Technologies
3,771 -

RFQ

IPA80R450P7XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 450mOhm @ 4.5A, 10V 3.5V @ 220µA 24 nC @ 10 V ±20V 770 pF @ 500 V Super Junction 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R280P7XKSA1

IPA60R280P7XKSA1

MOSFET N-CH 600V 12A TO220

Infineon Technologies
1,588 -

RFQ

IPA60R280P7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 24W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R280P7XKSA1

IPP60R280P7XKSA1

MOSFET N-CH 600V 12A TO220-3

Infineon Technologies
3,479 -

RFQ

IPP60R280P7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 53W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB38N20DPBF

IRFB38N20DPBF

MOSFET N-CH 200V 43A TO220AB

Infineon Technologies
2,082 -

RFQ

IRFB38N20DPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 43A (Tc) 10V 54mOhm @ 26A, 10V 5V @ 250µA 91 nC @ 10 V ±20V 2900 pF @ 25 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSZ042N04NSGATMA1

BSZ042N04NSGATMA1

MOSFET N-CH 40V 40A TSDSON-8

Infineon Technologies
2,227 -

RFQ

BSZ042N04NSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 10V 4.2mOhm @ 20A, 10V 4V @ 36µA 46 nC @ 10 V ±20V 3700 pF @ 20 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ105N04NSGATMA1

BSZ105N04NSGATMA1

MOSFET N-CH 40V 11A/40A 8TSDSON

Infineon Technologies
3,977 -

RFQ

BSZ105N04NSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 11A (Ta), 40A (Tc) 10V 10.5mOhm @ 20A, 10V 4V @ 14µA 17 nC @ 10 V ±20V 1300 pF @ 20 V - 2.1W (Ta), 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ165N04NSGATMA1

BSZ165N04NSGATMA1

MOSFET N-CH 40V 8.9A/31A TSDSON

Infineon Technologies
3,202 -

RFQ

BSZ165N04NSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 8.9A (Ta), 31A (Tc) 10V 16.5mOhm @ 20A, 10V 4V @ 10µA 10 nC @ 10 V ±20V 840 pF @ 20 V - 2.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BS7067N06LS3G

BS7067N06LS3G

MOSFET N-CH 60V 14A/20A 8TSDSON

Infineon Technologies
2,079 -

RFQ

BS7067N06LS3G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 14A (Ta), 20A (Tc) 4.5V, 10V 6.7mOhm @ 20A, 10V 2.2V @ 35µA 62 nC @ 10 V ±20V 4800 pF @ 30 V - 2.1W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ076N06NS3GATMA1

BSZ076N06NS3GATMA1

MOSFET N-CH 60V 20A 8TSDSON

Infineon Technologies
2,788 -

RFQ

BSZ076N06NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 7.6mOhm @ 20A, 10V 4V @ 35µA 50 nC @ 10 V ±20V 4000 pF @ 30 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF540Z

AUIRF540Z

MOSFET N-CH 100V 36A TO220AB

Infineon Technologies
2,651 -

RFQ

AUIRF540Z

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 10V 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1770 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLS4030TRLPBF

IRLS4030TRLPBF

MOSFET N-CH 100V 180A D2PAK

Infineon Technologies
2,589 -

RFQ

IRLS4030TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 4.3mOhm @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V 11360 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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