Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPW60R125CFD7XKSA1

IPW60R125CFD7XKSA1

MOSFET N-CH 600V 18A TO247-3

Infineon Technologies
3,614 -

RFQ

IPW60R125CFD7XKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB114N03L G

IPB114N03L G

MOSFET N-CH 30V 30A D2PAK

Infineon Technologies
2,815 -

RFQ

IPB114N03L G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 11.4mOhm @ 30A, 10V 2.2V @ 250µA 14 nC @ 10 V ±20V 1500 pF @ 15 V - 38W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB12CN10N G

IPB12CN10N G

MOSFET N-CH 100V 67A D2PAK

Infineon Technologies
3,756 -

RFQ

IPB12CN10N G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 67A (Tc) 10V 12.6mOhm @ 67A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4320 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB12CNE8N G

IPB12CNE8N G

MOSFET N-CH 85V 67A D2PAK

Infineon Technologies
2,334 -

RFQ

IPB12CNE8N G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 67A (Tc) 10V 12.9mOhm @ 67A, 10V 4V @ 83µA 64 nC @ 10 V ±20V 4340 pF @ 40 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB147N03LGATMA1

IPB147N03LGATMA1

MOSFET N-CH 30V 20A D2PAK

Infineon Technologies
18,000 -

RFQ

IPB147N03LGATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 14.7mOhm @ 20A, 10V 2.2V @ 250µA 10 nC @ 10 V ±20V 1000 pF @ 15 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R040C7ATMA1

IPB60R040C7ATMA1

MOSFET N-CH 650V 50A TO263-3

Infineon Technologies
2,833 -

RFQ

IPB60R040C7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 40mOhm @ 24.9A, 10V 4V @ 1.24mA 107 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW60R055CFD7XKSA1

IPW60R055CFD7XKSA1

MOSFET N-CH 600V 38A TO247-3

Infineon Technologies
2,668 -

RFQ

IPW60R055CFD7XKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 55mOhm @ 18A, 10V 4.5V @ 900µA 79 nC @ 10 V ±20V 3194 pF @ 400 V - 178W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF7759L2TR

AUIRF7759L2TR

MOSFET N-CH 75V 375A DIRECTFET

Infineon Technologies
2,821 -

RFQ

AUIRF7759L2TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 375A (Tc) 10V 2.3mOhm @ 96A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 12222 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPW32N50C3FKSA1

SPW32N50C3FKSA1

MOSFET N-CH 560V 32A TO247-3

Infineon Technologies
3,903 -

RFQ

SPW32N50C3FKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 560 V 32A (Tc) 10V 110mOhm @ 20A, 10V 3.9V @ 1.8mA 170 nC @ 10 V ±20V 4200 pF @ 25 V - 284W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF300P226

IRF300P226

MOSFET N-CH 300V 100A TO247AC

Infineon Technologies
3,392 -

RFQ

IRF300P226

Ficha técnica

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 300 V 100A (Tc) 10V 19mOhm @ 45A, 10V 4V @ 270µA 191 nC @ 10 V ±20V 10030 pF @ 50 V - 556W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMW120R140M1HXKSA1

IMW120R140M1HXKSA1

SICFET N-CH 1.2KV 19A TO247-3

Infineon Technologies
2,017 -

RFQ

IMW120R140M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 19A (Tc) 15V, 18V 182mOhm @ 6A, 18V 5.7V @ 2.5mA 13 nC @ 18 V +23V, -7V 454 pF @ 800 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R099CPFKSA1

IPW60R099CPFKSA1

MOSFET N-CH 650V 31A TO247-3

Infineon Technologies
3,090 -

RFQ

IPW60R099CPFKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 31A (Tc) 10V 99mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF200P223

IRF200P223

MOSFET N-CH 200V 100A TO247AC

Infineon Technologies
3,624 -

RFQ

IRF200P223

Ficha técnica

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) 10V 11.5mOhm @ 60A, 10V 4V @ 270µA 102 nC @ 10 V ±20V 5094 pF @ 50 V - 313W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF250P224

IRF250P224

MOSFET N-CH 250V 96A TO247AC

Infineon Technologies
2,784 -

RFQ

IRF250P224

Ficha técnica

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 250 V 96A (Tc) 10V 12mOhm @ 58A, 10V 4V @ 270µA 203 nC @ 10 V ±20V 9915 pF @ 50 V - 313W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPT60R022S7XTMA1

IPT60R022S7XTMA1

MOSFET N-CH 600V 23A 8HSOF

Infineon Technologies
2,658 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™S7 Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.44mA 150 nC @ 12 V ±20V 5639 pF @ 300 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFP4568

AUIRFP4568

MOSFET N-CH 150V 171A TO247AC

Infineon Technologies
3,300 -

RFQ

AUIRFP4568

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 171A (Tc) 10V 5.9mOhm @ 103A, 10V 5V @ 250µA 227 nC @ 10 V ±30V 10470 pF @ 50 V - 517W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R037CSFDXKSA1

IPW60R037CSFDXKSA1

MOSFET N CH

Infineon Technologies
3,246 -

RFQ

IPW60R037CSFDXKSA1

Ficha técnica

Tube CoolMOS™ CFSD Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) 10V 37mOhm @ 32.6A, 10V 4.5V @ 1.63mA 136 nC @ 10 V ±20V 5623 pF @ 400 V - 245W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R040CFD7XKSA1

IPW60R040CFD7XKSA1

MOSFET N-CH 600V 50A TO247-3

Infineon Technologies
3,784 -

RFQ

IPW60R040CFD7XKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 40mOhm @ 24.9A, 10V 4.5V @ 1.25mA 109 nC @ 10 V ±20V 4354 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZ120R140M1HXKSA1

IMZ120R140M1HXKSA1

SICFET N-CH 1.2KV 19A TO247-4

Infineon Technologies
2,703 -

RFQ

IMZ120R140M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 19A (Tc) 15V, 18V 182mOhm @ 6A, 18V 5.7V @ 2.5mA 13 nC @ 18 V +23V, -7V 454 pF @ 800 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPZA60R037P7XKSA1

IPZA60R037P7XKSA1

MOSFET N-CH 600V 76A TO247-4

Infineon Technologies
3,277 -

RFQ

IPZA60R037P7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 37mOhm @ 29.5A, 10V 4V @ 1.48mA 121 nC @ 10 V ±20V 5243 pF @ 400 V - 255W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 8399 Record«Prev1... 177178179180181182183184...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário