Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI04CN10N G

IPI04CN10N G

MOSFET N-CH 100V 100A TO262-3

Infineon Technologies
2,242 -

RFQ

IPI04CN10N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 4.2mOhm @ 100A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 13800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI057N08N3 G

IPI057N08N3 G

MOSFET N-CH 80V 80A TO262-3

Infineon Technologies
2,745 -

RFQ

IPI057N08N3 G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 5.7mOhm @ 80A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI05CN10N G

IPI05CN10N G

MOSFET N-CH 100V 100A TO262-3

Infineon Technologies
2,998 -

RFQ

IPI05CN10N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 5.4mOhm @ 100A, 10V 4V @ 250µA 181 nC @ 10 V ±20V 12000 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB80N06S2L05ATMA1

IPB80N06S2L05ATMA1

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,755 -

RFQ

IPB80N06S2L05ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 4.5mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N06S2L06ATMA1

IPB80N06S2L06ATMA1

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,781 -

RFQ

IPB80N06S2L06ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 6mOhm @ 69A, 10V 2V @ 180µA 150 nC @ 10 V ±20V 3800 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N06S2L07ATMA1

IPB80N06S2L07ATMA1

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
3,640 -

RFQ

IPB80N06S2L07ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 6.7mOhm @ 60A, 10V 2V @ 150µA 130 nC @ 10 V ±20V 3160 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N06S2L09ATMA1

IPB80N06S2L09ATMA1

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
3,856 -

RFQ

IPB80N06S2L09ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 8.2mOhm @ 52A, 10V 2V @ 125µA 105 nC @ 10 V ±20V 2620 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N06S2L11ATMA1

IPB80N06S2L11ATMA1

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,360 -

RFQ

IPB80N06S2L11ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 10.7mOhm @ 60A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N06S2L-H5

IPB80N06S2L-H5

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,234 -

RFQ

IPB80N06S2L-H5

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2V @ 250µA 190 nC @ 10 V ±20V 5000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N06S3-05

IPB80N06S3-05

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,087 -

RFQ

IPB80N06S3-05

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.1mOhm @ 63A, 10V 4V @ 110µA 240 nC @ 10 V ±20V 10760 pF @ 25 V - 165W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD068N10N3GBTMA1

IPD068N10N3GBTMA1

MOSFET N-CH 100V 90A TO252-3

Infineon Technologies
3,736 -

RFQ

IPD068N10N3GBTMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 6V, 10V 6.8mOhm @ 90A, 10V 3.5V @ 90µA 68 nC @ 10 V ±20V 4910 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD12CN10NGBUMA1

IPD12CN10NGBUMA1

MOSFET N-CH 100V 67A TO252-3

Infineon Technologies
2,419 -

RFQ

IPD12CN10NGBUMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 67A (Tc) 10V 12.4mOhm @ 67A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4320 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD12CNE8N G

IPD12CNE8N G

MOSFET N-CH 85V 67A TO252-3

Infineon Technologies
2,886 -

RFQ

IPD12CNE8N G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 67A (Tc) 10V 12.4mOhm @ 67A, 10V 4V @ 83µA 64 nC @ 10 V ±20V 4340 pF @ 40 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD135N08N3GBTMA1

IPD135N08N3GBTMA1

MOSFET N-CH 80V 45A TO252-3

Infineon Technologies
3,171 -

RFQ

IPD135N08N3GBTMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 45A (Tc) 6V, 10V 13.5mOhm @ 45A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1730 pF @ 40 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD14N06S280ATMA1

IPD14N06S280ATMA1

MOSFET N-CH 55V 17A TO252-3

Infineon Technologies
3,199 -

RFQ

IPD14N06S280ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 80mOhm @ 7A, 10V 4V @ 14µA 10 nC @ 10 V ±20V 293 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD15N06S2L64ATMA1

IPD15N06S2L64ATMA1

MOSFET N-CH 55V 19A TO252-3

Infineon Technologies
2,482 -

RFQ

IPD15N06S2L64ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 4.5V, 10V 64mOhm @ 13A, 10V 2V @ 14µA 13 nC @ 10 V ±20V 354 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD160N04LGBTMA1

IPD160N04LGBTMA1

MOSFET N-CH 40V 30A TO252-3

Infineon Technologies
2,813 -

RFQ

IPD160N04LGBTMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 4.5V, 10V 16mOhm @ 30A, 10V 2V @ 10µA 15 nC @ 10 V ±20V 1200 pF @ 20 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD16CN10N G

IPD16CN10N G

MOSFET N-CH 100V 53A TO252-3

Infineon Technologies
2,621 -

RFQ

IPD16CN10N G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 53A (Tc) 10V 16mOhm @ 53A, 10V 4V @ 61µA 48 nC @ 10 V ±20V 3220 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD16CNE8N G

IPD16CNE8N G

MOSFET N-CH 85V 53A TO252-3

Infineon Technologies
2,664 -

RFQ

IPD16CNE8N G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 53A (Tc) 10V 16mOhm @ 53A, 10V 4V @ 61µA 48 nC @ 10 V ±20V 3230 pF @ 40 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD170N04NGBTMA1

IPD170N04NGBTMA1

MOSFET N-CH 40V 30A TO252-3

Infineon Technologies
3,456 -

RFQ

IPD170N04NGBTMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 10V 17mOhm @ 30A, 10V 4V @ 10µA 11 nC @ 10 V ±20V 880 pF @ 20 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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