Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD320N20N3GBTMA1

IPD320N20N3GBTMA1

MOSFET N-CH 200V 34A TO252-3

Infineon Technologies
2,604 -

RFQ

IPD320N20N3GBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 34A (Tc) 10V 32mOhm @ 34A, 10V 4V @ 90µA 29 nC @ 10 V ±20V 2350 pF @ 100 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD600N25N3GBTMA1

IPD600N25N3GBTMA1

MOSFET N-CH 250V 25A TO252-3

Infineon Technologies
3,063 -

RFQ

IPD600N25N3GBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 250 V 25A (Tc) 10V 60mOhm @ 25A, 10V 4V @ 90µA 29 nC @ 10 V ±20V 2350 pF @ 100 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9204PBF

IRF9204PBF

MOSFET P-CH 40V 56A TO220AB

Infineon Technologies
3,611 -

RFQ

IRF9204PBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 56A (Ta) 4.5V, 10V 16mOhm @ 37A, 10V 3V @ 100µA 224 nC @ 10 V ±20V 7676 pF @ 25 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB3077GPBF

IRFB3077GPBF

MOSFET N-CH 75V 120A TO220AB

Infineon Technologies
3,480 -

RFQ

IRFB3077GPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 9400 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP4127PBF

IRFP4127PBF

MOSFET N-CH 200V 75A TO247AC

Infineon Technologies
2,564 -

RFQ

IRFP4127PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 75A (Tc) 10V 21mOhm @ 44A, 10V 5V @ 250µA 150 nC @ 10 V ±20V 5380 pF @ 50 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R099P6XKSA1

IPP60R099P6XKSA1

MOSFET N-CH 600V 37.9A TO220-3

Infineon Technologies
2,994 -

RFQ

IPP60R099P6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70 nC @ 10 V ±20V 3330 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA028N08N3GXKSA1

IPA028N08N3GXKSA1

MOSFET N-CH 80V 89A TO220-FP

Infineon Technologies
3,214 -

RFQ

IPA028N08N3GXKSA1

Ficha técnica

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 80 V 89A (Tc) 6V, 10V 2.8mOhm @ 89A, 10V 3.5V @ 270µA 206 nC @ 10 V ±20V 14200 pF @ 40 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R060C7XKSA1

IPW60R060C7XKSA1

MOSFET N-CH 600V 35A TO247-3

Infineon Technologies
240 -

RFQ

IPW60R060C7XKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R070C6FKSA1

IPW65R070C6FKSA1

MOSFET N-CH 650V 53.5A TO247-3

Infineon Technologies
3,396 -

RFQ

IPW65R070C6FKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 53.5A (Tc) 10V 70mOhm @ 17.6A, 10V 3.5V @ 1.76mA 170 nC @ 10 V ±20V 3900 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB4310GPBF

IRFB4310GPBF

MOSFET N-CH 100V 130A TO220AB

Infineon Technologies
2,568 -

RFQ

IRFB4310GPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4310ZGPBF

IRFB4310ZGPBF

MOSFET N-CH 100V 120A TO220AB

Infineon Technologies
2,401 -

RFQ

IRFB4310ZGPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4229PBF

IRFSL4229PBF

MOSFET N-CH 250V 45A TO262

Infineon Technologies
2,301 -

RFQ

IRFSL4229PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 45A (Tc) 10V 48mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4560 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRLB3036GPBF

IRLB3036GPBF

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies
2,302 -

RFQ

IRLB3036GPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU8726PBF

IRLU8726PBF

MOSFET N-CH 30V 86A IPAK

Infineon Technologies
2,608 -

RFQ

IRLU8726PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 86A (Tc) 4.5V, 10V 5.8mOhm @ 25A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V 2150 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU8729-701PBF

IRLU8729-701PBF

MOSFET N-CH 30V 58A IPAK

Infineon Technologies
2,132 -

RFQ

IRLU8729-701PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 8.9mOhm @ 25A, 10V 2.35V @ 25µA 16 nC @ 4.5 V ±20V 1350 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1405ZSTRL7PP

IRF1405ZSTRL7PP

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies
2,837 -

RFQ

IRF1405ZSTRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6201TRPBF

IRF6201TRPBF

MOSFET N-CH 20V 27A 8SO

Infineon Technologies
3,789 -

RFQ

IRF6201TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 27A (Ta) 2.5V, 4.5V 2.45mOhm @ 27A, 4.5V 1.1V @ 100µA 195 nC @ 4.5 V ±12V 8555 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF6709S2TR1PBF

IRF6709S2TR1PBF

MOSFET N-CH 25V 12A DIRECTFET

Infineon Technologies
2,435 -

RFQ

IRF6709S2TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 12A (Ta), 39A (Tc) 4.5V, 10V 7.8mOhm @ 12A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1010 pF @ 13 V - 1.8W (Ta), 21W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6711STR1PBF

IRF6711STR1PBF

MOSFET N-CH 25V 19A DIRECTFET

Infineon Technologies
2,809 -

RFQ

IRF6711STR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta), 84A (Tc) 4.5V, 10V 3.8mOhm @ 19A, 10V 2.35V @ 25µA 20 nC @ 4.5 V ±20V 1810 pF @ 13 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6798MTR1PBF

IRF6798MTR1PBF

MOSFET N-CH 25V 37A DIRECTFET

Infineon Technologies
2,740 -

RFQ

IRF6798MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 37A (Ta), 197A (Tc) 4.5V, 10V 1.3mOhm @ 37A, 10V 2.35V @ 150µA 75 nC @ 4.5 V ±20V 6560 pF @ 13 V Schottky Diode (Body) 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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