Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPW60R180C7XKSA1

IPW60R180C7XKSA1

MOSFET N-CH 600V 13A TO247-3

Infineon Technologies
2,492 -

RFQ

IPW60R180C7XKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLSL4030PBF

IRLSL4030PBF

MOSFET N-CH 100V 180A TO262

Infineon Technologies
2,367 -

RFQ

IRLSL4030PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 4.3mOhm @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V 11360 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R190C7XKSA1

IPW65R190C7XKSA1

MOSFET N-CH 650V 13A TO247-3

Infineon Technologies
480 -

RFQ

IPW65R190C7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 13A (Tc) 10V 190mOhm @ 5.7A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R150CFDXKSA1

IPP65R150CFDXKSA1

MOSFET N-CH 650V 22.4A TO220-3

Infineon Technologies
3,269 -

RFQ

IPP65R150CFDXKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA65R150CFDXKSA1

IPA65R150CFDXKSA1

MOSFET N-CH 650V 22.4A TO220

Infineon Technologies
2,441 -

RFQ

IPA65R150CFDXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 1mA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80N06S4L07ATMA1

IPB80N06S4L07ATMA1

MOSFET N-CH 60V 80A TO263-3

Infineon Technologies
2,847 -

RFQ

IPB80N06S4L07ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 6.4mOhm @ 80A, 10V 2.2V @ 40µA 75 nC @ 10 V ±16V 5680 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB90N06S404ATMA1

IPB90N06S404ATMA1

MOSFET N-CH 60V 90A TO263-3

Infineon Technologies
3,513 -

RFQ

IPB90N06S404ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 3.7mOhm @ 90A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB90N06S4L04ATMA1

IPB90N06S4L04ATMA1

MOSFET N-CH 60V 90A TO263-3

Infineon Technologies
3,023 -

RFQ

IPB90N06S4L04ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.4mOhm @ 90A, 10V 2.2V @ 90µA 170 nC @ 10 V ±16V 13000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD30N06S4L23ATMA1

IPD30N06S4L23ATMA1

MOSFET N-CH 60V 30A TO252-3

Infineon Technologies
2,578 -

RFQ

IPD30N06S4L23ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 23mOhm @ 30A, 10V 2.2V @ 10µA 21 nC @ 10 V ±16V 1560 pF @ 25 V - 36W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50N06S409ATMA1

IPD50N06S409ATMA1

MOSFET N-CH 60V 50A TO252-3

Infineon Technologies
3,820 -

RFQ

IPD50N06S409ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 9mOhm @ 50A, 10V 4V @ 34µA 47 nC @ 10 V ±20V 3785 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50N06S4L08ATMA1

IPD50N06S4L08ATMA1

MOSFET N-CH 60V 50A TO252-3

Infineon Technologies
3,364 -

RFQ

IPD50N06S4L08ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 7.8mOhm @ 50A, 10V 2.2V @ 35µA 64 nC @ 10 V ±16V 4780 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90N06S404ATMA1

IPD90N06S404ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies
3,361 -

RFQ

IPD90N06S404ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 3.8mOhm @ 90A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90N06S405ATMA1

IPD90N06S405ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies
2,715 -

RFQ

IPD90N06S405ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 5.1mOhm @ 90A, 10V 4V @ 60µA 81 nC @ 10 V ±20V 6500 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90N06S407ATMA1

IPD90N06S407ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies
3,492 -

RFQ

IPD90N06S407ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 6.9mOhm @ 90A, 10V 4V @ 40µA 56 nC @ 10 V ±20V 4500 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI034NE7N3 G

IPI034NE7N3 G

MOSFET N-CH 75V 100A TO262-3

Infineon Technologies
3,314 -

RFQ

IPI034NE7N3 G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) - 3.4mOhm @ 100A, 10V 3.8V @ 155µA 117 nC @ 10 V - 8130 pF @ 37.5 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI052NE7N3 G

IPI052NE7N3 G

MOSFET N-CH 75V 80A TO262-3

Infineon Technologies
2,094 -

RFQ

IPI052NE7N3 G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 3.8V @ 91µA 68 nC @ 10 V ±20V 4750 pF @ 37.5 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120N06S402AKSA1

IPI120N06S402AKSA1

MOSFET N-CH 60V 120A TO262-3

Infineon Technologies
2,528 -

RFQ

IPI120N06S402AKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.8mOhm @ 100A, 10V 4V @ 140µA 195 nC @ 10 V ±20V 15750 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120N06S403AKSA1

IPI120N06S403AKSA1

MOSFET N-CH 60V 120A TO262-3

Infineon Technologies
2,358 -

RFQ

IPI120N06S403AKSA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 120µA 160 nC @ 10 V ±20V 13150 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120N06S4H1AKSA1

IPI120N06S4H1AKSA1

MOSFET N-CH 60V 120A TO262-3

Infineon Technologies
2,206 -

RFQ

IPI120N06S4H1AKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 200µA 270 nC @ 10 V ±20V 21900 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI126N10N3 G

IPI126N10N3 G

MOSFET N-CH 100V 58A TO262-3

Infineon Technologies
3,955 -

RFQ

IPI126N10N3 G

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) 6V, 10V 12.6mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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