Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSL802SNL6327HTSA1

BSL802SNL6327HTSA1

MOSFET N-CH 20V 7.5A TSOP-6

Infineon Technologies
3,296 -

RFQ

BSL802SNL6327HTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 7.5A (Ta) 1.8V, 2.5V 22mOhm @ 7.5A, 2.5V 750mV @ 30µA 4.7 nC @ 2.5 V ±8V 1347 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSO080P03SNTMA1

BSO080P03SNTMA1

MOSFET P-CH 30V 12.6A 8DSO

Infineon Technologies
3,856 -

RFQ

BSO080P03SNTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 12.6A (Ta) 10V 8mOhm @ 14.9A, 10V 2.2V @ 250µA 136 nC @ 10 V ±25V 5890 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSO220N03MSGXUMA1

BSO220N03MSGXUMA1

MOSFET N-CH 30V 7A 8DSO

Infineon Technologies
3,394 -

RFQ

BSO220N03MSGXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 22mOhm @ 8.6A, 10V 2.1V @ 250µA 10.4 nC @ 10 V ±20V 800 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS205NL6327HTSA1

BSS205NL6327HTSA1

MOSFET N-CH 20V 2.5A SOT23-3

Infineon Technologies
3,401 -

RFQ

BSS205NL6327HTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 2.5V, 4.5V 50mOhm @ 2.5A, 4.5V 1.2V @ 11µA 3.2 nC @ 4.5 V ±12V 419 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD031N03M G

IPD031N03M G

MOSFET N-CH 30V 90A TO252-3

Infineon Technologies
2,822 -

RFQ

IPD031N03M G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 3.1mOhm @ 30A, 10V 2.2V @ 250µA 51 nC @ 10 V ±20V 5300 pF @ 15 V - - -55°C ~ 175°C (TJ) Surface Mount
IPD60R380C6

IPD60R380C6

MOSFET N-CH 600V 10.6A TO252-3

Infineon Technologies
2,953 -

RFQ

IPD60R380C6

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF60SC241ARMA1

IRF60SC241ARMA1

MOSFET N-CH 60V 360A TO263-7

Infineon Technologies
3,038 -

RFQ

IRF60SC241ARMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 360A (Tc) 6V, 10V 1.3mOhm @ 100A, 10V 3.7V @ 250µA 388 nC @ 10 V ±20V 16000 pF @ 30 V - 2.4W (Ta), 417W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4020TRLPBF

IRFS4020TRLPBF

MOSFET N-CH 200V 18A D2PAK

Infineon Technologies
3,571 -

RFQ

IRFS4020TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 105mOhm @ 11A, 10V 4.9V @ 100µA 29 nC @ 10 V ±20V 1200 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP023N04NGXKSA1

IPP023N04NGXKSA1

MOSFET N-CH 40V 90A TO220-3

Infineon Technologies
3,371 -

RFQ

IPP023N04NGXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 2.3mOhm @ 90A, 10V 4V @ 95µA 120 nC @ 10 V ±20V 10000 pF @ 20 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA057N06N3GXKSA1

IPA057N06N3GXKSA1

MOSFET N-CH 60V 60A TO220-3-31

Infineon Technologies
3,472 -

RFQ

IPA057N06N3GXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 5.7mOhm @ 60A, 10V 4V @ 58µA 82 nC @ 10 V ±20V 6600 pF @ 30 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD60R600C6BTMA1

IPD60R600C6BTMA1

MOSFET N-CH 600V 7.3A TO252-3

Infineon Technologies
3,867 -

RFQ

IPD60R600C6BTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL3306PBF

IRFSL3306PBF

MOSFET N-CH 60V 120A TO262

Infineon Technologies
2,615 -

RFQ

IRFSL3306PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD60R950C6

IPD60R950C6

MOSFET N-CH 600V 4.4A TO252-3

Infineon Technologies
2,476 -

RFQ

IPD60R950C6

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL60SC216ARMA1

IRL60SC216ARMA1

MOSFET N-CH 60V 324A TO263-7

Infineon Technologies
3,303 -

RFQ

IRL60SC216ARMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 324A (Tc) 4.5V, 10V 1.5mOhm @ 100A, 10V 2.4V @ 250µA 218 nC @ 4.5 V ±20V 16000 pF @ 30 V - 2.4W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R380C6XKSA1

IPP60R380C6XKSA1

MOSFET N-CH 600V 10.6A TO220-3

Infineon Technologies
2,777 -

RFQ

IPP60R380C6XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R600C6XKSA1

IPP60R600C6XKSA1

MOSFET N-CH 600V 7.3A TO220-3

Infineon Technologies
2,458 -

RFQ

IPP60R600C6XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R950C6XKSA1

IPP60R950C6XKSA1

MOSFET N-CH 600V 4.4A TO220-3

Infineon Technologies
75,989 -

RFQ

IPP60R950C6XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA07N60C3XKSA1

SPA07N60C3XKSA1

MOSFET N-CH 650V 7.3A TO220-FP

Infineon Technologies
2,924 -

RFQ

SPA07N60C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 250µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R310CFDXKSA1

IPP65R310CFDXKSA1

MOSFET N-CH 650V 11.4A TO220-3

Infineon Technologies
3,044 -

RFQ

IPP65R310CFDXKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 440µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R360CFD7XKSA1

IPP60R360CFD7XKSA1

MOSFET 600V TO220-3-1

Infineon Technologies
3,617 -

RFQ

IPP60R360CFD7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ CFD7 Active - MOSFET (Metal Oxide) 600 V - - - - - - - - - - Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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