Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP034N08N5AKSA1

IPP034N08N5AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies
3,882 -

RFQ

IPP034N08N5AKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 3.4mOhm @ 100A, 10V 3.8V @ 108µA 87 nC @ 10 V ±20V 6240 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPL65R130C7AUMA1

IPL65R130C7AUMA1

MOSFET N-CH 650V 15A 4VSON

Infineon Technologies
3,691 -

RFQ

IPL65R130C7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 130mOhm @ 4.4A, 10V 4V @ 440µA 35 nC @ 10 V ±20V 1670 pF @ 400 V - 102W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPI024N06N3GXKSA1

IPI024N06N3GXKSA1

MOSFET N-CH 60V 120A TO262-3

Infineon Technologies
2,808 -

RFQ

IPI024N06N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 196µA 275 nC @ 10 V ±20V 23000 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA65R190C7XKSA1

IPA65R190C7XKSA1

MOSFET N-CH 650V 8A TO220-FP

Infineon Technologies
2,760 -

RFQ

IPA65R190C7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 190mOhm @ 5.7A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB083N15N5LFATMA1

IPB083N15N5LFATMA1

MOSFET N-CH 150V 105A D2PAK

Infineon Technologies
2,054 -

RFQ

IPB083N15N5LFATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 8.3mOhm @ 100A, 10V 4.9V @ 134µA 45 nC @ 10 V ±20V 210 pF @ 75 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA80R310CEXKSA2

IPA80R310CEXKSA2

MOSFET N-CH 800V 16.7A TO220-FP

Infineon Technologies
2,972 -

RFQ

IPA80R310CEXKSA2

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 16.7A (Tc) 10V 310mOhm @ 11A, 10V 3.9V @ 1mA 91 nC @ 10 V ±20V 2320 pF @ 100 V - 35W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA65R190CFDXKSA1

IPA65R190CFDXKSA1

MOSFET N-CH 650V 17.5A TO220

Infineon Technologies
3,019 -

RFQ

IPA65R190CFDXKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 730µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP039N10N5AKSA1

IPP039N10N5AKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
3,383 -

RFQ

IPP039N10N5AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3.9mOhm @ 50A, 10V 3.8V @ 125µA 95 nC @ 10 V ±20V 7000 pF @ 50 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPT60R065S7XTMA1

IPT60R065S7XTMA1

MOSFET N-CH 600V 8A 8HSOF

Infineon Technologies
3,277 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™S7 Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 12V 65mOhm @ 8A, 12V 4.5V @ 490µA 51 nC @ 12 V ±20V 1932 pF @ 300 V - 167W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPL60R185CFD7AUMA1

IPL60R185CFD7AUMA1

MOSFET N-CH 600V 14A 4VSON

Infineon Technologies
2,329 -

RFQ

IPL60R185CFD7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 185mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 85W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPW60R190P6FKSA1

IPW60R190P6FKSA1

MOSFET N-CH 600V 20.2A TO247-3

Infineon Technologies
3,814 -

RFQ

IPW60R190P6FKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 7.6A, 10V 4.5V @ 630µ 11 nC @ 10 V ±20V 1750 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R180P7XKSA1

IPW60R180P7XKSA1

MOSFET N-CH 650V 18A TO247-3

Infineon Technologies
2,273 -

RFQ

IPW60R180P7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R520C6XKSA1

IPA60R520C6XKSA1

MOSFET N-CH 600V 8.1A TO220-FP

Infineon Technologies
112,389 -

RFQ

IPA60R520C6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB120N06S402ATMA1

IPB120N06S402ATMA1

MOSFET N-CH 60V 120A TO263-3

Infineon Technologies
3,894 -

RFQ

IPB120N06S402ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 140µA 195 nC @ 10 V ±20V 15750 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB120N06S403ATMA1

IPB120N06S403ATMA1

MOSFET N-CH 60V 120A TO263-3

Infineon Technologies
2,514 -

RFQ

IPB120N06S403ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.8mOhm @ 100A, 10V 4V @ 120µA 160 nC @ 10 V ±20V 13150 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB120N06S4H1ATMA1

IPB120N06S4H1ATMA1

MOSFET N-CH 60V 120A TO263-3

Infineon Technologies
2,889 -

RFQ

IPB120N06S4H1ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.1mOhm @ 100A, 10V 4V @ 200µA 270 nC @ 10 V ±20V 21900 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSB019N03LX G

BSB019N03LX G

MOSFET N-CH 30V 32A/174A 2WDSON

Infineon Technologies
2,545 -

RFQ

BSB019N03LX G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 174A (Tc) 4.5V, 10V 1.9mOhm @ 30A, 10V 2.2V @ 250µA 92 nC @ 10 V ±20V 8400 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSB024N03LX G

BSB024N03LX G

MOSFET N-CH 30V 27A/145A 2WDSON

Infineon Technologies
3,171 -

RFQ

BSB024N03LX G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 145A (Tc) 4.5V, 10V 2.4mOhm @ 30A, 10V 2.2V @ 250µA 72 nC @ 10 V ±20V 4900 pF @ 15 V - 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSB053N03LP G

BSB053N03LP G

MOSFET N-CH 30V 17A/71A 2WDSON

Infineon Technologies
2,219 -

RFQ

BSB053N03LP G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 71A (Tc) 4.5V, 10V 5.3mOhm @ 30A, 10V 2.2V @ 250µA 29 nC @ 10 V ±20V 2700 pF @ 15 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSF053N03LT G

BSF053N03LT G

MOSFET N-CH 30V 16A/71A 2WDSON

Infineon Technologies
3,583 -

RFQ

BSF053N03LT G

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 71A (Tc) 4.5V, 10V 5.3mOhm @ 30A, 10V 2.2V @ 250µA 29 nC @ 10 V ±20V 2700 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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