Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI147N12N3GAKSA1

IPI147N12N3GAKSA1

MOSFET N-CH 120V 56A TO262-3

Infineon Technologies
14,155 -

RFQ

IPI147N12N3GAKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 120 V 56A (Ta) 10V 14.7mOhm @ 56A, 10V 4V @ 61µA 49 nC @ 10 V ±20V 3220 pF @ 60 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI45N06S409AKSA1

IPI45N06S409AKSA1

MOSFET N-CH 60V 45A TO262-3

Infineon Technologies
15,000 -

RFQ

IPI45N06S409AKSA1

Ficha técnica

Tube,Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 10V 9.4mOhm @ 45A, 10V 4V @ 34µA 47 nC @ 10 V ±20V 3785 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7410GTRPBF

IRF7410GTRPBF

MOSFET P-CH 12V 16A 8SO

Infineon Technologies
2,968 -

RFQ

IRF7410GTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 16A (Ta) 1.8V, 4.5V 7mOhm @ 16A, 4.5V 900mV @ 250µA 91 nC @ 4.5 V ±8V 8676 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7413GTRPBF

IRF7413GTRPBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
3,535 -

RFQ

IRF7413GTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 11mOhm @ 7.3A, 10V 3V @ 250µA 79 nC @ 10 V ±20V 1800 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7413ZGTRPBF

IRF7413ZGTRPBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
2,773 -

RFQ

IRF7413ZGTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 10mOhm @ 13A, 10V 2.25V @ 25µA 14 nC @ 4.5 V ±20V 1210 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7416GTRPBF

IRF7416GTRPBF

MOSFET P-CH 30V 10A 8SO

Infineon Technologies
3,260 -

RFQ

IRF7416GTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 20mOhm @ 5.6A, 10V 1V @ 250µA 92 nC @ 10 V ±20V 1700 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD90N06S4L03ATMA1

IPD90N06S4L03ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies
3,982 -

RFQ

IPD90N06S4L03ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.5mOhm @ 90A, 10V 2.2V @ 90µA 170 nC @ 10 V ±16V 13000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90N06S4L05ATMA1

IPD90N06S4L05ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies
2,128 -

RFQ

IPD90N06S4L05ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 4.6mOhm @ 90A, 10V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90N06S4L06ATMA1

IPD90N06S4L06ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies
2,693 -

RFQ

IPD90N06S4L06ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 6.3mOhm @ 90A, 10V 2.2V @ 40µA 75 nC @ 10 V ±16V 5680 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP65R150CFDXKSA2

IPP65R150CFDXKSA2

MOSFET N-CH 650V 22.4A TO220-3

Infineon Technologies
3,313 -

RFQ

IPP65R150CFDXKSA2

Ficha técnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB65R110CFDAATMA1

IPB65R110CFDAATMA1

MOSFET N-CH 650V 31.2A D2PAK

Infineon Technologies
3,276 -

RFQ

IPB65R110CFDAATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPI023NE7N3 G

IPI023NE7N3 G

MOSFET N-CH 75V 120A TO262-3

Infineon Technologies
1,500 -

RFQ

IPI023NE7N3 G

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) - 2.3mOhm @ 100A, 10V 3.8V @ 273µA 206 nC @ 10 V - 14400 pF @ 37.5 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI45N06S4L08AKSA1

IPI45N06S4L08AKSA1

MOSFET N-CH 60V 45A TO262-3

Infineon Technologies
3,081 -

RFQ

IPI45N06S4L08AKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 4.5V, 10V 8.2mOhm @ 45A, 10V 2.2V @ 35µA 64 nC @ 10 V ±16V 4780 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI45P03P4L11AKSA1

IPI45P03P4L11AKSA1

MOSFET P-CH 30V 45A TO262-3

Infineon Technologies
3,327 -

RFQ

IPI45P03P4L11AKSA1

Ficha técnica

Tube OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 11.1mOhm @ 45A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI50R199CPXKSA1

IPI50R199CPXKSA1

MOSFET N-CH 500V 17A TO262-3

Infineon Technologies
13,987 -

RFQ

IPI50R199CPXKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 45 nC @ 10 V ±20V 1800 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB60R070CFD7ATMA1

IPB60R070CFD7ATMA1

MOSFET N-CH 650V 31A TO263-3-2

Infineon Technologies
2,019 -

RFQ

IPB60R070CFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 31A (Tc) 10V 70mOhm @ 15.1A, 10V 4.5V @ 760µA 67 nC @ 10 V ±20V 2721 pF @ 400 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPI60R280C6XKSA1

IPI60R280C6XKSA1

MOSFET N-CH 600V 13.8A TO262-3

Infineon Technologies
6,125 -

RFQ

IPI60R280C6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI60R380C6XKSA1

IPI60R380C6XKSA1

MOSFET N-CH 600V 10.6A TO262-3

Infineon Technologies
3,390 -

RFQ

IPI60R380C6XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI70N10S3L12AKSA1

IPI70N10S3L12AKSA1

MOSFET N-CH 100V 70A TO262-3

Infineon Technologies
14,500 -

RFQ

IPI70N10S3L12AKSA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 12.1mOhm @ 70A, 10V 2.4V @ 83µA 80 nC @ 10 V ±20V 5550 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R190E6FKSA1

IPW60R190E6FKSA1

MOSFET N-CH 600V 20.2A TO247-3

Infineon Technologies
2,369 -

RFQ

IPW60R190E6FKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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