Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7769L2TR1PBF

IRF7769L2TR1PBF

MOSFET N-CH 100V 375A DIRECTFET

Infineon Technologies
2,364 -

RFQ

IRF7769L2TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 375A (Tc) 10V 3.5mOhm @ 74A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 11560 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7779L2TR1PBF

IRF7779L2TR1PBF

MOSFET N-CH 150V 375A DIRECTFET

Infineon Technologies
3,879 -

RFQ

IRF7779L2TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 375A (Tc) 10V 11mOhm @ 40A, 10V 5V @ 250µA 150 nC @ 10 V ±20V 6660 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7799L2TR1PBF

IRF7799L2TR1PBF

MOSFET N-CH 250V 375A DIRECTFET

Infineon Technologies
2,303 -

RFQ

IRF7799L2TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 375A (Tc) 10V 38mOhm @ 21A, 10V 5V @ 250µA 165 nC @ 10 V ±30V 6714 pF @ 25 V - 4.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7815PBF

IRF7815PBF

MOSFET N-CH 150V 5.1A 8SO

Infineon Technologies
3,880 -

RFQ

IRF7815PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 150 V 5.1A (Ta) 10V 43mOhm @ 3.1A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1647 pF @ 75 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9310PBF

IRF9310PBF

MOSFET P-CH 30V 20A 8SO

Infineon Technologies
2,492 -

RFQ

IRF9310PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 4.6mOhm @ 20A, 10V 2.4V @ 100µA 165 nC @ 10 V ±20V 5250 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS83PL6327HTSA1

BSS83PL6327HTSA1

MOSFET P-CH 60V 330MA SOT23-3

Infineon Technologies
3,315 -

RFQ

BSS83PL6327HTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 330mA (Ta) 4.5V, 10V 2Ohm @ 330mA, 10V 2V @ 80µA 3.57 nC @ 10 V ±20V 78 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP086N10N3GXKSA1

IPP086N10N3GXKSA1

MOSFET N-CH 100V 80A TO220-3

Infineon Technologies
2,643 -

RFQ

IPP086N10N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 8.6mOhm @ 73A, 10V 3.5V @ 75µA 55 nC @ 10 V ±20V 3980 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA65R600E6XKSA1

IPA65R600E6XKSA1

MOSFET N-CH 650V 7.3A TO220-FP

Infineon Technologies
3,601 -

RFQ

IPA65R600E6XKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA80R1K0CEXKSA2

IPA80R1K0CEXKSA2

MOSFET N-CH 800V 5.7A TO220-FP

Infineon Technologies
3,062 -

RFQ

IPA80R1K0CEXKSA2

Ficha técnica

Bulk,Tube CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 800 V 5.7A (Tc) 10V 950mOhm @ 3.6A, 10V 3.9V @ 250µA 31 nC @ 10 V ±20V 785 pF @ 100 V - 32W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPL60R185C7AUMA1

IPL60R185C7AUMA1

MOSFET N-CH 600V 13A 4VSON

Infineon Technologies
2,196 -

RFQ

IPL60R185C7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 185mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 77W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFH5250TR2PBF

IRFH5250TR2PBF

MOSFET N-CH 25V 45A PQFN

Infineon Technologies
3,044 -

RFQ

IRFH5250TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 45A (Ta), 100A (Tc) - 1.15mOhm @ 50A, 10V 2.35V @ 150µA 110 nC @ 10 V - 7174 pF @ 13 V - - - Surface Mount
IRFH5300TR2PBF

IRFH5300TR2PBF

MOSFET N-CH 30V 40A PQFN

Infineon Technologies
3,857 -

RFQ

IRFH5300TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta), 100A (Tc) - 1.4mOhm @ 50A, 10V 2.35V @ 150µA 120 nC @ 10 V - 7200 pF @ 15 V - - - Surface Mount
BSC014N03LSGATMA1

BSC014N03LSGATMA1

MOSFET N-CH 30V 34A/100A TDSON

Infineon Technologies
2,641 -

RFQ

BSC014N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 34A (Ta), 100A (Tc) 4.5V, 10V 1.4mOhm @ 30A, 10V 2.2V @ 250µA 131 nC @ 10 V ±20V 10000 pF @ 15 V - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC017N04NSGATMA1

BSC017N04NSGATMA1

MOSFET N-CH 40V 30A/100A TDSON

Infineon Technologies
2,456 -

RFQ

BSC017N04NSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 30A (Ta), 100A (Tc) 10V 1.7mOhm @ 50A, 10V 4V @ 85µA 108 nC @ 10 V ±20V 8800 pF @ 20 V - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSL202SNL6327HTSA1

BSL202SNL6327HTSA1

MOSFET N-CH 20V 7.5A TSOP-6

Infineon Technologies
2,357 -

RFQ

BSL202SNL6327HTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 7.5A (Ta) 2.5V, 4.5V 22mOhm @ 7.5A, 4.5V 1.2V @ 30µA 8.7 nC @ 4.5 V ±12V 1147 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSO130N03MSGXUMA1

BSO130N03MSGXUMA1

MOSFET N-CH 30V 9A 8DSO

Infineon Technologies
2,420 -

RFQ

BSO130N03MSGXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 13mOhm @ 11.1A, 10V 2V @ 250µA 17 nC @ 10 V ±20V 1300 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSB165N15NZ3GXUMA1

BSB165N15NZ3GXUMA1

MOSFET N-CH 150V 9A/45A 2WDSON

Infineon Technologies
17,058 -

RFQ

BSB165N15NZ3GXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 9A (Ta), 45A (Tc) 8V, 10V 16.5mOhm @ 30A, 10V 4V @ 110µA 35 nC @ 10 V ±20V 2800 pF @ 75 V - 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPA60R360P7XKSA1

IPA60R360P7XKSA1

MOSFET N-CHANNEL 650V 9A TO220

Infineon Technologies
3,563 -

RFQ

IPA60R360P7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 22W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB65R190CFDATMA1

IPB65R190CFDATMA1

MOSFET N-CH 650V 17.5A D2PAK

Infineon Technologies
2,350 -

RFQ

IPB65R190CFDATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 730µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSS215PL6327HTSA1

BSS215PL6327HTSA1

MOSFET P-CH 20V 1.5A SOT23-3

Infineon Technologies
3,025 -

RFQ

BSS215PL6327HTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 150mOhm @ 1.5A, 4.5V 1.2V @ 11µA 3.6 nC @ 4.5 V ±12V 346 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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