Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFH7545TRPBF

IRFH7545TRPBF

MOSFET N-CH 60V 85A PQFN

Infineon Technologies
2,270 -

RFQ

IRFH7545TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 85A (Tc) 6V, 10V 5.2mOhm @ 51A, 10V 3.7V @ 100µA 110 nC @ 10 V ±20V 3890 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50N06S409ATMA2

IPD50N06S409ATMA2

MOSFET N-CH 60V 50A TO252-31

Infineon Technologies
2,681 -

RFQ

IPD50N06S409ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 9mOhm @ 50A, 10V 4V @ 34µA 47.1 nC @ 10 V ±20V 3785 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC025N03MSGATMA1

BSC025N03MSGATMA1

MOSFET N-CH 30V 100A TDSON-8

Infineon Technologies
3,840 -

RFQ

BSC025N03MSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta). 100A (Tc) 4.5V, 10V 2.5mOhm @ 30A, 10V 2V @ 250µA 98 nC @ 10 V ±20V 7600 pF @ 15 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50P04P4L11ATMA1

IPD50P04P4L11ATMA1

MOSFET P-CH 40V 50A TO252-3

Infineon Technologies
3,836 -

RFQ

IPD50P04P4L11ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, OptiMOS™-P2 Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 10.6mOhm @ 50A, 10V 2.2V @ 85µA 59 nC @ 10 V ±16V 3900 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50P04P413ATMA1

IPD50P04P413ATMA1

MOSFET P-CH 40V 50A TO252-3

Infineon Technologies
3,411 -

RFQ

IPD50P04P413ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 12.6mOhm @ 50A, 10V 4V @ 85µA 51 nC @ 10 V ±20V 3670 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPS70R1K4P7SAKMA1

IPS70R1K4P7SAKMA1

MOSFET N-CH 700V 4A TO251-3

Infineon Technologies
2,163 -

RFQ

IPS70R1K4P7SAKMA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.4Ohm @ 700mA, 10V 3.5V @ 40µA 4.7 nC @ 10 V ±16V 158 pF @ 400 V - 22.7W (Tc) -40°C ~ 150°C (TJ) Through Hole
BSZ035N03LSGATMA1

BSZ035N03LSGATMA1

MOSFET N-CH 30V 20A/40A 8TSDSON

Infineon Technologies
2,016 -

RFQ

BSZ035N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 40A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2.2V @ 250µA 56 nC @ 10 V ±20V 4400 pF @ 15 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD80R2K7C3AATMA1

IPD80R2K7C3AATMA1

MOSFET N-CH TO252-3

Infineon Technologies
3,003 -

RFQ

IPD80R2K7C3AATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 2.7Ohm @ 1.2A, 10V 3.9V @ 250µA 1.5 nC @ 10 V ±20V 290 pF @ 100 V - 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSZ037N06LS5ATMA1

BSZ037N06LS5ATMA1

MOSFET N-CH 60V 18A/40A TSDSON

Infineon Technologies
3,900 -

RFQ

BSZ037N06LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta), 40A (Tc) 4.5V, 10V 3.7mOhm @ 20A, 10V 2.3V @ 36µA 47 nC @ 10 V ±20V 3100 pF @ 30 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB057N06NATMA1

IPB057N06NATMA1

MOSFET N-CH 60V 17A/45A D2PAK

Infineon Technologies
2,493 -

RFQ

IPB057N06NATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 45A (Tc) 6V, 10V 5.7mOhm @ 45A, 10V 2.8V @ 36µA 27 nC @ 10 V ±20V 2000 pF @ 30 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90N06S405ATMA2

IPD90N06S405ATMA2

MOSFET N-CH 60V 90A TO252-31

Infineon Technologies
2,808 -

RFQ

IPD90N06S405ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 5.1mOhm @ 90A, 10V 4V @ 60µA 81 nC @ 10 V ±20V 6500 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD95R1K2P7ATMA1

IPD95R1K2P7ATMA1

MOSFET N-CH 950V 6A TO252-3

Infineon Technologies
2,163 -

RFQ

IPD95R1K2P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 6A (Tc) 10V 1.2Ohm @ 2.7A, 10V 3.5V @ 140µA 15 nC @ 10 V ±20V 478 pF @ 400 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPL60R650P6SATMA1

IPL60R650P6SATMA1

MOSFET N-CH 600V 6.7A 8THINPAK

Infineon Technologies
3,696 -

RFQ

IPL60R650P6SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P6 Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 6.7A (Tc) 10V 650mOhm @ 2.4A, 10V 4.5V @ 200µA 12 nC @ 10 V ±20V 557 pF @ 100 V - 56.8W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSC019N04NSGATMA1

BSC019N04NSGATMA1

MOSFET N-CH 40V 30A/100A TDSON

Infineon Technologies
3,988 -

RFQ

BSC019N04NSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Ta), 100A (Tc) 10V 1.9mOhm @ 50A, 10V 4V @ 85µA 108 nC @ 10 V ±20V 8800 pF @ 20 V - 2.5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA50R950CEXKSA2

IPA50R950CEXKSA2

MOSFET N-CH 500V 3.7A TO220

Infineon Technologies
2,288 -

RFQ

IPA50R950CEXKSA2

Ficha técnica

Bulk,Tube CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 3.7A (Tc) 13V 950mOhm @ 1.2A, 13V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 231 pF @ 100 V - 25.7W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPSA70R600P7SAKMA1

IPSA70R600P7SAKMA1

MOSFET N-CH 700V 8.5A TO251-3

Infineon Technologies
25,800 -

RFQ

IPSA70R600P7SAKMA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 1.8A, 10V 3.5V @ 90µA 10.5 nC @ 400 V ±16V 364 pF @ 400 V - 43.1W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRLR3636TRLPBF

IRLR3636TRLPBF

MOSFET N-CH 60V 50A DPAK

Infineon Technologies
3,704 -

RFQ

IRLR3636TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90N04S402ATMA1

IPD90N04S402ATMA1

MOSFET N-CH 40V 90A TO252-3

Infineon Technologies
2,640 -

RFQ

IPD90N04S402ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 2.4mOhm @ 90A, 10V 4V @ 95µA 118 nC @ 10 V ±20V 9430 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1404ZGPBF

IRF1404ZGPBF

MOSFET N-CH 40V 180A TO220AB

Infineon Technologies
2,487 -

RFQ

IRF1404ZGPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 220W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB3004GPBF

IRFB3004GPBF

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies
2,815 -

RFQ

IRFB3004GPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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