Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPU135N08N3 G

IPU135N08N3 G

MOSFET N-CH 80V 50A TO251-3

Infineon Technologies
3,597 -

RFQ

IPU135N08N3 G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 50A (Tc) 6V, 10V 13.5mOhm @ 50A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1730 pF @ 40 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU64CN10N G

IPU64CN10N G

MOSFET N-CH 100V 17A TO251-3

Infineon Technologies
3,509 -

RFQ

IPU64CN10N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 64mOhm @ 17A, 10V 4V @ 20µA 9 nC @ 10 V ±20V 569 pF @ 50 V - 44W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU78CN10N G

IPU78CN10N G

MOSFET N-CH 100V 13A TO251-3

Infineon Technologies
2,751 -

RFQ

IPU78CN10N G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 78mOhm @ 13A, 10V 4V @ 12µA 11 nC @ 10 V ±20V 716 pF @ 50 V - 31W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW50R199CPFKSA1

IPW50R199CPFKSA1

MOSFET N-CH 550V 17A TO247-3

Infineon Technologies
3,229 -

RFQ

IPW50R199CPFKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 550 V 17A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 45 nC @ 10 V ±20V 1800 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW50R299CPFKSA1

IPW50R299CPFKSA1

MOSFET N-CH 550V 12A TO247-3

Infineon Technologies
3,893 -

RFQ

IPW50R299CPFKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 550 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW50R350CPFKSA1

IPW50R350CPFKSA1

MOSFET N-CH 550V 10A TO247-3

Infineon Technologies
3,778 -

RFQ

IPW50R350CPFKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 550 V 10A (Tc) 10V 350mOhm @ 5.6A, 10V 3.5V @ 370µA 25 nC @ 10 V ±20V 1020 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW50R399CPFKSA1

IPW50R399CPFKSA1

MOSFET N-CH 560V 9A TO247-3

Infineon Technologies
5,520 -

RFQ

IPW50R399CPFKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 9A (Tc) 10V 399mOhm @ 4.9A, 10V 3.5V @ 330µA 23 nC @ 10 V ±20V 890 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R250CP

IPW60R250CP

MOSFET N-CH 650V 12A TO247-3

Infineon Technologies
10,800 -

RFQ

IPW60R250CP

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 250mOhm @ 7.8A, 10V 3.5V @ 440µA 35 nC @ 10 V ±20V 1200 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW90R1K0C3FKSA1

IPW90R1K0C3FKSA1

MOSFET N-CH 900V 5.7A TO247-3

Infineon Technologies
3,212 -

RFQ

IPW90R1K0C3FKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.7A (Tc) 10V 1Ohm @ 3.3A, 10V 3.5V @ 370µA 34 nC @ 10 V ±20V 850 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW90R1K2C3FKSA1

IPW90R1K2C3FKSA1

MOSFET N-CH 900V 5.1A TO247-3

Infineon Technologies
2,727 -

RFQ

IPW90R1K2C3FKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V 3.5V @ 310µA 28 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW90R340C3FKSA1

IPW90R340C3FKSA1

MOSFET N-CH 900V 15A TO247-3

Infineon Technologies
3,997 -

RFQ

IPW90R340C3FKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW90R500C3FKSA1

IPW90R500C3FKSA1

MOSFET N-CH 900V 11A TO247-3

Infineon Technologies
3,805 -

RFQ

IPW90R500C3FKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW90R800C3FKSA1

IPW90R800C3FKSA1

MOSFET N-CH 900V 6.9A TO247-3

Infineon Technologies
3,036 -

RFQ

IPW90R800C3FKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SN7002NL6433HTMA1

SN7002NL6433HTMA1

MOSFET N-CH 60V 200MA SOT23-3

Infineon Technologies
3,762 -

RFQ

SN7002NL6433HTMA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SN7002W L6327

SN7002W L6327

MOSFET N-CH 60V 230MA SOT323-3

Infineon Technologies
3,704 -

RFQ

SN7002W L6327

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 230mA (Ta) 4.5V, 10V 5Ohm @ 230mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SN7002W L6433

SN7002W L6433

MOSFET N-CH 60V 230MA SOT323-3

Infineon Technologies
3,233 -

RFQ

SN7002W L6433

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 230mA (Ta) 4.5V, 10V 5Ohm @ 230mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPA07N60CFDXKSA1

SPA07N60CFDXKSA1

MOSFET N-CH 650V 6.6A TO220-FP

Infineon Technologies
3,054 -

RFQ

SPA07N60CFDXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6.6A (Tc) 10V 700mOhm @ 4.6A, 10V 5V @ 300µA 47 nC @ 10 V ±20V 790 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA15N65C3XKSA1

SPA15N65C3XKSA1

MOSFET N-CH 650V 15A TO220-3

Infineon Technologies
3,572 -

RFQ

SPA15N65C3XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1600 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPD30N03S2L10GBTMA1

SPD30N03S2L10GBTMA1

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies
2,696 -

RFQ

SPD30N03S2L10GBTMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 10mOhm @ 30A, 10V 2V @ 50µA 41.8 nC @ 10 V ±20V 1550 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP07N60CFDHKSA1

SPP07N60CFDHKSA1

MOSFET N-CH 650V 6.6A TO220-3

Infineon Technologies
2,767 -

RFQ

SPP07N60CFDHKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6.6A (Tc) 10V 700mOhm @ 4.6A, 10V 5V @ 300µA 47 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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