Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP50R520CPHKSA1

IPP50R520CPHKSA1

MOSFET N-CH 550V 7.1A TO220-3

Infineon Technologies
3,557 -

RFQ

IPP50R520CPHKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 550 V 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 680 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R099CPAAKSA1

IPP60R099CPAAKSA1

MOSFET N-CH 600V 31A TO220-3

Infineon Technologies
2,665 -

RFQ

IPP60R099CPAAKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 105mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPP60R520CPXKSA1

IPP60R520CPXKSA1

MOSFET N-CH 650V 6.8A TO220-3

Infineon Technologies
2,657 -

RFQ

IPP60R520CPXKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6.8A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 340µA 31 nC @ 10 V ±20V 630 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R600CPXKSA1

IPP60R600CPXKSA1

MOSFET N-CH 600V 6.1A TO220-3

Infineon Technologies
3,288 -

RFQ

IPP60R600CPXKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.1A (Tc) 10V 600mOhm @ 3.3A, 10V 3.5V @ 220µA 27 nC @ 10 V ±20V 550 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP70N04S307AKSA1

IPP70N04S307AKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies
2,470 -

RFQ

IPP70N04S307AKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 6.5mOhm @ 70A, 10V 4V @ 50µA 40 nC @ 10 V ±20V 2700 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP70N10S312AKSA1

IPP70N10S312AKSA1

MOSFET N-CH 100V 70A TO220-3

Infineon Technologies
6,260 -

RFQ

IPP70N10S312AKSA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 10V 11.6mOhm @ 70A, 10V 4V @ 83µA 66 nC @ 10 V ±20V 4355 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP70N10SL16AKSA1

IPP70N10SL16AKSA1

MOSFET N-CH 100V 70A TO220-3

Infineon Technologies
1,405 -

RFQ

IPP70N10SL16AKSA1

Ficha técnica

Bulk,Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 16mOhm @ 50A, 10V 2V @ 2mA 240 nC @ 10 V ±20V 4540 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP77N06S212AKSA1

IPP77N06S212AKSA1

MOSFET N-CH 55V 77A TO220-3

Infineon Technologies
2,486 -

RFQ

IPP77N06S212AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 77A (Tc) 10V 12mOhm @ 38A, 10V 4V @ 93µA 60 nC @ 10 V ±20V 1770 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N03S4L04AKSA1

IPP80N03S4L04AKSA1

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies
3,018 -

RFQ

IPP80N03S4L04AKSA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.7mOhm @ 80A, 10V 2.2V @ 45µA 75 nC @ 10 V ±16V 5100 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPC70N04S5L4R2ATMA1

IPC70N04S5L4R2ATMA1

MOSFET N-CH 40V 70A 8TDSON-34

Infineon Technologies
2,639 -

RFQ

IPC70N04S5L4R2ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 4.5V, 10V 4.2mOhm @ 35A, 10V 2V @ 17µA 30 nC @ 10 V ±16V 1600 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP80N04S204AKSA1

IPP80N04S204AKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies
3,633 -

RFQ

IPP80N04S204AKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N04S2H4AKSA1

IPP80N04S2H4AKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies
3,110 -

RFQ

IPP80N04S2H4AKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N04S2L03AKSA1

IPP80N04S2L03AKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies
13,547 -

RFQ

IPP80N04S2L03AKSA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 3.4mOhm @ 80A, 10V 2V @ 250µA 213 nC @ 10 V ±20V 6000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N04S303AKSA1

IPP80N04S303AKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies
500 -

RFQ

IPP80N04S303AKSA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.5mOhm @ 80A, 10V 4V @ 120µA 110 nC @ 10 V ±20V 7300 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N04S3-04

IPP80N04S3-04

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies
2,650 -

RFQ

IPP80N04S3-04

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.1mOhm @ 80A, 10V 4V @ 90µA 80 nC @ 10 V ±20V 5200 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N04S306AKSA1

IPP80N04S306AKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies
5,500 -

RFQ

IPP80N04S306AKSA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 52µA 47 nC @ 10 V ±20V 3250 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S205AKSA1

IPP80N06S205AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
3,922 -

RFQ

IPP80N06S205AKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.1mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5110 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S207AKSA1

IPP80N06S207AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
9,500 -

RFQ

IPP80N06S207AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.6mOhm @ 68A, 10V 4V @ 180µA 110 nC @ 10 V ±20V 3400 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S208AKSA1

IPP80N06S208AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
3,659 -

RFQ

IPP80N06S208AKSA1

Ficha técnica

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 58A, 10V 4V @ 150µA 96 nC @ 10 V ±20V 2860 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S209AKSA1

IPP80N06S209AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
2,528 -

RFQ

IPP80N06S209AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 9.1mOhm @ 50A, 10V 4V @ 125µA 80 nC @ 10 V ±20V 2360 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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