Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI80N03S4L04AKSA1

IPI80N03S4L04AKSA1

MOSFET N-CH 30V 80A TO262-3

Infineon Technologies
3,321 -

RFQ

IPI80N03S4L04AKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.7mOhm @ 80A, 10V 2.2V @ 45µA 75 nC @ 10 V ±16V 5100 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N04S204AKSA1

IPI80N04S204AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies
3,335 -

RFQ

IPI80N04S204AKSA1

Ficha técnica

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N04S2H4AKSA1

IPI80N04S2H4AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies
2,713 -

RFQ

IPI80N04S2H4AKSA1

Ficha técnica

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N04S303AKSA1

IPI80N04S303AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies
164,000 -

RFQ

IPI80N04S303AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.5mOhm @ 80A, 10V 4V @ 120µA 110 nC @ 10 V ±20V 7300 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N04S304AKSA1

IPI80N04S304AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies
3,560 -

RFQ

IPI80N04S304AKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.1mOhm @ 80A, 10V 4V @ 90µA 80 nC @ 10 V ±20V 5200 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N04S306AKSA1

IPI80N04S306AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies
3,660 -

RFQ

IPI80N04S306AKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 52µA 47 nC @ 10 V ±20V 3250 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S207AKSA1

IPI80N06S207AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
3,000 -

RFQ

IPI80N06S207AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.6mOhm @ 68A, 10V 4V @ 180µA 110 nC @ 10 V ±20V 3400 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S208AKSA1

IPI80N06S208AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
3,622 -

RFQ

IPI80N06S208AKSA1

Ficha técnica

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 58A, 10V 4V @ 150µA 96 nC @ 10 V ±20V 2860 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S2L05AKSA1

IPI80N06S2L05AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
3,131 -

RFQ

IPI80N06S2L05AKSA1

Ficha técnica

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 4.8mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S2L11AKSA1

IPI80N06S2L11AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
2,787 -

RFQ

IPI80N06S2L11AKSA1

Ficha técnica

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 11mOhm @ 60A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N08S207AKSA1

IPI80N08S207AKSA1

MOSFET N-CH 75V 80A TO262-3

Infineon Technologies
2,544 -

RFQ

IPI80N08S207AKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI90R1K0C3XKSA1

IPI90R1K0C3XKSA1

MOSFET N-CH 900V 5.7A TO262-3

Infineon Technologies
2,360 -

RFQ

IPI90R1K0C3XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.7A (Tc) 10V 1Ohm @ 3.3A, 10V 3.5V @ 370µA 34 nC @ 10 V ±20V 850 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90R1K2C3XKSA1

IPI90R1K2C3XKSA1

MOSFET N-CH 900V 5.1A TO262-3

Infineon Technologies
2,166 -

RFQ

IPI90R1K2C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V 3.5V @ 310µA 28 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90R340C3XKSA1

IPI90R340C3XKSA1

MOSFET N-CH 900V 15A TO262-3

Infineon Technologies
3,749 -

RFQ

IPI90R340C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90R500C3XKSA1

IPI90R500C3XKSA1

MOSFET N-CH 900V 11A TO262-3

Infineon Technologies
2,249 -

RFQ

IPI90R500C3XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90R800C3XKSA1

IPI90R800C3XKSA1

MOSFET N-CH 900V 6.9A TO262-3

Infineon Technologies
16,500 -

RFQ

IPI90R800C3XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP05CN10L G

IPP05CN10L G

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
3,996 -

RFQ

IPP05CN10L G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 5.1mOhm @ 100A, 10V 2.4V @ 250µA 163 nC @ 10 V ±20V 15600 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP06CN10LGXKSA1

IPP06CN10LGXKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
3,236 -

RFQ

IPP06CN10LGXKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 6.2mOhm @ 100A, 10V 2.4V @ 180µA 124 nC @ 10 V ±20V 11900 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP070N08N3 G

IPP070N08N3 G

MOSFET N-CH 80V 80A TO220-3

Infineon Technologies
2,189 -

RFQ

IPP070N08N3 G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 7mOhm @ 73A, 10V 3.5V @ 73µA 56 nC @ 10 V ±20V 3840 pF @ 40 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFH7914TRPBF

IRFH7914TRPBF

MOSFET N-CH 30V 15A/35A 8PQFN

Infineon Technologies
3,442 -

RFQ

IRFH7914TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 35A (Tc) 4.5V, 10V 8.7mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1160 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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