Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP80N06S2H5AKSA1

IPP80N06S2H5AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
3,665 -

RFQ

IPP80N06S2H5AKSA1

Ficha técnica

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.5mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2L05AKSA1

IPP80N06S2L05AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
25,938 -

RFQ

IPP80N06S2L05AKSA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 4.8mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2L06AKSA1

IPP80N06S2L06AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
19,000 -

RFQ

IPP80N06S2L06AKSA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 6.3mOhm @ 69A, 10V 2V @ 180µA 150 nC @ 10 V ±20V 3800 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2L-07

IPP80N06S2L-07

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
2,740 -

RFQ

IPP80N06S2L-07

Ficha técnica

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 2V @ 150µA 130 nC @ 10 V ±20V 3160 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2L09AKSA1

IPP80N06S2L09AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
2,705 -

RFQ

IPP80N06S2L09AKSA1

Ficha técnica

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 8.5mOhm @ 52A, 10V 2V @ 125µA 105 nC @ 10 V ±20V 2620 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2L11AKSA1

IPP80N06S2L11AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
3,306 -

RFQ

IPP80N06S2L11AKSA1

Ficha técnica

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 11mOhm @ 60A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S2LH5AKSA1

IPP80N06S2LH5AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
2,416 -

RFQ

IPP80N06S2LH5AKSA1

Ficha técnica

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 5mOhm @ 80A, 10V 2V @ 250µA 190 nC @ 10 V ±20V 5000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP90R1K0C3XKSA1

IPP90R1K0C3XKSA1

MOSFET N-CH 900V 5.7A TO220-3

Infineon Technologies
2,162 -

RFQ

IPP90R1K0C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.7A (Tc) 10V 1Ohm @ 3.3A, 10V 3.5V @ 370µA 34 nC @ 10 V ±20V 850 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP90R1K2C3XKSA1

IPP90R1K2C3XKSA1

MOSFET N-CH 900V 5.1A TO220-3

Infineon Technologies
3,561 -

RFQ

IPP90R1K2C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V 3.5V @ 310µA 28 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP90R340C3XKSA1

IPP90R340C3XKSA1

MOSFET N-CH 900V 15A TO220-3

Infineon Technologies
3,320 -

RFQ

IPP90R340C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP90R500C3XKSA1

IPP90R500C3XKSA1

MOSFET N-CH 900V 11A TO220-3

Infineon Technologies
3,918 -

RFQ

IPP90R500C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP90R800C3XKSA1

IPP90R800C3XKSA1

MOSFET N-CH 900V 6.9A TO220-3

Infineon Technologies
3,629 -

RFQ

IPP90R800C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPS075N03LGAKMA1

IPS075N03LGAKMA1

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies
21,184 -

RFQ

IPS075N03LGAKMA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7.5mOhm @ 30A, 10V 2.2V @ 250µA 18 nC @ 10 V ±20V 1900 pF @ 15 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS12CN10LGBKMA1

IPS12CN10LGBKMA1

MOSFET N-CH 100V 69A TO251-3

Infineon Technologies
2,391 -

RFQ

IPS12CN10LGBKMA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 69A (Tc) 4.5V, 10V 11.8mOhm @ 69A, 10V 2.4V @ 83µA 58 nC @ 10 V ±20V 5600 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS50R520CP

IPS50R520CP

MOSFET N-CH 550V 7.1A TO251-3

Infineon Technologies
6,880 -

RFQ

IPS50R520CP

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 550 V 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 680 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU075N03L G

IPU075N03L G

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies
3,066 -

RFQ

IPU075N03L G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7.5mOhm @ 30A, 10V 2.2V @ 250µA 18 nC @ 10 V ±20V 1900 pF @ 15 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU103N08N3 G

IPU103N08N3 G

MOSFET N-CH 80V 50A TO251-3

Infineon Technologies
2,159 -

RFQ

IPU103N08N3 G

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 50A (Tc) 6V, 10V 10.3mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2410 pF @ 40 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD80R4K5P7ATMA1

IPD80R4K5P7ATMA1

MOSFET N-CH 800V 1.5A TO252

Infineon Technologies
3,909 -

RFQ

IPD80R4K5P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 1.5A (Tc) 10V 4.5Ohm @ 400mA, 10V 3.5V @ 200µA 4 nC @ 10 V ±20V 80 pF @ 500 V Super Junction 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC057N03LSGATMA1

BSC057N03LSGATMA1

MOSFET N-CH 30V 17A/71A TDSON

Infineon Technologies
3,611 -

RFQ

BSC057N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 71A (Tc) 4.5V, 10V 5.7mOhm @ 30A, 10V 2.2V @ 250µA 30 nC @ 10 V ±20V 2400 pF @ 15 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPN60R600P7SATMA1

IPN60R600P7SATMA1

MOSFET N-CHANNEL 600V 6A SOT223

Infineon Technologies
2,756 -

RFQ

IPN60R600P7SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 7W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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