Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPP08P06PHXKSA1

SPP08P06PHXKSA1

MOSFET P-CH 60V 8.8A TO220-3

Infineon Technologies
3,744 -

RFQ

SPP08P06PHXKSA1

Ficha técnica

Bulk,Tube SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 300mOhm @ 6.2A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 420 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP15N60CFDHKSA1

SPP15N60CFDHKSA1

MOSFET N-CH 650V 13.4A TO220-3

Infineon Technologies
2,419 -

RFQ

SPP15N60CFDHKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.4A (Tc) 10V 330mOhm @ 9.4A, 10V 5V @ 750µA 84 nC @ 10 V ±20V 1820 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP15N65C3HKSA1

SPP15N65C3HKSA1

MOSFET N-CH 650V 15A TO220-3

Infineon Technologies
2,864 -

RFQ

SPP15N65C3HKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1600 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF1324SPBF

IRF1324SPBF

MOSFET N-CH 24V 195A D2PAK

Infineon Technologies
2,721 -

RFQ

IRF1324SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6218SPBF

IRF6218SPBF

MOSFET P-CH 150V 27A D2PAK

Infineon Technologies
2,417 -

RFQ

IRF6218SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) - Surface Mount
BSC042N03MSGATMA1

BSC042N03MSGATMA1

MOSFET N-CH 30V 17A/93A TDSON

Infineon Technologies
3,260 -

RFQ

BSC042N03MSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 93A (Tc) 4.5V, 10V 4.2mOhm @ 30A, 10V 2V @ 250µA 55 nC @ 10 V ±20V 4300 pF @ 15 V - 2.5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPP15P10PGHKSA1

SPP15P10PGHKSA1

MOSFET P-CH 100V 15A TO220-3

Infineon Technologies
3,923 -

RFQ

SPP15P10PGHKSA1

Ficha técnica

Tube SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 10V 240mOhm @ 10.6A, 10V 2.1V @ 1.54mA 48 nC @ 10 V ±20V 1280 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP15P10PLGHKSA1

SPP15P10PLGHKSA1

MOSFET P-CH 100V 15A TO220-3

Infineon Technologies
2,364 -

RFQ

SPP15P10PLGHKSA1

Ficha técnica

Tube SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4.5V, 10V 200mOhm @ 11.3A, 10V 2V @ 1.54mA 62 nC @ 10 V ±20V 1490 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP24N60CFDHKSA1

SPP24N60CFDHKSA1

MOSFET N-CH 650V 21.7A TO220-3

Infineon Technologies
2,051 -

RFQ

SPP24N60CFDHKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 21.7A (Tc) 10V 185mOhm @ 15.4A, 10V 5V @ 1.2mA 143 nC @ 10 V ±20V 3160 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPS01N60C3

SPS01N60C3

MOSFET N-CH 650V 800MA TO251-3

Infineon Technologies
43,500 -

RFQ

SPS01N60C3

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 800mA (Tc) 10V 6Ohm @ 500mA, 10V 3.9V @ 250µA 5 nC @ 10 V ±20V 100 pF @ 25 V - 11W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPS02N60C3

SPS02N60C3

MOSFET N-CH 650V 1.8A TO251-3

Infineon Technologies
975 -

RFQ

SPS02N60C3

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5 nC @ 10 V ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPS03N60C3BKMA1

SPS03N60C3BKMA1

MOSFET N-CH 650V 3.2A TO251-3

Infineon Technologies
3,162 -

RFQ

SPS03N60C3BKMA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPS04N60C3BKMA1

SPS04N60C3BKMA1

MOSFET N-CH 650V 4.5A TO251-3

Infineon Technologies
15,000 -

RFQ

SPS04N60C3BKMA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 25 nC @ 10 V ±20V 490 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPU03N60C3BKMA1

SPU03N60C3BKMA1

MOSFET N-CH 650V 3.2A TO251-3

Infineon Technologies
3,658 -

RFQ

SPU03N60C3BKMA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW07N60CFDFKSA1

SPW07N60CFDFKSA1

MOSFET N-CH 650V 6.6A TO247-3

Infineon Technologies
2,805 -

RFQ

SPW07N60CFDFKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6.6A (Tc) 10V 700mOhm @ 4.6A, 10V 5V @ 300µA 47 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW15N60CFDFKSA1

SPW15N60CFDFKSA1

MOSFET N-CH 650V 13.4A TO247-3

Infineon Technologies
720 -

RFQ

SPW15N60CFDFKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.4A (Tc) 10V 330mOhm @ 9.4A, 10V 5V @ 750µA 84 nC @ 10 V ±20V 1820 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD60R650CEAUMA1

IPD60R650CEAUMA1

CONSUMER

Infineon Technologies
2,660 -

RFQ

IPD60R650CEAUMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 9.9A (Tc) 10V 650mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 82W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPN50R1K4CEATMA1

IPN50R1K4CEATMA1

MOSFET N-CH 500V 4.8A SOT223

Infineon Technologies
3,000 -

RFQ

IPN50R1K4CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 4.8A (Tc) 13V 1.4Ohm @ 900mA, 13V 3.5V @ 70µA 8.2 nC @ 10 V ±20V 178 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF8734PBF

IRF8734PBF

MOSFET N-CH 30V 21A 8SO

Infineon Technologies
3,041 -

RFQ

IRF8734PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.5mOhm @ 21A, 10V 2.35V @ 50µA 30 nC @ 4.5 V ±20V 3175 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS3004-7PPBF

IRFS3004-7PPBF

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
2,691 -

RFQ

IRFS3004-7PPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.25mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9130 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 8399 Record«Prev1... 191192193194195196197198...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário