Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFSL4115PBF

IRFSL4115PBF

MOSFET N-CH 150V 195A TO262

Infineon Technologies
3,576 -

RFQ

IRFSL4115PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 195A (Tc) 10V 12.1mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4615PBF

IRFSL4615PBF

MOSFET N-CH 150V 33A TO262

Infineon Technologies
3,069 -

RFQ

IRFSL4615PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLSL3034PBF

IRLSL3034PBF

MOSFET N-CH 40V 195A TO262

Infineon Technologies
2,616 -

RFQ

IRLSL3034PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.7mOhm @ 195A, 10V 2.5V @ 250µA 162 nC @ 4.5 V ±20V 10315 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1324STRLPBF

IRF1324STRLPBF

MOSFET N-CH 24V 195A D2PAK

Infineon Technologies
3,872 -

RFQ

IRF1324STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6717MTR1PBF

IRF6717MTR1PBF

MOSFET N-CH 25V 38A DIRECTFET

Infineon Technologies
3,515 -

RFQ

IRF6717MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 38A (Ta), 200A (Tc) 4.5V, 10V 1.25mOhm @ 38A, 10V 2.35V @ 150µA 69 nC @ 4.5 V ±20V 6750 pF @ 13 V - 2.8W (Ta), 96W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6729MTR1PBF

IRF6729MTR1PBF

MOSFET N-CH 30V 31A DIRECTFET

Infineon Technologies
3,956 -

RFQ

IRF6729MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 31A (Ta), 190A (Tc) 4.5V, 10V 1.8mOhm @ 31A, 10V 2.35V @ 150µA 63 nC @ 4.5 V ±20V 6030 pF @ 15 V - 2.8W (Ta), 104W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFH3702TR2PBF

IRFH3702TR2PBF

MOSFET N-CH 30V 16A 8PQFN

Infineon Technologies
3,236 -

RFQ

IRFH3702TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 42A (Tc) - 7.1mOhm @ 16A, 10V 2.35V @ 25µA 14 nC @ 4.5 V - 1510 pF @ 15 V - - - Surface Mount
IRFH3707TR2PBF

IRFH3707TR2PBF

MOSFET N-CH 30V 12A/29A 8PQFN

Infineon Technologies
2,314 -

RFQ

IRFH3707TR2PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 29A (Tc) 4.5V, 10V 12.4mOhm @ 12A, 10V 2.35V @ 25µA 8.1 nC @ 4.5 V ±20V 755 pF @ 15 V - 2.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH5053TR2PBF

IRFH5053TR2PBF

MOSFET N-CH 100V 9.3A PQFN56

Infineon Technologies
3,862 -

RFQ

IRFH5053TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.3A (Ta), 46A (Tc) - 18mOhm @ 9.3A, 10V 4.9V @ 100µA 36 nC @ 10 V - 1510 pF @ 50 V - - - Surface Mount
IRFH7914TR2PBF

IRFH7914TR2PBF

MOSFET N-CH 30V 15A PQFN56

Infineon Technologies
2,365 -

RFQ

IRFH7914TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 35A (Tc) - 8.7mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V - 1160 pF @ 15 V - - - Surface Mount
IRFH7921TR2PBF

IRFH7921TR2PBF

MOSFET N-CH 30V 15A/34A PQFN

Infineon Technologies
2,240 -

RFQ

IRFH7921TR2PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 34A (Tc) 4.5V, 10V 8.5mOhm @ 15A, 10V 2.35V @ 25µA 14 nC @ 4.5 V ±20V 1210 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH7932TR2PBF

IRFH7932TR2PBF

MOSFET N-CH 30V 24A PQFN56

Infineon Technologies
2,107 -

RFQ

IRFH7932TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 104A (Tc) - 3.3mOhm @ 25A, 10V 2.35V @ 100µA 51 nC @ 4.5 V - 4270 pF @ 15 V - 3.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH7936TR2PBF

IRFH7936TR2PBF

MOSFET N-CH 30V 20A PQFN56

Infineon Technologies
3,813 -

RFQ

IRFH7936TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 54A (Tc) - 4.8mOhm @ 20A, 10V 2.35V @ 50µA 26 nC @ 4.5 V - 2360 pF @ 15 V - - - Surface Mount
IRFR5505GTRPBF

IRFR5505GTRPBF

MOSFET P-CH 55V 18A DPAK

Infineon Technologies
2,745 -

RFQ

IRFR5505GTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 110mOhm @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 650 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS5615TRLPBF

IRFS5615TRLPBF

MOSFET N-CH 150V 33A D2PAK

Infineon Technologies
2,287 -

RFQ

IRFS5615TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPC100N04S52R8ATMA1

IPC100N04S52R8ATMA1

MOSFET N-CH 40V 100A 8TDSON-34

Infineon Technologies
2,840 -

RFQ

IPC100N04S52R8ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 7V, 10V 2.8mOhm @ 50A, 10V 3.4V @ 30µA 45 nC @ 10 V ±20V 2600 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ0902NSIATMA1

BSZ0902NSIATMA1

MOSFET N-CH 30V 21A/40A TSDSON

Infineon Technologies
3,927 -

RFQ

BSZ0902NSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 40A (Tc) 4.5V, 10V 2.8mOhm @ 30A, 10V 2V @ 250µA 24 nC @ 10 V ±20V 1500 pF @ 15 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH5302TRPBF

IRFH5302TRPBF

MOSFET N-CH 30V 32A/100A PQFN

Infineon Technologies
2,717 -

RFQ

IRFH5302TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 100A (Tc) 4.5V, 10V 2.1mOhm @ 50A, 10V 2.35V @ 100µA 76 nC @ 10 V ±20V 4400 pF @ 15 V - 3.6W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPZ40N04S58R4ATMA1

IPZ40N04S58R4ATMA1

MOSFET N-CH 40V 40A 8TSDSON-32

Infineon Technologies
2,130 -

RFQ

IPZ40N04S58R4ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 7V, 10V 8.4mOhm @ 20A, 10V 3.4V @ 10µA 13.7 nC @ 10 V ±20V 771 pF @ 25 V - 34W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD22N08S2L50ATMA1

IPD22N08S2L50ATMA1

MOSFET N-CH 75V 27A TO252-3

Infineon Technologies
2,434 -

RFQ

IPD22N08S2L50ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 27A (Tc) 5V, 10V 50mOhm @ 50A, 10V 2V @ 31µA 33 nC @ 10 V ±20V 630 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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